SKM75GAL063D [SEMIKRON]

Superfast NPT-IGBT Modules; 超快的NPT- IGBT模块
SKM75GAL063D
型号: SKM75GAL063D
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Superfast NPT-IGBT Modules
超快的NPT- IGBT模块

双极性晶体管
文件: 总4页 (文件大小:600K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SKM 75GB063D ...  
 8 19 :)ꢈ ꢌꢅꢇꢆꢍꢍ ꢉꢑꢃꢆꢒ ꢏꢍꢆ ꢍꢖꢆꢂꢏ%ꢏꢆ!  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Units  
(
;00  
/00 ꢓ=9ꢚ  
(
-
)'ꢎ  
)  
 8 19 ꢓ=9ꢚ :)  
 8 / ꢊꢍ  
)>?  
/90  
-
(
@ 10  
(
ꢘ'ꢎ  
,A ꢓꢕꢍꢑꢋ  
Bꢔ'>-ꢕꢗBꢁ C ꢍꢑꢋ  
-)ꢈ / ꢊꢏꢅ&  
 D0 &&& E ꢓ/19ꢚ /90  
:)  
(
1900  
(
ꢏꢍꢉꢇ  
Inverse diode  
TM  
*  
 8 19 ꢓF0ꢚ :)  
=9 ꢓ90ꢚ  
/90  
-
-
SEMITRANS  
2
*>?  
 8 / ꢊꢍ  
*ꢎ?  
 8 /0 ꢊꢍG ꢍꢏꢅ&G A 8 /90 :)  
DD0  
-
Superfast NPT-IGBT  
Modules  
Freewheeling diode  
*  
*>?  
 8 19 ꢓF0ꢚ :)  
/00 ꢓ=9ꢚ  
100  
-
-
 8 / ꢊꢍ  
SKM 75GB063D  
SKM 75GAR063D  
SKM 75GAL063D  
*ꢎ?  
 8 /0 ꢊꢍG ꢍꢏꢅG A 8 /90 :)  
=10  
-
 8 19 :)ꢈ ꢌꢅꢇꢆꢍꢍ ꢉꢑꢃꢆꢒ ꢏꢍꢆ ꢍꢖꢆꢂꢏ%ꢏꢆ!  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max. Units  
(
(ꢘ' 8 ()' ) 8 / ꢊ-  
Dꢈ9  
9ꢈ9  
;ꢈ9  
0ꢈH  
(
ꢊ-  
(
ꢘ'ꢓꢑꢃꢚ  
)'ꢎ  
(
(ꢘ' 8 0ꢈ ()' 8 ()'ꢎ A 8 19 ꢓ/19ꢚ :)  
0ꢈ/  
Features  
A 8 19 ꢓ/19ꢚ :)  
ꢘ' 8 /9 (ꢈ A 8 19 ꢓ/19ꢚ :)  
/ꢈ09 ꢓ/ꢚ  
/D ꢓ/Fꢈ=ꢚ  
)'ꢓꢕBꢚ  
 ꢂꢃꢄꢅꢅꢆꢇꢈ ꢃꢉꢊꢉꢋꢆꢅꢆꢉꢌꢍ  
ꢎꢏꢐꢍꢑꢒꢌꢂꢑꢌꢒꢆ ꢓꢁꢔꢕꢐꢁꢉꢅ  
ꢖꢌꢅꢂꢃꢐꢑꢃꢒꢉꢌꢋꢃ ꢗꢘꢙꢕꢚ  
)'  
(
(
ꢊI  
)ꢅꢉꢊ 8 =9 -ꢈ (ꢘ' 8 /9 (ꢈ ꢂꢃꢏꢖ ꢇꢆ,ꢆꢇ  
ꢌꢅ!ꢆꢒ %ꢉꢇꢇꢉ ꢏꢅꢋ ꢂꢉꢅ!ꢏꢑꢏꢉꢅꢍ  
1ꢈ/ ꢓ1ꢈDꢚ  
1ꢈ9 ꢓ1ꢈFꢚ  
(
)'ꢓꢍꢄꢑꢚ  
)
)
)
Dꢈ1  
0ꢈ9  
0ꢈH  
ꢅ*  
ꢅ*  
ꢅ*  
ꢅ"  
ꢏꢆꢍ  
ꢛꢉ  ꢑꢄꢏꢇ ꢂꢌꢒꢒꢆꢅꢑ  ꢏꢑꢃ ꢇꢉ  
ꢑꢆꢊꢖꢆꢒꢄꢑꢌꢒꢆ !ꢆꢖꢆꢅ!ꢆꢅꢂꢆ  
(ꢘ' 8 0ꢈ ()' 8 19 (ꢈ % 8 / ?"7  
ꢉꢆꢍ  
ꢒꢆꢍ  
"ꢏꢋꢃ ꢍꢃꢉꢒꢑ ꢂꢏꢒꢂꢌꢏꢑ ꢂꢄꢖꢄ#ꢏꢇꢏꢑ$ꢈ ꢍꢆꢇ%  
ꢇꢏꢊꢏꢑꢏꢅꢋ ꢏ% ꢑꢆꢒꢊ&  ꢏꢍ ꢂꢇꢄꢊꢖꢆ! ꢑꢉ '  
ꢔꢉꢍ& ꢑꢆꢊꢖ&ꢐꢂꢉꢆ%%& ꢉ% (  
)'  
>
H0  
ꢒꢆꢍ&ꢈ ꢑꢆꢒꢊꢏꢅꢄꢇꢐꢂꢃꢏꢖ 8 19 ꢓ/19ꢚ :)  
)) 8 H00 (ꢈ )ꢅꢉꢊ 8 =9 -  
ꢘꢉꢅ 8 >ꢘꢉ%% 8 /9 Iꢈ A 8 /19 :)  
ꢘ' 8 @ /9 (  
0ꢈ=9 ꢓ/ꢚ  
ꢊI  
))JE''J  
)'ꢍꢄꢑ  
!ꢓꢉꢅꢚ  
 
!ꢓꢉ%%ꢚ  
%  
(
;0  
90  
ꢅꢍ  
ꢅꢍ  
ꢅꢍ  
ꢅꢍ  
(ꢆꢒ$ ꢇꢉ  )  )  )  
>
ꢏꢆꢍ  
ꢉꢆꢍ  
ꢒꢆꢍ  
ꢛꢄꢑꢂꢃꢐꢌꢖ %ꢒꢆꢆ  
(
H90  
H9  
*ꢄꢍꢑ + ꢍꢉ%ꢑ ꢏꢅ,ꢆꢒꢍꢆ )-ꢛ !ꢏꢉ!ꢆꢍ  
ꢗꢍꢉꢇꢄꢑꢆ! ꢂꢉꢖꢖꢆꢒ #ꢄꢍꢆꢖꢇꢄꢑꢆ ꢌꢍꢏꢅꢋ  
.ꢙ) .ꢏꢒꢆꢂꢑ )ꢉꢖꢖꢆꢒ ꢙꢉꢅ!ꢏꢅꢋ  
ꢕꢆꢂꢃꢅꢉꢇꢉꢋ$  ꢏꢑꢃꢉꢌꢑ ꢃꢄꢒ! ꢊꢉꢌꢇ!  
ꢛꢄꢒꢋꢆ ꢂꢇꢆꢄꢒꢄꢅꢂꢆ ꢓ/0 ꢊꢊꢚ ꢄꢅ!  
ꢂꢒꢆꢆꢖꢄꢋꢆ !ꢏꢍꢑꢄꢅꢂꢆꢍ ꢓ10 ꢊꢊꢚ  
'ꢉꢅ ꢓ'ꢉ%%  
H ꢓ1ꢈ9ꢚ  
ꢊK  
Inverse diode  
(* 8 (')  
*ꢅꢉꢊ 8 =9 -G (ꢘ' 8 0 (G A 8 19 ꢓ/19ꢚ :)  
/ꢈ99 ꢓ/ꢈ99ꢚ  
/ꢈL  
0ꢈL  
(
(
(
A 8 /19 ꢓꢚ :)  
ꢓꢕBꢚ  
 
A 8 /19 ꢓꢚ :)  
/0  
H0  
/HꢈH  
ꢊI  
-
>>?  
Mꢒꢒ  
*ꢅꢉꢊ 8 =9 -G A 8 /19   :)  
!ꢏ3!ꢑ 8 F00 -3Nꢍ  
Typical Applications  
Hꢈ=  
N)  
ꢎ ꢏꢑꢂꢃꢏꢅꢋ ꢓꢅꢉꢑ %ꢉꢒ ꢇꢏꢅꢆꢄꢒ ꢌꢍꢆꢚ  
ꢎ ꢏꢑꢂꢃꢆ! ꢊꢉ!ꢆ ꢖꢉ ꢆꢒ ꢍꢌꢖꢖꢇꢏꢆꢍ  
2ꢔꢎ  
ꢕꢃꢒꢆꢆ ꢖꢃꢄꢍꢆ ꢏꢅ,ꢆꢒꢑꢆꢒꢍ %ꢉꢒ ꢍꢆꢒ,ꢉ 3  
-) ꢊꢉꢑꢉꢒ ꢍꢖꢆꢆ! ꢂꢉꢅꢑꢒꢉꢇ  
ꢔꢌꢇꢍꢆ %ꢒꢆ4ꢌꢆꢅꢂꢏꢆꢍ ꢄꢇꢍꢉ 5 /06"7  
'
(
ꢘ' 8 0 (  
ꢊK  
ꢒꢒ  
FWD  
(* 8 (')  
* 8 /00 -G (ꢘ' 8 0 (ꢈ A 8 19 ꢓ/19ꢚ :)  
A 8 /19 ꢓꢚ :)  
/ꢈ99 ꢓ/ꢈ99ꢚ  
/ꢈL  
0ꢈL  
/0  
(
(
(
ꢓꢕBꢚ  
 
A 8 /19 ꢓꢚ :)  
F
DD  
;
ꢊI  
-
>>?  
Mꢒꢒ  
* 8 /00 -G A 8 /19   :)  
!ꢏ3!ꢑ 8 0 -3Nꢍ  
N)  
'
(ꢘ' 8 (  
ꢊK  
ꢒꢒ  
Thermal characteristics  
>
>
>
ꢖꢆꢒ ꢗꢘꢙꢕ  
0ꢈH9  
/
O3P  
O3P  
O3P  
ꢑꢃꢓAꢐꢂꢚ  
ꢖꢆꢒ ꢗꢅ,ꢆꢒꢍꢆ .ꢏꢉ!ꢆ  
ꢖꢆꢒ *P.  
ꢑꢃꢓAꢐꢂꢚ.  
ꢑꢃꢓAꢐꢂꢚ*.  
0ꢈ;  
>
ꢖꢆꢒ ꢊꢉ!ꢌꢇꢆ  
0ꢈ09  
O3P  
ꢑꢃꢓꢂꢐꢍꢚ  
Mechanical data  
?
ꢑꢉ ꢃꢆꢄꢑꢍꢏꢅ6 ?;  
H
9
9
ꢁꢊ  
ꢁꢊ  
?
ꢑꢉ ꢑꢆꢒꢊꢏꢅꢄꢇꢍ ?9  
1ꢈ9  
GB  
GAL  
GAR  
 
/;0  
1
19-09-2005 RAA  
© by SEMIKRON  
SKM 75GB063D ...  
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 2 Rated current vs. temperature IC = f (TC)  
Fig. 4 Typ. turn-on /-off energy = f (RG)  
Fig. 6 Typ. gate charge characteristic  
Fig. 3 Typ. turn-on /-off energy = f (IC)  
Fig. 5 Typ. transfer characteristic  
2
19-09-2005 RAA  
© by SEMIKRON  
SKM 75GB063D ...  
Fig. 7 Typ. switching times vs. IC  
Fig. 8 Typ. switching times vs. gate resistor RG  
Fig. 9 Transient thermal impedance of IGBT  
Zthp(j-c) = f (tp); D = tp/tc = tp*f  
Fig. 10 Transient thermal impedance of FWD  
Zthp(j-c) = f (tp); D = tp/tc = tp*f  
Fig. 11 CAL diode forward characteristic  
Fig. 12 Typ. CAL diode peak reverse recovery current  
3
19-09-2005 RAA  
© by SEMIKRON  
SKM 75GB063D ...  
Fig. 13 Typ. CAL diode recovered charge  
UL Recognized  
Dimensions in mm  
File no. E 63 532  
ꢘꢙ  
)ꢄꢍꢆ . ;/  
)ꢄꢍꢆ . ;1 ꢓQ . ;/ꢚ  
)ꢄꢍꢆ . ;H ꢓQ . ;/ꢚ  
ꢘ-ꢛ  
ꢘ->  
)ꢄꢍꢆ . ;/  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.  
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee  
expressed or implied is made regarding delivery, performance or suitability.  
4
19-09-2005 RAA  
© by SEMIKRON  

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