SKM800GA126D [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SKM800GA126D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：607K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 800GA126D
ꢋ ꢏ ,* -ꢕ ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢗꢊꢈꢅ ꢈꢘꢅꢍꢊꢚꢊꢅ%
Absolute Maximum Ratings
Symbol Conditions
ꢍ
Values
Units
IGBT
ꢔꢕꢖꢉ
.,++
3!+ 0!,+2
.,++
ꢔ
$
#
#
ꢋꢍ ꢏ ,* 01+2 -ꢕ
ꢑꢘ ꢏ . ꢃꢈ
ꢕ
$
ꢕ45
ꢔ6ꢖꢉ
7 ,+
ꢔ
ꢋꢙ8 0ꢋꢈꢑꢄ
2
ꢋ9'ꢖ4$ꢋ#9: ) ꢋꢈꢑꢄ
$ꢕ . ꢃꢊꢆ=
; <+ === > .*+ 0.,*2
-ꢕ
ꢔꢊꢈꢂꢒ
<+++
ꢔ
Inverse diode
#
ꢋꢍ ꢏ ,* 0.,*2 -ꢕ
!1+ 0<@+2
.,++
$
$
SEMITRANS 4
?
#
ꢑꢘ ꢏ . ꢃꢈ
?45
#
ꢑꢘ ꢏ .+ ꢃꢈA ꢈꢊꢆ=A ꢋ8 ꢏ .*+ -ꢕ
B!++
$
?ꢉ5
Trench IGBT Modules
ꢋ ꢏ ,* -ꢕ ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢗꢊꢈꢅ ꢈꢘꢅꢍꢊꢚꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢍ
min.
typ.
max. Units
SKM 800GA126D
ꢔ6ꢖ0ꢑꢎ2
ꢔ6ꢖ ꢏ ꢔꢕꢖ #ꢕ ꢏ .! ꢃ$
*
* 1
+ ,
! *
+ !
ꢔ
ꢃ$
ꢔ
#
ꢔ6ꢖ ꢏ + ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ ꢋ8 ꢏ ,* 0.,*2 -ꢕ
ꢋ8 ꢏ ,* 0.,*2 -ꢕ
ꢕꢖꢉ
ꢔꢕꢖ0ꢋ92
ꢌꢕꢖ
. 0+ 32
. , 0. 12
. .*
. @
Preliminary Data
ꢔ6ꢖ ꢏ .* ꢔ ꢋ8 ꢏ ,* 0.,*2 -ꢕ
ꢃC
ꢔꢕꢖ0ꢈꢐꢑ2
#ꢕꢆꢂꢃ ꢏ !++ $ ꢔ6ꢖ ꢏ .* ꢔ ꢍꢎꢊꢘ ꢒꢅꢙꢅꢒ
. @ 0,2
, .*
ꢔ
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Eꢕꢖ
ꢇꢆ%ꢅꢌ ꢚꢂꢒꢒꢂꢗꢊꢆꢄ ꢍꢂꢆ%ꢊꢑꢊꢂꢆꢈ
<,
B B
B .
ꢆ?
ꢆ?
ꢆ?
ꢆꢁ
Features
ꢔ6ꢖ ꢏ + ꢔꢕꢖ ꢏ ,* ꢔ ꢚ ꢏ . 5ꢁD
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
,+
ꢔ
ꢗꢊꢑꢎ ꢘꢂꢈꢊꢑꢊꢙꢅ ꢑꢅꢃꢘꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢈꢐꢑ
4ꢕꢕF>ꢖꢖF
ꢌꢅꢈ= ꢑꢅꢌꢃꢊꢆꢐꢒ;ꢍꢎꢊꢘ ꢋꢍꢏ ,* 0.,*2 -ꢕ
+ .1 0+ ,,2
ꢃC
ꢍꢂꢅꢚꢚꢊꢍꢊꢅꢆꢑ
ꢑ%0ꢂꢆ2
ꢑꢌ
ꢑ%0ꢂꢚꢚ2
ꢑꢚ
ꢔꢕꢕ ꢏ !++ ꢔ #ꢕꢆꢂꢃ ꢏ !++ $
46ꢂꢆ ꢏ 46ꢂꢚꢚ ꢏ B C ꢋ8 ꢏ .,* -ꢕ
ꢔ6ꢖ ꢏ 7 .* ꢔ
,,+
.++
1!+
.B*
ꢆꢈ
ꢆꢈ
ꢆꢈ
ꢆꢈ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢘꢐꢛꢊꢒꢊꢑꢓ ꢈꢅꢒꢚ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ ! " #
ꢀ
ꢕ
Typical Applications
ꢖꢂꢆ 0ꢖꢂꢚꢚ
2
!* 03*2
ꢃG
$ꢕ ꢊꢆꢙꢅꢌꢑꢅꢌ %ꢌꢊꢙꢅꢈ
&'ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢗꢅꢒ%ꢅꢌꢈ
ꢀ
ꢀ
ꢀ
Inverse diode
ꢔ? ꢏ ꢔꢖꢕ
#?ꢆꢂꢃ ꢏ !++ $A ꢔ6ꢖ ꢏ + ꢔA ꢋ8 ꢏ ,* 0.,*2
. ! 0. !2
. 1 0. 12
ꢔ
-ꢕ
ꢔ0ꢋ92
ꢌꢋ
ꢋ8 ꢏ ,* 0.,*2 -ꢕ
ꢋ8 ꢏ ,* 0.,*2 -ꢕ
. 0+ 12
. 0. B2
*<+
. . 0+ 32
. . 0. *2
ꢔ
ꢃC
$
Remarks
#
) *++$ ꢒꢊꢃꢊꢑꢅ% ꢛꢓ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ
ꢀ
(ꢕ
#
#?ꢆꢂꢃ ꢏ !++ $A ꢋ8 ꢏ .,* 0 2 -ꢕ
445
Hꢌꢌ
ꢖꢌꢌ
%ꢊI%ꢑ ꢏ !+++ $IJꢈ
.,*
Jꢕ
ꢔ6ꢖ ꢏ + ꢔ
*3
ꢃG
Thermal characteristics
4ꢑꢎ08;ꢍ2
ꢘꢅꢌ #6Kꢋ
+ +<,
+ +3
LIM
LIM
4ꢑꢎ08;ꢍ2(
ꢘꢅꢌ #ꢆꢙꢅꢌꢈꢅ (ꢊꢂ%ꢅ
4ꢑꢎ0ꢍ;ꢈ2
ꢘꢅꢌ ꢃꢂ%ꢇꢒꢅ
+ +B1
LIM
Mechanical data
5ꢈ
ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆN 5!
B
*
*
:ꢃ
:ꢃ
5ꢑ
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 5! 5<
, *
ꢗ
BB+
ꢄ
GA
1
14-06-2005 SEN
© by SEMIKRON
SKM 800GA126D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
14-06-2005 SEN
© by SEMIKRON
SKM 800GA126D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of Inverse CAL Diode
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
14-06-2005 SEN
© by SEMIKRON
SKM 800GA126D
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
Dimensions in mm
File no. E 63 532
ꢕꢐꢈꢅ (*3
6$
ꢕꢐꢈꢅ ( *3
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
14-06-2005 SEN
© by SEMIKRON
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