SKT130/04D 概述
Line Thyristor 行晶闸管 可控硅整流器
SKT130/04D 规格参数
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-93 |
包装说明: | POST/STUD MOUNT, O-MUPM-H3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.30.00.80 |
风险等级: | 5.75 | Is Samacsys: | N |
外壳连接: | ANODE | 标称电路换相断开时间: | 120 µs |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 500 V/us |
最大直流栅极触发电流: | 200 mA | 最大直流栅极触发电压: | 3 V |
最大维持电流: | 250 mA | JEDEC-95代码: | TO-209 |
JESD-30 代码: | O-MUPM-H3 | JESD-609代码: | e2 |
最大漏电流: | 50 mA | 通态非重复峰值电流: | 3500 A |
元件数量: | 1 | 端子数量: | 3 |
最大通态电流: | 300000 A | 最高工作温度: | 130 °C |
最低工作温度: | -40 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大均方根通态电流: | 220 A | 断态重复峰值电压: | 400 V |
重复峰值反向电压: | 400 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 端子面层: | Tin/Silver (Sn/Ag) |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
SKT130/04D 数据手册
通过下载SKT130/04D数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载SKT 130 THYRISTOR BRIDGE,SCR,BRIDGE
-
-++ꢖꢚ -
ꢓꢑ+ꢖꢔ 2 ::0 ) #ꢄꢈꢙꢆꢄꢏꢄ ;ꢈꢉꢏꢂ %ꢐꢃ ꢇꢐꢎꢅꢆꢎꢏꢐꢏꢊ ꢐ*ꢂꢃꢈꢅꢆꢐꢎ&
+ꢔꢖ
+ꢖ
-
-
ꢓꢑ)- 2 ꢗ30 ) #ꢊꢆꢎ$ ꢗ<0= ꢑꢇ 2 <ꢛ >!&
ꢛ00
700
/00
ꢘ00
<00
ꢔ?ꢑ ꢗ3050/
ꢔ?ꢑ ꢗ3050ꢘ
ꢔ?ꢑ ꢗ3050<
ꢔ?ꢑ ꢗ305ꢗ:A
ꢔ?ꢑ ꢗ305ꢗ/A
@00
ꢗ300
ꢗꢛ00
ꢗ:00
ꢗ/00
ꢗ700
ꢗꢘ00
ꢔ?ꢑ ꢗ305ꢗꢘA
Symbol Conditions
Values
@7 #ꢗ30 &
@0 5 ꢗ:ꢛ
ꢗ/0 5:00
Units
ꢓꢑ)-
ꢊꢆꢎ$ ꢗ<0= ꢑꢇ 2 ꢗ00 #<ꢛ& >!=
)
)
)
Stud Thyristor
ꢓ
?ꢗꢚꢗ= ꢑꢈ 2 /ꢛ >!= B: 5 Bꢘ
?0ꢚꢛꢛ= ꢑꢈ 2 /ꢛ >!= B: 5 Bꢘ
Line Thyristor
ꢓ+ꢖꢔ
ꢓꢑꢔꢖ
?0ꢚꢛꢛ= ꢑꢈ 2 /ꢛ >!= 6ꢗ!
ꢗꢛꢛ
)
ꢑ;C 2 :ꢛ >!= ꢗ0 ꢄꢊ
3ꢛ00
3000
)
)
ꢑ;C 2 ꢗ30 >!= ꢗ0 ꢄꢊ
ꢑ;C 2 :ꢛ >!= <ꢚ3ꢛ $$$ ꢗ0 ꢄꢊ
ꢆDꢅ
ꢘꢗ000
)Dꢊ
SKT 130
ꢑ;C 2 ꢗ30 >!= <ꢚ3ꢛ $$$ ꢗ0 ꢄꢊ
/ꢛ000
)Dꢊ
-
ꢑ;C 2 :ꢛ >!= ꢓꢑ 2 ꢛ00 )
ꢑ;C 2 ꢗ30 >!
ꢄꢈꢙ$ :ꢚ:ꢛ
ꢄꢈꢙ$ ꢗꢚ:
ꢄꢈꢙ$ :ꢚ:
-
-
ꢑ
-
ꢑ#ꢑꢕ&
ꢃꢑ
ꢓ
ꢑ;C 2 ꢗ30 >!
ꢄ4
= ꢓ+
ꢑ;C 2 ꢗ30 >!= -+ 2 -++ꢖ= - 2 -
+ꢖ
ꢄꢈꢙ$ ꢛ0
ꢄ)
Fꢊ
ꢅꢍꢒ
ꢅꢍꢃ
ꢑ;C 2 :ꢛ >!= ꢓE 2 ꢗ )= ꢒꢆE5ꢒꢅ 2 ꢗ )5Fꢊ
2 0ꢚꢘ7 G -
ꢗ
:
Features
-
Fꢊ
+ꢖ
ꢁꢂꢃꢄꢂꢅꢆꢇ ꢄꢂꢅꢈꢉ ꢇꢈꢊꢂ ꢋꢆꢅꢌ ꢍꢉꢈꢊꢊ
ꢆꢎꢊꢏꢉꢈꢅꢐꢃ
ꢑꢌꢃꢂꢈꢒꢂꢒ ꢊꢅꢏꢒ ꢓꢔꢕ ꢖꢗꢘꢙꢗꢚꢛ
ꢓꢎꢅꢂꢃꢎꢈꢅꢆꢐꢎꢈꢉ ꢊꢅꢈꢎꢒꢈꢃꢒ ꢇꢈꢊꢂ
#ꢒꢆ5ꢒꢅ&ꢇꢃ
#ꢒ;5ꢒꢅ&ꢇꢃ
ꢅH
ꢑ;C 2 ꢗ30 >!
ꢄꢈꢙ$ ꢗ00
ꢄꢈꢙ$ ꢛ00 5 ꢗ000
ꢗ:0
)5Fꢊ
-5Fꢊ
Fꢊ
ꢀ
ꢑ;C 2 ꢗ30 >! = ꢔ?ꢑ $$$ 5 ꢔ?ꢑ $$$A
ꢑ;C 2 ꢗ30 >! ꢚ
ꢀ
ꢀ
ꢓꢁ
ꢑ;C 2 :ꢛ >!= ꢅ(*$ 5 ꢄꢈꢙ$
ꢗꢛ0 5 :ꢛ0
ꢄ)
ꢓI
ꢑ;C 2 :ꢛ >!= +E 2 33 4= ꢅ(*$ 5 ꢄꢈꢙ$
300 5 ꢘ00
ꢄ)
Typical Applications
-
ꢑ;C 2 :ꢛ >!= ꢒ$ꢇ$
ꢑ;C 2 :ꢛ >!= ꢒ$ꢇ$
ꢑ;C 2 ꢗ30 >!= ꢒ$ꢇ$
ꢄꢆꢎ$ 3
-
ꢄ)
-
Eꢑ
! ꢄꢐꢅꢐꢃ ꢇꢐꢎꢅꢃꢐꢉ
ꢓEꢑ
ꢄꢆꢎ$ :00
ꢄꢈꢙ$ 0ꢚ:ꢛ
ꢀ
#ꢂ$ ꢍ$ %ꢐꢃ ꢄꢈꢇꢌꢆꢎꢂ ꢅꢐꢐꢉꢊ&
-
E
!ꢐꢎꢅꢃꢐꢉꢉꢂꢒ ꢃꢂꢇꢅꢆ%ꢆꢂꢃꢊ
#ꢂ$ ꢍ$ %ꢐꢃ 'ꢈꢅꢅꢂꢃ( ꢇꢌꢈꢃꢍꢆꢎꢍ&
)! ꢇꢐꢎꢅꢃꢐꢉꢉꢂꢃꢊ
#ꢂ$ ꢍ$ %ꢐꢃ ꢅꢂꢄ*ꢂꢃꢈꢅꢏꢃꢂ ꢇꢐꢎꢅꢃꢐꢉ&
ꢓE
ꢑ;C 2 ꢗ30 >!= ꢒ$ꢇ$
ꢄꢈꢙ$ ꢗ0
ꢄ)
ꢀ
+
ꢇꢐꢎꢅ$
0ꢚꢗꢘ
0ꢚꢗ<
?56
?56
?56
?56
>!
ꢅꢌ#CJꢇ&
+
ꢊꢆꢎ$ ꢗ<0
ꢃꢂꢇ$ ꢗ:0
ꢀ
ꢅꢌ#CJꢇ&
+
0ꢚ:
ꢅꢌ#CJꢇ&
+
0ꢚ03
+ꢂꢇꢐꢄꢄꢂꢎꢒꢂꢒ ꢊꢎꢏ''ꢂꢃ ꢎꢂꢅꢋꢐꢃ,
ꢅꢌ#ꢇJꢊ&
ꢀ
ꢑ;C
J /0 $$$ K ꢗ30
ꢂ$ ꢍ$ %ꢐꢃ -
. /00 -1
-+ꢖꢔ
ꢑꢊꢅꢍ
J ꢛꢛ $$$ K ꢗꢛ0
>!
+ 2 33 45ꢗ3 6ꢚ ! 2 0ꢚ/7 89
-
J
-L
Mꢄ
ꢄ5ꢊD
ꢆꢊꢐꢉ
ꢖꢊ
ꢈ
ꢅꢐ ꢌꢂꢈꢅꢊꢆꢎ,
ꢈ**ꢃꢐꢙ$
30
ꢛ G @ꢚ<ꢗ
ꢄ
:ꢛ0
B ꢘ
ꢍ
!ꢈꢊꢂ
SKT
1
27-08-2003 IMP
© by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 1L Power dissipation vs. on-state current
Fig. 2 Rated on-state current vs. case temperature
Fig. 4 Transient thermal impedance vs. time
Fig. 1R Power dissipation vs. ambient temperature
Fig. 3 Recovered charge vs. current decrease
Fig. 5 Thermal resistance vs. conduction angle
2
27-08-2003 IMP
© by SEMIKRON
SKT 130 THYRISTOR BRIDGE,SCR,BRIDGE
Fig. 6 On-state characteristics
Fig. 7 Power dissipation vs. on-state current
Fig. 8 Surge overload curent vs. time
3
27-08-2003 IMP
© by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 9 Gate trigger characteristics
Dimensions in mm
!ꢈꢊꢂ B ꢘ #ꢓA! ꢘ0ꢗ@ꢗJ:1 )/7ꢖ!= NA A!1 ꢑꢕJ:0@ #ꢑꢕJ@3&&
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
27-08-2003 IMP
© by SEMIKRON
SKT130/04D 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
SKT130/06C | SEMIKRON | Silicon Controlled Rectifier, 204.1A I(T)RMS, 130000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209, | 获取价格 | |
SKT130/06CUNF | SEMIKRON | Silicon Controlled Rectifier, 220A I(T)RMS, 130000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209 | 获取价格 | |
SKT130/06D | SEMIKRON | Line Thyristor | 获取价格 | |
SKT130/08D | SEMIKRON | Line Thyristor | 获取价格 | |
SKT130/12C | SEMIKRON | Silicon Controlled Rectifier, 204.1A I(T)RMS, 130000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209 | 获取价格 | |
SKT130/12E | SEMIKRON | Line Thyristor | 获取价格 | |
SKT130/14E | SEMIKRON | Line Thyristor | 获取价格 | |
SKT130/16C | SEMIKRON | Silicon Controlled Rectifier, 130000mA I(T), 1600V V(DRM), | 获取价格 | |
SKT130/16E | SEMIKRON | Line Thyristor | 获取价格 | |
SKT131AEL01 | TE | Key Switches, Medium Security | 获取价格 |
SKT130/04D 相关文章
- 2024-09-20
- 6
- 2024-09-20
- 9
- 2024-09-20
- 8
- 2024-09-20
- 6