SKYPER42R [SEMIKRON]
IGBT Driver Core; IGBT驱动器的核心型号: | SKYPER42R |
厂家: | SEMIKRON INTERNATIONAL |
描述: | IGBT Driver Core |
文件: | 总18页 (文件大小:618K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SKYPER 42 R
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Vs
Supply voltage primary
Input signal voltage (HIGH)
Input signal voltage (LOW)
Output peak current
16
Vs + 0.3
GND - 0.3
30
V
V
ViH
ViL
V
IoutPEAK
A
IoutAVmax Output average current
150
mA
kHz
fmax
Max. switching frequency
100
SKYPER®
Collector emitter voltage sense across
the IGBT
VCE
1700
100
V
Rate of rise and fall of voltage
secondary to primary side
dv/dt
kV/µs
IGBT Driver Core
Isolation test voltage input - output (AC,
rms, 2s)
Visol IO
VisolPD
Visol12
4000
1500
1500
V
V
V
Partial discharge extinction voltage,
rms, QPD b 10pC
SKYPER 42 R
Preliminary Data
Isolation test voltage output 1 - output 2
(AC, rms, 2s)
Features
Minimum rating for external RGon
Minimum rating for external RGoff
Max. rating for output charge per pulse
Operating temperature
RGon min
RGoff min
Qout/pulse
Top
0.8
0.8
!
!
• Two output channels
• Integrated potential free power supply
• Under voltage protection
• Drive interlock top / bottom
• Dynamic short cirucit protection
• Shut down input
50
µC
°C
°C
-40 ... 85
-40 ... 85
Tstg
Storage temperature
• Failure management
Characteristics
• IEC 60068-1 (climate) 40/085/56, no
condensation and no dripping water
permitted, non-corrosive, climate class
3K3 acc. EN60721
Symbol Conditions
min.
typ.
max.
15.6
800
Unit
Vs
Supply voltage primary side
14.4
15
V
mA
mA
V
ISO
Supply current primary (no load)
Supply current primary side (max.)
Input signal voltage on / off
125
Typical Applications*
• Driver for IGBT modules in bridge
circuits in industrial application
• DC bus voltage up to 1200V
Vi
15 / 0
VIT+
VIT-
Input treshold voltage HIGH
Input threshold voltage (LOW)
12.3
V
4.6
V
Footnotes
Input resistance (switching/HALT
signal)
RIN
10
k!
Isolation test voltage with external high
voltage diode
VG(on)
VG(off)
fASIC
Turn on output voltage
15
-8
8
V
V
The isolation test is not performed as a
series test at SEMIKRON
Turn off output voltage
Asic system switching frequency
Input-output turn-on propagation time
Input-output turn-off propagation time
Error input-output propagation time
MHz
µs
The driver power can be expanded to 50µC
with external boost capacitors
td(on)IO
td(off)IO
td(err)
1.1
1.1
2.3
9
µs
Isolation coordination in compliance with
EN50178 PD2
µs
tpERRRESET Error reset time
µs
Operating temperature is real ambient
temperature around the driver core
Degree of protection: IP00
tTD
Top-Bot interlock dead time
2
µs
Cps
w
Coupling capacitance prim sec
weight
3
pF
g
MTBF
2.1
106h
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1,
Chapter IX
* The specifications of our components may not be considered as an assurance of component
characteristics. Components have to be tested for the respective application. Adjustments may
be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly
recommend prior consultation of our staff.
Driver Core
© by SEMIKRON
Rev. 5 – 05.04.2011
1
SKYPER® 42 R
Technical Explanations
Revision
Status:
Prepared by:
05
preliminary
Johannes Krapp
This Technical Explanation is valid for the following parts:
Related Documents:
title:
part number:
date code (YYWW):
L5054301
>CW16
Data Sheet SKYPER 42 R
SKYPER® 42 R
Content
1.
Introduction.............................................................................................................................................. 2
2.
Application and Handling Instructions.................................................................................................. 3
General Instructions................................................................................................................................... 3
Mechanical Instructions ............................................................................................................................. 3
2.1.
2.2.
3.
Driver Interface ........................................................................................................................................ 5
Controller Interface – Primary Side Pinning .............................................................................................. 5
Controller Interface – Primary Side Connection ........................................................................................ 6
Module interface – Secondary Side........................................................................................................... 7
Module interface – Secondary Side Connection ....................................................................................... 8
Power supply - Primary.............................................................................................................................. 9
Gate driver signals – Primary .................................................................................................................... 9
Shut Down Input (SDI) - Primary............................................................................................................. 10
Gate resistors - Secondary...................................................................................................................... 10
External Boost Capacitors (BC) -Secondary........................................................................................... 11
3.1.
3.2.
3.3.
3.4.
3.5.
3.6.
3.7.
3.8.
3.9.
4.
Protection features................................................................................................................................ 11
Failure Management................................................................................................................................ 11
Under Voltage Protection of driver power supply (UVP) ......................................................................... 12
Short Pulse Suppression (SPS) .............................................................................................................. 12
Dead Time generation (Interlock TOP / BOT) (DT)................................................................................. 12
Dynamic Short Circuit Protection by VCEsat monitoring (DSCP) ........................................................... 13
4.1.
4.2.
4.3.
4.4.
4.5.
5.
Electrical Characteristic........................................................................................................................ 15
Driver Performance.................................................................................................................................. 15
Insulation ................................................................................................................................................. 15
5.1.
5.2.
6.
7.
Environmental Conditions.................................................................................................................... 16
Marking................................................................................................................................................... 17
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
Please note:
Unless otherwise specified, all values in this technical explanation are typical values. Typical values are the average values expected in
large quantities and are provided for information purposes only. These values can and do vary in different applications. All operating
parameters should be validated by user’s technical experts for each application.
1. Introduction
The SKYPER 42 core constitutes an interface between IGBT modules and the controller. This core is a half
bridge driver. Basic functions for driving, potential separation and protection are integrated in the driver. Thus it
can be used to build up a driver solution for IGBT modules. SKYPER 42 R is developed for systems in the
power range of 1 MVA – 8 MVA.
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Two output channels
SKYPER 42 R
Up to 50 µC gate charge
Integrated potential free power supply for the secondary side
Short Pulse Suppression (SPS)
Under Voltage Protection (UVP)
Drive interlock (dead time) top / bottom (DT)
Dynamic Short Circuit Protection (DSCP) by VCE monitoring and
direct switch off
ꢀ
ꢀ
ꢀ
ꢀ
Shut Down Input (SDI)
Failure Management
Expandable by External Boost Capacitors (BC)
DC bus voltage up to 1200V
Block diagram of SKYPER 42 R
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
2. Application and Handling Instructions
2.1. General Instructions
ꢀ
Please provide for static discharge protection during handling. As long as the driver is not completely
assembled, the input terminals have to be short-circuited. Persons working with devices have to wear a
grounded bracelet. Any synthetic floor coverings must not be statically chargeable. Even during
transportation the input terminals have to be short-circuited using, for example, conductive rubber.
Worktables have to be grounded. The same safety requirements apply to MOSFET- and IGBT-modules.
ꢀ
When first operating a newly developed circuit, SEMIKRON recommends to apply low collector voltage and
load current in the beginning and to increase these values gradually, observing the turn-off behaviour of the
free-wheeling diode and the turn-off voltage spikes generated across the IGBT. An oscillographic control will
be necessary. Additionally, the case temperature of the module has to be monitored. When the circuit works
correctly under rated operation conditions, short-circuit testing may be done, starting again with low collector
voltage.
2.2. Mechanical Instructions
Dimensions – 69 x 80 x 19 + Holes – bottom view
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
ꢀ
For integrating the SKYPER 42 R driver core in to an inverter system an adaptor board has to be built.
SEMIKRON offers a wide range of adaptor boards, e.g. for SEMiX, Semitrans or SKiM modules.
SEMIKRON offers in addition a customer specific adaptor board on demand. Please contact your
responsible sales for further information.
Adaptor boards for SKYPER 42 R
ꢀ
SKYPER 42 R can be plugged or soldered on the adaptor board.
Soldering Hints
ꢀ
ꢀ
ꢀ
The temperature of the solder must not exceed 260°C, and solder time must not exceed 10 seconds.
The ambient temperature must not exceed the specified maximum storage temperature of the driver.
The solder joints should be in accordance to IPC A 610 Revision D (or later) - Class 3 (Acceptability of Electronic Assemblies) to
ensure an optimal connection between driver core and printed circuit board.
ꢀ
The driver is not suited for hot air reflow or infrared reflow processes.
Use of Support Posts
The connection between driver core and printed circuit
board should be mechanical reinforced by using support
posts.
The driver board has got three holes for supports posts.
Using support posts with external screw thread improves
mechanical assembly.
Product information of suitable support posts and
distributor contact information is available at e.g.
http://www.richco-inc.com or http://www.ettinger.de.
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
3. Driver Interface
3.1.
Controller Interface – Primary Side Pinning
Connectors
Connector X10, X11 (RM2,54, 10pin)
0,25mm unless otherwise noted
PIN
Signal
Function
Specification
X10:01
Reserved
X10:02
X10:03
Reserved
LOW = NO ERROR; open
collector output; max. 30V / 15mA
(external pull up resistor
necessary)
PRIM_nERROR_OUT ERROR output
5V logic; LOW active;
High Max = 3,8V;
Low Min = 1,5V;
X10:04
PRIM_nERROR_IN
ERROR input
X10:05
X10:06
PRIM_PWR_GND
PRIM_PWR_GND
GND for power supply and GND for digital signals
GND for power supply and GND for digital signals
Digital 15 V; 10 kOhm impedance;
LOW = TOP switch off;
HIGH = TOP switch on
X10:07
X10:08
PRIM_TOP_IN
PRIM_BOT_IN
Switching signal input (TOP switch)
Digital 15 V; 10 kOhm impedance;
LOW = BOT switch off;
HIGH = BOT switch on
Switching signal input (BOTTOM switch)
Stabilised +15V 4%
Stabilised +15V 4%
X10:09
X10:10
PRIM_PWR_15P
PRIM_PWR_15P
Reserved
Drive core power supply
Drive core power supply
X11:01,
02, 05-08
X11:03,
PRIM_PWR_GND
GND for power supply and GND for digital signals
04,09,10
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
3.2.
Controller Interface – Primary Side Connection
Application example
Pins X10:01-02 and X11:01-02; X11:05-08 are reserved. Do not connect. Non binding recommendation for: RERROR=4,75kꢀ; CFILTER=1nF.
ꢀ A capacitor is connected to the input of the gate driver to obtain high noise immunity. With current limited line
drivers, this capacitor can cause a small delay of a few ns. The capacitors have to be placed as close to the
gate driver interface as possible.
ꢀ Signal cable should be placed as far away as possible from power terminals, power cables, ground cables,
DC-link capacitors and all other noise sources.
ꢀ Control signal cable should not run parallel to power cable. The minimum distance between control signal
cable and power cable should be 30cm and the cables should cross vertically only.
ꢀ It is recommended that all cables be kept close to ground (e.g. heat sink or the likes).
ꢀ In noise intensive applications, it is recommended that shielded cables or fibre optic interfaces be used to
improve noise immunity.
ꢀ Use a low value capacitor (1nF) between signal and power supply ground of the gate driver for differential-
mode noise suppression.
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
3.3.
Module interface – Secondary Side
Connectors
Connector X100 / X200 (RM2,54, 10pin)
0,25mm unless otherwise noted
PIN
Signal
Function
Specification
X100:01
SEC_TOP_VCE_CFG
Input reference voltage adjustment for Vce monitoring TOP
X100:02
X100:03
X100:04
X100:05
X100:06
X100:07
X100:08
X100:09
X100:10
X200:01
X200:02
X200:03
X200:04
X200:05
X200:06
X200:07
X200:08
X200:09
X200:10
SEC_TOP_VCE_IN
SEC_TOP_15P
Input VCE monitoring TOP
Output power supply for external buffer capacitors
Output power supply for external buffer capacitors
GND for power supply and GND for digital signals
Switch on signal TOP IGBT
Stabilised +15V
Stabilised +15V
SEC_TOP_15P
SEC_TOP_GND
SEC_TOP_IGBT_ON
SEC_TOP_GND
GND for power supply and GND for digital signals
SEC_TOP_IGBT_OFF Switch off signal TOP IGBT
SEC_TOP_8N
Output power supply for external buffer capacitors
Stabilised -7V
Stabilised -7V
SEC_TOP_8N
Output power supply for external buffer capacitors
Input reference voltage adjustment for Vce monitoring BOT
Input VCE monitoring BOT
SEC_BOT_VCE_CFG
SEC_BOT_VCE_IN
SEC_BOT_15P
Output power supply for external buffer capacitors
Output power supply for external buffer capacitors
GND for power supply and GND for digital signals
Switch on signal BOT IGBT
Stabilised +15V
Stabilised +15V
SEC_BOT_15P
SEC_BOT_GND
SEC_BOT_IGBT_ON
SEC_BOT_GND
GND for power supply and GND for digital signals
SEC_BOT_IGBT_OFF Switch off signal BOT IGBT
SEC_BOT_8N
SEC_BOT_8N
Output power supply for external buffer capacitors
Stabilised -7V
Stabilised -7V
Output power supply for external buffer capacitors
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
3.4.
Module interface – Secondary Side Connection
Application example
SKYPERꢁ42ꢁR
USERꢁINTERFACE
X100:01ꢁReferenceꢁforꢁVCE
X100:02ꢁInputꢁVCE
ErrorꢁProcessingꢁTOP
X100:03;04ꢁPSꢁforꢁBC,+15V
ꢂ VCEꢁmonitoring
18,2k
337pF
RGON
X100:05ꢁGND
X
1
0
0
X100:08ꢁSwitchꢁon
X100:07ꢁGND
PowerꢁDriver
TOP
RGOFF
X100:09ꢁSwitchꢁoff
10k
Power
Supply
TOP
16ꢃF
16ꢃF
X100:09;10ꢁPSꢁforꢁBC,ꢂ7V
Power
Supply
BOT
X200:01ꢁReferenceꢁforꢁVCE
X200:02ꢁInputꢁVCE
X200:03;04ꢁPSꢁforꢁBC,+15V
18,2k
337pF
RGON
X
2
0
0
X200:05ꢁGND
PowerꢁDriver
BOT
X200:08ꢁSwitchꢁon
X200:07ꢁGND
RGOFF
X200:09ꢁSwitchꢁoff
10k
ErrorꢁProcessingꢁBOT
16ꢃF
ꢂ VCEꢁmonitoring
16ꢃF
X200:09;10ꢁPSꢁforꢁBC,ꢂ7V
Application example for 1200V IGBT, VCEref=6,7V, tBL=2,3µs, Qout/pulse = 4µC.
ꢀ Any parasitic inductances within the DC-link have to be minimized. Overvoltages may be absorbed by C- or
RCD-snubbers between main terminals (plus and minus) of the power module.
ꢀ Make power patterns short and thick to reduce stray inductance and stray resistance.
ꢀ The connecting leads between gate driver and IGBT module must be kept as short as possible (max. 20cm).
ꢀ Gate wiring for top and bottom IGBT or other phases must not be bundled together.
ꢀ It is recommended that a 10kꢀ resistor (RGE) be placed between the gate and emitter. If wire connection is
used, do not place the RGE between printed circuit board and IGBT module. RGE has to be placed very close
to the IGBT module.
ꢀ Use a suppressor diode (back-to-back Zener diode) between gate and emitter. The diode has to be placed
very close to the IGBT module.
ꢀ The use of a capacitor (CGE) between gate and emitter can be advantageous, even for high-power IGBT
modules and parallel operation. The CGE should be approximately 10% of the CGE of the IGBT used. The
CGE has to be placed very close to the IGBT module.
ꢀ Current loops must be avoided.
ꢀ External boost capacitors must be placed as close to the gate driver as possible in order to minimize parasitic
inductance.
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
3.5.
Power supply - Primary
Requirements of the auxiliary power supply
Regulated power supply
Please note:
+15V 4%
150ms
Do not apply switching
signals during power on
reset.
Maximum rise time of auxiliary power supply
Power on reset completed after
56ms
ꢀ
ꢀ
The same power supply used for SKYPER 32 can be taken
The supplying switched mode power supply may not be turned-off for a short time as consequence of
its current limitation. Its output characteristic needs to be considered. Switched mode power supplies
with fold-back characteristic or hiccup-mode can create problems if no sufficient over current margin is
available. The voltage has to rise continuously.
ꢀ
If the power supply is able to provide a higher current, a peak current will flow in the first instant to
charge up the input capacitances on the driver. Its peak current value will be limited by the power
supply and the effective impedances (e.g. distribution lines), only.
ꢀ
ꢀ
The driver error signal PRIM_nERROR_OUT is operational after 56ms. Without any error present, the
error signal will be reset.
To assure a high level of system safety the TOP and BOT signal inputs should stay in a defined state
(OFF state, LOW) during driver turn-on time. Only after the end of the power-on-reset, IGBT switching
operation shall be permitted.
3.6.
Gate driver signals – Primary
The signal transfer to each IGBT is made with pulse transformers, used for switching on and switching off of the
IGBT. The inputs have a Schmitt Trigger characteristic and a positive / active high logic (input HIGH = IGBT on;
input LOW = IGBT off).
It is mandatory to use circuits which switch active to +15V and 0V. Pull up and open collector output stages
must not be used for TOP / BOT control signals. It is recommended choosing the line drivers according to the
demanded length of the signal lines. The duty cycle of the driver can be adjusted between 0 – 100%. It is not
permitted to apply switching pulses shorter than 1µs.
TOP / BOT Input
A capacitor is connected to the input
to obtain high noise immunity. This
capacitor can cause for current
limited line drivers a little delay of few
ns, which can be neglected. The
capacitors have to be placed as
close as possible to the driver
interface.
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
3.7.
Shut Down Input (SDI) - Primary
The shut down input / error input signal can gather error signals of other hardware components for switching off
the IGBT (input HIGH = no turn-off; input LOW = turn-off).
Connection SDI
Hints
ꢀ A LOW signal at PRIM_nERROR_IN will set the error latch and
force the output PRIM_nERROR_OUT into HIGH state.
Switching pulses from the controller will be ignored.
ꢀ The SDI function can be disabled by no connection or
connecting to 5V.
3.8.
Gate resistors - Secondary
The output transistors of the driver are MOSFETs. The sources of the MOSFETs are separately connected to
external terminals in order to provide setting of the turn-on and turn-off speed of each IGBT by the external
resistors RGon and RGoff. As an IGBT has input capacitance (varying during switching time) which must be
charged and discharged, both resistors will dictate what time must be taken to do this. The final value of the
resistance is difficult to predict, because it depends on many parameters as DC link voltage, stray inductance of
the circuit, switching frequency and type of IGBT.
Connection RGon, RGoff
Application Hints
ꢀ The gate resistor influences the switching time, switching losses,
dv/dt behaviour, etc. and has to be selected very carefully. The
gate resistor has to be optimized according to the specific
application.
ꢀ By increasing RGon the turn-on speed will decrease. The reverse
peak current of the free-wheeling diode will diminish.
ꢀ By increasing RGoff the turn-off speed of the IGBT will decrease.
The inductive peak over voltage during turn-off will diminish.
ꢀ In order to ensure locking of the IGBT even when the driver
supply voltage is turned off, a resistance (RGE) has to be
integrated.
ꢀ Tpically, IGBT modules with a large current rating will be driven
with smaller gate resistors and vice versa.
ꢀ Te value of gate resistors will be between the value indicated in
the IGBT data sheet and roughly twice this value.
ꢀ In most applications, the turn-on gate resistor RG(on) is
ꢀ smaller than the turn-off gate resistor RG(off).
ꢀ Depending on the individual parameters, RG(off) can be roughly
twice the RG(on) value.
ꢀ
Place the gate resistances for turn-on and turn-off close
together.
Please note:
Do not connect the terminals SEC_TOP_IGBT_ON with SEC_TOP_IGBT_OFF and SEC_BOT_IGBT_ON
with SEC_BOT_IGBT_OFF, respectively.
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
3.9.
External Boost Capacitors (BC) -Secondary
The rated gate charge of the driver may be increased by additional boost capacitors to drive IGBT with large
gate capacitance.
Connection External Boost Capacitors
Dimensioning of Cboost
ꢀ SKYPER 42 R has internal gate capacitors of 2.5 µC
ꢀ Using external capacitors:
4µF = 1µC
ꢀ The boost capacitors on C15 and C-8 should be chosen with the
same values
ꢀ Please consider the maximum rating four output charge per
pulse of the gate driver.
ꢀ The external boost capacitors should be connected as close as
possible to the gate driver and to have low inductance.
4. Protection features
4.1.
Failure Management
Any error detected will set the error latch and force the output PRIM_nERROR_OUT into HIGH state. Switching
pulses from the controller will be ignored. Connected and switched off IGBTs remain turned off. The switched
off IGBTs remain turned off.
The output PRIM_nERROR_OUT is an open collector output. For the error evaluation an external pull-up-
resistor is necessary pulled-up to the positive operation voltage of the control logic (LOW signal = no error
present, wire break safety is assured).
Open collector error transistor
Application hints
ꢀ An external resistor to the controller logic high level is required.
The resistor has to be in the range of V / Imax < Rpull_up < 10kꢀ.
ꢀ Rest when TOP/BOT signals set to low for tpERRRESET > 9µs
ꢀ PRIM_nERROR_OUT can operate to maximum 30V and can
switch a maximum of 15mA.
ꢀ Example:
For V = +15V the needed resistor should be in the range
Rpull_up = (15V/15mA) … 10kꢀ ⇒ 1kꢀ… 10kꢀ.
Please note:
The error output PRIM_ERROR_OUT is not short circuit proof.
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
4.2.
Under Voltage Protection of driver power supply (UVP)
The internally detected supply voltage of the driver has an under voltage protection.
Supply voltage
UVP level
Regulated +15V 4%
Typ 13,5V
If the internally detected supply voltage of the driver falls below this level, the IGBTs will be switched off (IGBT
driving signals set to LOW). The input side switching signals of the driver will be ignored. The error memory will
be set, and the output PRIM_nERROR_OUT changes to the HIGH state.
4.3.
Short Pulse Suppression (SPS)
This circuit suppresses short turn-on and off-pulses of incoming signals. This way the IGBTs are protected
against spurious noise as they can occur due to bursts on the signal lines. Pulses shorter than 625ns are
suppressed and all pulses longer than 750ns get through for 100% probability. Pulses with a length in-between
625ns and 750ns can be either suppressed or get through.
Pulse pattern – SPS
short pulses
PRIM_TOP/BOT_INꢁ(HIGH)
PRIM_TOP/BOT_INꢁ(LOW)
SEC_TOP/BOT_IGBT_ON
SEC_TOP/BOT_IGBT_OFF
4.4.
Dead Time generation (Interlock TOP / BOT) (DT)
The DT circuit prevents, that TOP and BOT IGBT of one half bridge are switched on at the same time (shoot
through). The dead time is not added to a dead time given by the controller. Thus the total dead time is the
maximum of "built in dead time" and "controller dead time". It is possible to control the driver with one switching
signal and its inverted signal.
Please note:
The generated dead time is fixed at 2 µs and cannot be changed. Please contact your resonsible sales engineer for customization.
Pulse pattern – DT
ꢀ
The total propagation delay of the driver is the sum of
interlock dead time (tTD) and driver input output signal
propagation delay (td(on;off)IO) as shown in the pulse pattern.
Moreover the switching time of the IGBT chip has to be taken
into account (not shown in the pulse pattern).
ꢀ
ꢀ
In case both channel inputs (PRIM_TOP_IN and
PRIM_BOT_IN) are at high level, the IGBTs will be turned off.
If only one channel is switching, there will be no interlock
dead time.
Please note:
No error message will be generated when overlap of switching signals occurs.
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2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
4.5.
Dynamic Short Circuit Protection by VCEsat monitoring (DSCP)
The DSCP monitors the collector-emitter voltage VCE of the IGBT during its on-state.
The reference voltage VCEref may dynamically be adapted to the IGBTs switching behaviour. Immediately after
turn-on of the IGBT, a higher value is effective than in steady state. VCEstat is the steady-state value of VCEref and
is adjusted to the required maximum value for each IGBT by an external resistor RCE. It may not exceed 10V.
The time constant for the delay (exponential shape) of VCEref may be controlled by an external capacitor CCE. It
controls the blanking time tbl which passes after turn-on of the IGBT before the VCEsat monitoring is activated.
Reference Voltage (VCEref) Characteristic
After tbl has passed, the VCE monitoring will be triggered as soon as VCE > VCEref and will turn off the IGBT. The
error memory will be set, and the output PRIM_nERROR_OUT changes to the HIGH state. Possible failure
modes are shows in the following pictures.
Short circuit during operation
Turn on of IGBT too slow *
Short circuit during turn on
* or adjusted blanking time too short
13
2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
Dimensioning of RCE and CCE
R
Conf
10⋅kΩ + R
U
R
:= 10.5⋅V⋅
(
Detect.1200V.Typ Conf
)
)
Conf
5.62
10.5⋅V
V :=
⋅10.5⋅V
V :=
1
2
6.62
5.62
V = 8.914V
V = 1.868V
1
2
R
Conf
U
R
:= V ⋅
− V
(
Detect.1700V.Typ Conf
1
2
10⋅kΩ + R
Conf
t
t
t
:= t
t := 5.62⋅kΩ⋅33⋅pF
D
D
Durchlauf.Komparator
1
1
− 9
− 9
t
= 185.46× 10
s
1
= 440× 10
s
R
⋅10⋅kΩ
15V − U
R
(
Detect.1200V.Typ Conf
)
Conf
R
, C
:=
:=
⋅C
+ t ⋅ln
+ t
+ t
(
Ausblend.1200VTyp Conf Conf
)
)
Conf
Conf
1
D
D
10.5⋅V − U
R
R
+ 10⋅kΩ
(
Detect.1200V.Typ Conf
)
)
Conf
R
⋅10⋅kΩ
15V − U
R
(
Detect.1700V.Typ Conf
)
Conf
t
R
, C
⋅C
+ t ⋅ln
(
Ausblend.1700VTyp Conf Conf
1
10.5⋅V − U
R
R
+ 10⋅kΩ
(
Detect.1700V.Typ Conf
Conf
(
)
18.2⋅kΩ = 6.777V
U
t
Detect.1200V.Typ
− 6
(
)
18.2⋅kΩ, 337⋅pF = 2.31× 10
s
Ausblend.1200VTyp
If the DSCP function is not used, for example during the experimental phase, SEC_TOP_VCE_IN must be connected with
SEC_TOP_GND for disabling SCP @ TOP side and SEC_BOT_VCE_IN must be connected with SEC_BOT_GND for disabling SCP @
BOT side.
The high voltage during IGBT off state is blocked by a high voltage diode.
Connection High Voltage Diode
Characteristics
ꢀ
ꢀ
ꢀ
Reverse blocking voltage of the diode shall be higher than the
used IGBT.
Reverse recovery time of the fast diode shall be lower than VCE
rising of the used IGBT.
Forward voltage of the diode: 1,5V @ 2mA forward current
(Tj=25°C).
A collector series resistance RVCE (1kΩ / 0,4W) must be
connected for 1700V IGBT operation.
14
2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
5. Electrical Characteristic
5.1. Driver Performance
The driver is designed for application with half bridges or single modules and a maximum gate charge per pulse
< 100C (2,5µC on the driver). The charge necessary to switch the IGBT is mainly depending on the IGBT’s chip
size, the DC-link voltage and the gate voltage. This correlation is shown in module datasheets. It should,
however, be considered that the driver is turned on at +15V and turned off at -8V. Therefore, the gate voltage
will change by 22V during each switching procedure. The medium output current of the driver is determined by
the switching frequency and the gate charge.
Calculation Switching Frequency
Maximum Switching Frequency @ different Gate Charges @ Tamb=25°C
100 kHz
IoutAVmax
fmax
=
80 kHz
60 kHz
40 kHz
20 kHz
0 kHz
QGE
fmax
IoutAVmax
QGE
:
Maximum switching frequency *
Maximum output average current
Gate charge of the driven IGBT
:
:
* @ Tamb=25°C
1 µC
10 µC
gate charge
100 µC
5.2. Insulation
Magnetic transformers are used for insulation between gate driver primary and secondary side. The transformer
set consists of pulse transformers which are used bidirectional for turn-on and turn-off signals of the IGBT and
the error feedback between secondary and primary side, and a DC/DC converter. This converter provides a
potential separation (galvanic separation) and power supply for the two secondary (TOP and BOT) sides of the
driver. Thus, external transformers for external power supply are not required.
Creepage and Clearance Distance
mm
12,2
8
Creepage Distance Primary to Secondary (Reinforced according to EN50178)
Clearance Distance Primary to Secondary (Reinforced according to EN50178)
Creepage Distance Secondary to Secondary (according to EN50178)
Clearance Distance Secondary to Secondary (according to EN50178)
6,1
4,1
Insulation parameters
Rating
Climatic Classification Pollution Degree (PD)
Maximum altitude (above sea level)
Overvoltage category (according to EN50178)
Isolation resistance test, Prim-Sec
Rated insulation voltage (EN60664-1)
PD2
2000 meter above sea
OVC 3
4000 VDC/AC, rms,2s
8 kV Kat. III
15
2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
6. Environmental Conditions
Environmental Condition
Operating temperature
Storage temperature
Norm / Standard
Parameter
-40.. +85 °C
-40.. +85 °C
DIN 45930
CECC 50012
VDV 150
DIN 5510
prEN 100
High humidity
Flammability
85 °C, 85%
Heavy flammable materials only
RoHS / WEEE / China RoHS
EMC Condition
Norm / Standard
Parameter
DIN EN 61000-4-2
DIN EN 61800-3
DIN EN 61000-4-4
DIN EN 61800-3
DIN EN 61000-4-3
DIN EN 61800-3
DIN EN 61000-4-3
DIN EN 61800-3
6 kV contact discharge /
8 kV air discharge
ESD
Burst
≥ 2kV on adaptor board for signal lines
≥ 30V/m
30MHz – 1000 MHz
Immunity against external interference
Immunity against conducted interference
≥ 20V
150kHz – 80MHz
Conditions
Values (max.)
Sinusoidal 20Hz … 500Hz, 5g, 2h per axis (x, y, z)
Vibration
Random 20Hz … 2000Hz, 5g, 2 h per axis (x, y, z)
6000 Shocks (6 axis; +-x, +-y, +-z, 1000 shocks per axis), 30g, 18ms
Shock
- Connection between driver core and printed circuit board mechanical reinforced by using
support posts.
16
2011-04-04 – Rev05
© by SEMIKRON
SKYPER® 42 R
7. Marking
Every driver core is marked. The marking contains the following items.
DISCLAIMER
SEMIKRON reserves the right to make changes without further notice herein to improve reliability, function or design.
Information furnished in this document is believed to be accurate and reliable. However, no representation or warranty is
given and no liability is assumed with respect to the accuracy or use of such information. SEMIKRON does not assume
any liability arising out of the application or use of any product or circuit described herein. Furthermore, this technical
information may not be considered as an assurance of component characteristics. No warranty or guarantee expressed
or implied is made regarding delivery, performance or suitability. This document supersedes and replaces all information
previously supplied and may be superseded by updates without further notice.
SEMIKRON products are not authorized for use in life support appliances and systems without the express written
approval by SEMIKRON.
www.SEMIKRON.com
17
2011-04-04 – Rev05
© by SEMIKRON
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