SW20N50 [SEMIPOWER]
N-channel Power MOSFET; N沟道功率MOSFET
| 型号： | SW20N50 |
| 厂家： | 
XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. |
| 描述： | N-channel Power MOSFET |
| 文件： | 总7页 (文件大小：707K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SAMWIN
SW20N50
N-channel Power MOSFET
BVDSS : 500V
TO-3P
Features
ID
: 20A*
■ High ruggedness MOSFET
■ RDS(ON) (Max 0.27Ω)@VGS=10V
■ Gate Charge (Max 80nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
RDS(ON) : 0.27ohm
1
2
2
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to
DC converter block, high efficiency switch mode power supplies, power factor
correction, electronic lamp ballast based on half bridge.
3
Order Codes
Item
1
Sales Type
Marking
Package
TO-3P
Packaging
TUBE
SW W 20N50
SW20N50
Absolute maximum ratings
Symbol
Parameter
SW20N50
Unit
VDSS
ID
Drain to Source Voltage
500
20
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
14
A
IDM
VGS
EAS
(note 1)
80
A
Gate to Source Voltage
± 30
1200
30
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
4.5
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
300
2.38
PD
TSTG, TJ
TL
W/oC
oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 175
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
oC
Thermal characteristics
Value
Typ.
Symbol
Parameter
Unit
Min.
0.24
Max.
0.42
Rthjc
Rthcs
RthjA
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
oC/W
oC/W
oC/W
Thermal resistance, Junction to ambient
40
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW20N50
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
500
-
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
V/oC
/ ΔTJ
coefficient
VDS=500V, VGS=0V
VDS=400V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
-
-
-
-
-
-
-
-
10
uA
uA
nA
nA
IDSS
Drain to source leakage current
100
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 10A
3.0
-
5.0
V
0.27
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
-
-
-
-
-
-
-
-
-
-
3600
500
45
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
VDS=250V, ID=20A, RG=25Ω
VDS=500V, VGS=10V, ID=20A
Test conditions
pF
ns
140
430
310
280
100
-
td(off)
tf
Turn off delay time
Fall time
Qg
Total gate charge
Gate-source charge
Gate-drain charge
70
20
35
Qgs
Qgd
nC
-
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
-
-
-
20
80
1.5
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=20A, VGS=0V
V
Trr
ns
uC
IS=20A, VGS=0V,
dIF/dt=100A/us.
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repetitive rating : pulse width limited by junction temperature.
L = 6.2mH, IAS = 20.0A, VDD = 25V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 20A, di/dt = 200A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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SAMWIN
SW20N50
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Top :
15V
10V
9V
101
8V
6V
Bottom : 5.5V
101
25oC
150oC
100
-55oC
*. Notes :
1. 250us Pulse Test
2. TC = 25OC
*. Notes :
1. VDS = 50V
2. 250us Pulse Test
10-1
100
100
101
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
2.0
1.8
1.6
101
VGS = 20V
VGS = 10V
1.4
1.2
100
1.0
0.8
0.6
150OC 25OC
*. Notes :
1. VGS = 0V
*. Note : TJ = 25OC
2. 250us Pulse Test
0.4
10-1
0.2
0
5
10
15
20
25
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
3000
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
2500
2000
1500
1000
500
VDS = 400V
VDS = 250V
10
*. Notes :
1. VGS = 0V
8
2. f=1MHz
6
4
2
0
Ciss
Coss
Crss
*. Note : ID = 8.5 A
30
0
0
5
10
15
20
25
30
35
40
45
50
0
10
20
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
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SAMWIN
SW20N50
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
*. Notes :
1. VGS = 10 V
2. ID = 4.4 A
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
9
8
7
6
5
4
3
2
1
0
102
Operation in This Area
is Limited by R DS(on)
100 s
1 ms
10 ms
DC
101
100
10-1
،
ط
Notes : 1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
100
101
102
103
25
50
75
100
125
150
TC' Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Fig. 11. Transient thermal response curve
100
D=0.5
0.2
،
ط
Notes : 1. Z¥èJC(t) = 1 ،
ة
/W Max. 2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z¥èJC(t)
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
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SAMWIN
SW20N50
Fig. 1. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
VDS
QGD
QGS
DUT
VGS
1mA
Charge
Fig. 2. Switching time test circuit & waveform
VDS
90%
RL
VDS
RG
VDD
10%
10%
td(on)
VIN
tf
td(off)
10VIN
DUT
tr
tON
tOFF
Fig. 3. Unclamped Inductive switching test circuit & waveform
BVDSS
1
2
L X IAS2 X
EAS =
BVDSS - VDD
L
BVDSS
IAS
IAS
VDS
RG
VDD
ID(t)
DUT
10VIN
VDS(t)
time
tp
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SAMWIN
SW20N50
Fig. 4. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
-
VGS (DRIVER)
VDS
L
di/dt
IS
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDD
VDS (DUT)
VF
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
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SAMWIN
SW20N50
REVISION HISTORY
Revision No.
Changed Characteristics
Responsible
Date
Issuer
REV 1.0
REV 2.0
Origination, First Release
Alice Nie
2007.12.05
XZQ
Updated the format of datasheet and added
Order Codes.
Alice Nie
2011.03.24
XZQ
WWW.SEMIPOWER.COM.CN
西安芯派电子科技有限公司
深圳市南方芯源科技有限公司
地址：西安市高新区高新一路25号创新大厦MF6
电话：029 - 88253717 传真：029 - 88251977
地址：深圳市福田区天安数码城时代大厦A座2005
电话：0755 - 83981818 传真：0755 - 83476838
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