SCP25C60 [SEMIWELL]
Silicon Controlled Rectifiers; 可控硅整流器器
| 型号： | SCP25C60 |
| 厂家： | 
SEMIWELL SEMICONDUCTOR |
| 描述： | Silicon Controlled Rectifiers |
| 文件： | 总5页 (文件大小：637K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SemiWell Semiconductor
SCP25C60
Silicon Controlled Rectifiers
Symbol
3. Gate
○
○
○
Features
2. Anode
1. Cathode
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
= 25 A )
T(RMS)
◆ Low On-State Voltage (1.3V(Typ.)@ I
◆ Non-isolated Type
)
TM
TO-220
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Condition
Ratings
600
Units
V
A
A
Half Sine Wave : TC = 97 °C
180° Conduction Angle
IT(AV)
16
IT(RMS)
25
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
ITSM
I2t
Surge On-State Current
275
380
A
I2t for Fusing
A2s
t = 8.3ms
di/dt
PGM
PG(AV)
IFGM
VRGM
TJ
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
50
A/㎲
W
20
1
5
W
A
5.0
V
- 40 ~ 125
- 40 ~ 150
°C
°C
TSTG
Aug, 2003. Rev. 2
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SCP25C60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
VAK = VDRM
Repetitive Peak Off-State
Current
IDRM
VTM
IGT
TC = 25 °C
10
200
─
─
─
─
㎂
V
TC = 125 °C
Peak On-State Voltage (1)
Gate Trigger Current (2)
1.6
15
I
TM = 50 A
tp=380㎲
─
─
─
─
VAK = 6 V(DC), RL=10 Ω
mA
TC = 25 °C
VD = 6 V(DC), RL=10 Ω
VGT
Gate Trigger Voltage (2)
1.5
V
TC = 25 °C
TC = 125 °C
─
─
VGD
V
AK = 12 V, RL=100 Ω
Non-Trigger Gate Voltage (1)
0.2
V
─
─
─
─
Linearslopeup to VD=VDRM 67%,
Critical Rate of Rise Off-State
Voltage
dv/dt
250
V/㎲
Gate open
TJ = 125°C
IT = 100mA, Gate Open
IH
Holding Current
TC = 25 °C
2
20
mA
─
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
1.1
60
°C/W
°C/W
─
─
─
─
Junction to Ambient
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement.
2/5
SCP25C60
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
140
120
100
80
101
100
10-1
VGM(5V)
θ = 180o
PGM(20W)
PG(AV)(1W)
2
π
π
25oC
θ
360°
60
: Conduction Angle
θ
VGD(0.2V)
40
10-1
100
101
102
103
104
105
0
2
4
6
8
10
12
14
16
18
Average On-State Current [A]
Gate Current [mA]
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
10
1
102
125oC
0.1
25oC
0.01
101
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
0.5
1.0
1.5
2.0
2.5
3.0
3.5
On-State Voltage [V]
Time (sec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
10
10
1
1
0.1
-50
0.1
-50
0
50
100
150
0
50
100
150
Junction Temperature[oC]
Junction Temperature[oC]
3/5
SCP25C60
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
10
25
20
15
10
5
θ = 180o
θ = 120o
θ = 90o
θ = 60o
θ = 30o
1
0.1
-50
0
0
50
100
150
0
2
4
6
8
10
12
14
16
18
Junction Temperature[oC]
Average On-State Current [A]
4/5
SCP25C60
TO-220 Package Dimension
mm
Typ.
Inch
Typ.
Dim.
Min.
Max.
10.1
6.7
9.47
13.3
1.4
Min.
Max.
0.398
0.264
0.373
0.524
0.055
A
B
C
D
E
F
G
H
I
9.7
6.3
9.0
12.8
1.2
0.382
0.248
0.354
0.504
0.047
1.7
2.5
0.067
0.098
3.0
1.25
2.4
3.4
1.4
2.7
5.15
2.6
1.55
0.6
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
J
K
L
5.0
2.2
M
N
O
φ
1.25
0.45
0.6
1.0
3.6
0.142
φ
I
H
E
A
C1.0
B
C
F
M
L
G
1
2
3
D
1. Cathode
2. Anode
3. Gate
J
N
O
K
5/5
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