SFH054 [SEMIWELL]
N-Channel MOSFET; N沟道MOSFET
| 型号： | SFH054 |
| 厂家： | 
SEMIWELL SEMICONDUCTOR |
| 描述： | N-Channel MOSFET |
| 文件： | 总7页 (文件大小：951K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
SemiWell Semiconductor
SFH054
N-Channel MOSFET
Features
2. Drain
Symbol
{
■ Low R (on) (0.014Ω )@V =10V
DS
GS
●
■ Low Gate Charge (Typical 70nC)
■ Low Crss (Typical 160pF)
◀
▲
●
●
1. Gate
{
■ Improved dv/dt Capability
■ 100% Avalanche Tested
{
3. Source
■ Maximum Junction Temperature Range (175°C)
General Description
TO-247
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
1
2
3
Absolute Maximum Ratings
Symbol
Parameter
Value
60
Units
VDSS
Drain to Source Voltage
V
A
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
70*
ID
64
A
A
IDM
VGS
EAS
dv/dt
Drain Current Pulsed
(Note 1)
360
±25
800
7.0
Gate to Source Voltage
V
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
(Note 2)
(Note 3)
mJ
V/ns
W
230
1.5
PD
Derating Factor above 25 °C
W/°C
°C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
- 55 ~ 175
300
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
°C
Thermal Characteristics
Value
Symbol
Parameter
Units
Min.
Typ.
Max.
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
-
-
-
-
0.24
-
0.65
-
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
40
1/7
March, 2004. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SFH054
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0V, ID = 250uA
D = 1mA, referenced to 25 °C
DS = 60V, VGS = 0V
Drain-Source Breakdown Voltage
60
-
-
-
-
V
Δ BVDSS
/
Breakdown Voltage Temperature
coefficient
I
0.056
V/°C
Δ TJ
V
-
-
-
-
1
uA
uA
nA
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 48V, TC = 150 °C
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
10
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
100
-100
IGSS
-
-
On Characteristics
VGS(th)
VDS = VGS, ID = 250uA
VGS =10 V, ID = 35A
Gate Threshold Voltage
2.0
-
-
-
4.0
V
Static Drain-Source On-state Resis-
tance
RDS(ON)
0.014
Ω
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
2350
690
3050
890
pF
Coss
Crss
Output Capacitance
V
GS =0 V, VDS =25V, f = 1MHz
Reverse Transfer Capacitance
160
200
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
-
-
-
-
-
-
30
60
70
130
260
200
90
VDD =30V, ID =35A, RG =50Ω
※ see fig. 13. (Note 4, 5)
ns
Turn-off Delay Time
Fall Time
125
95
Qg
Total Gate Charge
Gate-Source Charge
70
V
DS =48V, VGS =10V, ID =70A
Qgs
18
-
nC
Qgd
Gate-Drain Charge(Miller Charge)
-
24
-
※ see fig. 12. (Note 4, 5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Parameter
Test Conditions
Min.
Typ.
Max.
70
Unit.
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
-
-
-
-
A
ISM
360
1.5
VSD
IS =70A, VGS =0V
V
trr
Reverse Recovery Time
-
-
62
-
-
ns
nC
IS=70A,VGS=0V,dIF/dt=100A/us
Qrr
Reverse Recovery Charge
110
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 250 uH, IAS = 70A, VDD = 25V, RG = 0Ω , Starting TJ = 25°C
3. ISD ≤ 70A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
* Current limited by package,(Die Current=90A)
2/7
SFH054
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
102
101
100
8.0 V
7.0 V
6.0 V
5.5 V
102
101
100
5.0 V
Bottom : 4.5 V
175oC
25oC
-55oC
※ Notes :
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
1. VDS = 25V
2. 250µ s Pulse Test
10-1
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
30
25
20
15
10
5
102
101
100
VGS = 20V
VGS = 10V
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : T = 25℃
J
0
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
12
C
iss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
VDS = 30V
VDS = 48V
10
8
※ Notes :
1. VGS = 0V
2. f=1MHz
C
6
iss
4
Coss
2
※ Note : ID = 70.0 A
Crss
0
0
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3/7
SFH054
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig 8. On-Resistance Variation
vs. Junction Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
※ Notes :
1. VGS = 10 V
2. ID = 35 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig 10. Maximum Drain Current
vs. Case Temperature
Fig 9. Maximum Safe Operating Area
103
102
101
100
100
80
60
40
20
0
Operation in This Area
is Limited by R DS(on)
limited by Package
100 µs
1 ms
10 ms
※ Notes :
1. TC = 25 o
2. TJ = 175 o
3. Single Pulse
C
C
10-1
100
101
102
25
50
75
100
125
150
175
TC' Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Fig 11. Transient Thermal Response Curve
10 0
1 0-1
1 0-2
1 0-3
D =0.5
0.2
0.1
0.05
0.02
0.01
single pulse
※
N o te s
:
1. Z θ (t)
=
0.65 ℃ /W M ax.
2. D uty F actor, D = t1 /t2
3. T JM T C P D M Z θ (t)
JC
-
=
*
JC
1 0-5
1 0-4
10-3
10-2
10 -1
100
101
t1, S q u are W ave P ulse D ura tion [sec]
4/7
SFH054
Fig. 12. Gate Charge Test Circuit & Waveforms
VGS
10V
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
1mA
Charge
Fig 13. Switching Time Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
( 0.5 rated VDS
)
10%
10V
Vin
DUT
RG
Pulse
td(on)
tr
td(off)
tf
Generator
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
BVDSS
--------------------
BVDSS -- VDD
1
----
2
VDS
EAS
=
LL IAS
2
VDD
BVDSS
IAS
ID
RG
ID (t)
VDD
VDS (t)
DUT
10V
t p
Time
5/7
SFH054
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I S
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
6/7
SFH054
TO-247 Package Dimension
mm
Inch
Typ.
Dim.
Min.
Typ.
Max.
16.03
21.10
20.31
4.58
Min.
Max.
0.631
0.831
0.800
0.180
0.172
0.220
0.203
0.081
0.096
A
B
C
D
E
F
G
H
I
15.77
20.80
20.05
4.48
4.27
5.32
4.90
1.90
2.35
0.621
0.819
0.789
0.176
0.168
0.209
0.193
0.075
0.093
4.37
5.58
5.16
2.06
2.45
J
0.6
0.024
K
L
1.2
1.33
1.33
3.25
3.66
0.047
0.042
0.118
0.140
0.052
0.052
0.128
0.144
1.07
2.99
3.56
M
φ
G
A
H
B
C
D
E
φ
I
L
1
2
3
1. Gate
2. Drain
M
3. Source
F
K
J
7/7
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