SFP6N40

更新时间:2024-09-18 12:50:14
品牌:SEMIWELL
描述:N-Channel MOSFET

SFP6N40 概述

N-Channel MOSFET N沟道MOSFET

SFP6N40 数据手册

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SemiWell Semiconductorꢀ  
SFP6N40  
N-Channel MOSFET  
Features  
ꢀ RDS(ON)ꢀMaxꢀ1.0ꢀohmꢀatꢀVGSꢀ=ꢀ10Vꢀ  
ꢀ GateꢀChargeꢀ(ꢀTypicalꢀ18nC)ꢀ  
ꢀ Improveꢀdv/dtꢀcapability,ꢀFastꢀswitchingꢀ  
ꢀ 100%ꢀavalancheꢀTestedꢀ  
General Description  
Thisꢀ MOSFETꢀ isꢀ producedꢀ usingꢀ advancedꢀ planarꢀ stripꢀ  
DMOSꢀ technology.ꢀ Thisꢀ latestꢀ technologyꢀ hasꢀ beenꢀ  
especiallyꢀ designedꢀ toꢀ minimizeꢀ onꢁstateꢀ resistanceꢀ haveꢀ aꢀ  
highꢀruggedꢀavalancheꢀcharacteristics.ꢀTheseꢀdeviceꢀareꢀwellꢀ  
suitedꢀ forꢀ highꢀ efficiencyꢀ switchꢀ modeꢀ powerꢀ supplyꢀ activeꢀ  
powerꢀfactorꢀcorrection.ꢀElectronicꢀlampꢀbasedꢀonꢀhalfꢀbridgeꢀ  
topology  
AbsoluteꢀMaximumꢀRatingsꢀ(TJꢀ=ꢀ25unless otherwise specified)ꢀ  
Symbolꢀ  
Parameterꢀ  
Ratingsꢀ  
400ꢀ  
Unitsꢀ  
Vꢀ  
VDSS  
IDꢀ  
DrainꢁSourceꢀVoltageꢀ  
DrainꢀCurrentꢀ ꢀ TC=25℃  
6ꢀ  
Aꢀ  
TC=100ꢀ  
GateꢁSourceꢀVoltageꢀ  
3.6ꢀ  
VGSS  
±ꢀ 30ꢀ  
24ꢀ  
Vꢀ  
Aꢀ  
IDM  
EAS  
EAR  
DrainꢀCurrentꢀ ꢀ pulseꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ  
SingleꢀPulseꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ2)ꢀ  
RepetitiveꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ ꢀ  
PeakꢀdiodeꢀRecoveryꢀdv/dtꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ3)ꢀ  
PowerꢀDissipationꢀTC=25ꢀ  
350ꢀ  
mJꢀ  
mJꢀ  
V/nsꢀ  
Wꢀ  
7.6ꢀ  
dv/dtꢀ  
PDꢀ  
4.5ꢀ  
76ꢀ  
Tj,ꢀTSTG  
OperationꢀandꢀStorageꢀTemperatureꢀrangeꢀ  
ꢁ45ꢀ~ꢀ150ꢀ  
ꢀ  
Copyright@SemiWellꢀSemiconductorꢀLtd.,ꢀAllꢀrightsꢀareꢀreservedꢀ  
SFP6N40  
ThermalꢀCharacteristicsꢀ  
Ratingsꢀ  
1.65ꢀ  
0.5ꢀ  
Symbolꢀ  
Parameterꢀ  
Unitꢀ  
/Wꢀ  
/Wꢀ  
/Wꢀ  
R
R
R
θJCꢀ ꢀ  
θCSꢀ  
θJAꢀ  
ThermalꢀResistanceꢀJunctionꢀtoꢀCaseꢀ ꢀ  
ThermalꢀResistanceꢀCaseꢀtoꢀSinkꢀTyp.ꢀ  
ThermalꢀResistanceꢀJunctionꢀtoꢀAmbientꢀ  
62.5ꢀ  
ElectricalꢀCharacteristicsꢀ(ꢀTCꢀ=ꢀ25Unlessꢀotherwiseꢀnoted)ꢀ  
Ratingsꢀ  
Minꢀ Typ.ꢀ Maxꢀ  
Symbolꢀ  
Itemsꢀ  
Conditionsꢀ  
Unitꢀ  
BVDSS  
DrainꢁSourceꢀBreakdownꢀVoltageꢀ  
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ250uA  
400ꢀ  
Vꢀ  
ΔBVDSSꢀ  
/ΔTJꢀ  
Breakdownꢀ  
coefficientꢀ  
Voltageꢀ  
Temperatureꢀ  
IDꢀ=250uA,ꢀReferenceꢀtoꢀ25ꢀ  
0.6ꢀ  
V/ꢀ  
VDSꢀ=ꢀ400V,ꢀVGSꢀ=ꢀ0Vꢀ  
1ꢀ  
IDSS  
ZeroꢀgateꢀvoltageꢀDrainꢀCurrentꢀ  
uAꢀ  
VDSꢀ=ꢀ320V,ꢀTSꢀ=ꢀ125ꢀ  
10ꢀ  
IGSSF  
GateꢀbodyꢀleakageꢀcurrentꢀForwardꢀ  
GateꢀbodyꢀleakageꢀcurrentꢀReverseꢀ  
VGSꢀ=ꢀ30V,ꢀVDSꢀ=ꢀ0Vꢀ  
VGSꢀ=ꢀꢁ30V,ꢀVDSꢀ=ꢀ0Vꢀ  
100ꢀ  
nAꢀ  
nAꢀ  
IGSSR  
ꢁ100ꢀ  
OnꢀCharacteristicsꢀ  
VGS(th)  
VGSꢀ=ꢀVDS,ꢀIDꢀ=ꢀ250uAꢀ  
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ3.0Aꢀ  
GateꢀThresholdꢀVoltageꢀ  
2.0ꢀ  
4.0ꢀ  
Vꢀ  
ꢂꢀ  
RDS(ON)  
StaticꢀDrainꢁSourceꢀOnꢁResistanceꢀ  
0.75ꢀ 1.0ꢀ  
DynamicꢀCharacteristicsꢀ  
Ciss  
InputꢀCapacitanceꢀ  
520ꢀ  
pFꢀ  
VDSꢀ=ꢀ25ꢀV,ꢀVGSꢀ=ꢀ0Vꢀ  
fꢀ=ꢀ1.0MHz  
Coss  
Crss  
outputꢀCapacitanceꢀ  
80ꢀ  
15ꢀ  
pFꢀ  
pFꢀ  
ReverseꢀTransferꢀCapacitanceꢀ  
2/5ꢀ  
SFP6N40  
SwitchingꢀCharacteristicsꢀ  
Symbolꢀ  
Itemsꢀ  
TurnꢁonꢀDelayꢀTimeꢀ  
Conditionsꢀ  
Minꢀ Typ.ꢀ Maxꢀ Unitsꢀ  
td(on)  
15ꢀ  
nsꢀ  
VDDꢀ=ꢀ200V,ꢀIDꢀ=ꢀ6.0Aꢀ  
RGꢀ=ꢀ25ꢀꢂꢀ  
trꢀ  
TurnꢁonꢀRiseꢀTimeꢀ  
TurnꢁoffꢀDelayꢀTimeꢀ  
TurnꢁoffꢀFallꢀTimeꢀ  
65ꢀ  
20ꢀ  
40ꢀ  
18ꢀ  
2.5ꢀ  
nsꢀ  
nsꢀ  
nsꢀ  
nCꢀ  
nCꢀ  
td(off)  
tfꢀ  
(noteꢀ4,5)ꢀ  
Qgꢀ  
Qgsꢀ  
TotalꢀGateꢀChargeꢀ  
VDSꢀ=ꢀ320V,ꢀIDꢀ=ꢀ6.0Aꢀ  
VGSꢀ=ꢀ10Vꢀ  
GateꢁSourceꢀChargeꢀ  
(noteꢀ4,5)ꢀ  
Qgdꢀ  
GateꢁDrainꢀChargeꢀ  
8.5ꢀ  
nCꢀ  
DrainꢁSourceꢀDiodeꢀCharacteristicsꢀ ꢀ  
ISꢀ  
MaximumꢀContinuousꢀDrainꢁSourceꢀdiodeꢀForwardꢀCurrent  
MaximumꢀPulseꢀDrainꢁSourceꢀdiodeꢀForwardꢀCurrentꢀ  
6.0ꢀ  
Aꢀ  
Aꢀ  
ISM  
24.0ꢀ  
1.4ꢀ  
VSD  
trrꢀ  
DrainꢁSourceꢀdiodeꢀForwardꢀvoltageꢀ  
ReverseꢀRecoveryꢀTimeꢀ  
VGSꢀ=ꢀ0V,ꢀIsꢀ=ꢀ6.0Aꢀ  
Vꢀ  
230ꢀ  
1.8ꢀ  
nSꢀ  
uCꢀ  
VGSꢀ=ꢀ0V,ꢀIsꢀ=ꢀ6.0Aꢀ  
dlF/dtꢀ=100ꢀA/usꢀ ꢀ ꢀ ꢀ ꢀ (noteꢀ4)ꢀ  
Qrrꢀ  
ReverseꢀRecoveryꢀChargeꢀ  
Notesꢀ  
1.ꢀ RepetitiveꢀRatingꢀ:ꢀPulseꢀwidthꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ  
2.ꢀ Lꢀ=ꢀ17mH,ꢀIASꢀ=ꢀ6.0A,ꢀVDDꢀ=ꢀ50V,ꢀRGꢀ=ꢀ25ꢀꢂ,ꢀstartingꢀTJꢀ=ꢀ25ꢀ  
3.ꢀ ISDꢀ≤ꢀ6.0A,ꢀdi/dtꢀ≤ꢀ200A/us,ꢀVDDꢀ≤ꢀBVDSSꢀ,ꢀstartingꢀTJꢀ=ꢀ25ꢀ  
4.ꢀ PulseꢀTestꢀ:ꢀPulseꢀwidthꢀ≤ꢀ300us,ꢀDutyꢀcycleꢀ≤ꢀ2%ꢀ  
5.ꢀ Essentiallyꢀindependentꢀofꢀoperationꢀtemperatureꢀ  
3/5ꢀ  
SFP6N40  
Fig.ꢀ1ꢀOnꢁStateꢀCharacteristicsꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ Fig.ꢀ2ꢀOnꢁResistanceꢀvariationꢀvsꢀDrainꢀCurrentꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ AndꢀgateꢀVoltageꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Fig.ꢀ3ꢀBreakdownꢀVoltageꢀVariationꢀvsꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ Figꢀ4.ꢀOnꢁResistanceꢀVariationꢀvsꢀTemperatureꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ Temperatureꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Fig.ꢀ5ꢀMaximumꢀDrainꢀCurrentꢀvsꢀCaseꢀTemp.ꢀ  
4/5ꢀ  
SFP6N40  
TOꢁ220ꢀPackageꢀDimensionꢀ  
5/5ꢀ  

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