TN815R [SEMIWELL]

Silicon Controlled Rectifiers; 可控硅整流器器
TN815R
型号: TN815R
厂家: SEMIWELL SEMICONDUCTOR    SEMIWELL SEMICONDUCTOR
描述:

Silicon Controlled Rectifiers
可控硅整流器器

可控硅整流器
文件: 总5页 (文件大小:537K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary  
SemiWell Semiconductor  
TN815R  
Silicon Controlled Rectifiers  
Symbol  
3. Gate  
Features  
2. Anode  
1. Cathode  
Repetitive Peak Off-State Voltage : 600V  
R.M.S On-State Current ( I  
= 8 A )  
T(RMS)  
Low On-State Voltage (1.4V(Typ.)@ I  
Non-isolated Type  
)
TM  
D-PAK  
General Description  
2
Standard gate triggering SCR is suitable for the application where  
requiring high bidirectional blocking voltage capability and also  
suitable for over voltage protection ,motor control circuit in power  
tool, inrush current limit circuit and heating control system.  
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
Average On-State Current  
R.M.S On-State Current  
Condition  
Ratings  
Units  
600  
5
V
A
A
Half Sine Wave : TC = 109 °C  
180° Conduction Angle  
IT(AV)  
IT(RMS)  
8
1/2 Cycle, 60Hz, Sine Wave  
Non-Repetitive  
ITSM  
I2t  
Surge On-State Current  
73  
A
I2t for Fusing  
A2s  
t = 8.3ms  
26.6  
di/dt  
PGM  
PG(AV)  
IFGM  
VRGM  
TJ  
Critical rate of rise of on-state current  
Forward Peak Gate Power Dissipation  
Forward Average Gate Power Dissipation  
Forward Peak Gate Current  
Reverse Peak Gate Voltage  
Operating Junction Temperature  
Storage Temperature  
50  
A/  
W
5
1
2
W
A
5.0  
V
- 40 ~ 125  
- 40 ~ 150  
°C  
°C  
TSTG  
Apr, 2004. Rev.0  
1/5  
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.  
TN815R  
Electrical Characteristics ( TC = 25 °C unless otherwise noted )  
Ratings  
Typ.  
Symbol  
Items  
Conditions  
Unit  
Min.  
Max.  
VAK = VDRM  
Repetitive Peak Off-State  
Current  
IDRM  
VTM  
IGT  
TC = 25 °C  
10  
200  
V
TC = 125 °C  
Peak On-State Voltage (1)  
Gate Trigger Current (2)  
1.6  
15  
I
TM = 16 A  
tp=380㎲  
VAK = 6 V(DC), RL=10 Ω  
mA  
TC = 25 °C  
VD = 6 V(DC), RL=10 Ω  
VGT  
Gate Trigger Voltage (2)  
1.5  
V
TC = 25 °C  
TC = 125 °C  
VGD  
V
AK = 12 V, RL=100 Ω  
Non-Trigger Gate Voltage (1)  
0.2  
V
Linearslopeup to VD=VDRM 67%,  
Critical Rate of Rise Off-State  
Voltage  
dv/dt  
200  
V/㎲  
Gate open  
TJ = 125°C  
IT = 100mA, Gate Open  
IH  
Holding Current  
TC = 25 °C  
20  
mA  
Rth(j-c)  
Rth(j-a)  
Thermal Impedance  
Thermal Impedance  
Junction to case  
2.0  
70  
°C/W  
°C/W  
Junction to Ambient  
Notes :  
1. Pulse Width = 1.0 ms , Duty cycle 1%  
2. RGK Current not Included in measurement.  
2/5  
TN815R  
Fig 1. Gate Characteristics  
Fig 2. Maximum Case Temperature  
101  
100  
10-1  
160  
140  
120  
100  
80  
VGM(5V)  
PGM(5W)  
θ = 180o  
PG(AV)(1W)  
2
π
π
25oC  
θ
360°  
60  
: Conduction Angle  
θ
VGD(0.2V)  
40  
10-1  
100  
101  
102  
103  
0
1
2
3
4
5
6
Average On-State Current [A]  
Gate Current [mA]  
Fig 3. Typical Forward Voltage  
Fig 4. Thermal Response  
102  
101  
100  
10  
1
125oC  
0.1  
0.01  
25oC  
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
On-State Voltage [V]  
Time (sec)  
Fig 6. Typical Gate Trigger Current vs.  
Junction Temperature  
Fig 5. Typical Gate Trigger Voltage vs.  
Junction Temperature  
10  
10  
1
1
0.1  
-50  
0.1  
-50  
0
50  
100  
150  
0
50  
100  
150  
Junction Temperature[oC]  
Junction Temperature[oC]  
3/5  
TN815R  
Fig 7. Typical Holding Current  
Fig 8. Power Dissipation  
9
8
7
6
5
4
3
2
1
0
10  
θ = 180o  
θ = 120o  
θ = 90o  
θ = 60o  
θ = 30o  
1
0.1  
-50  
0
50  
100  
150  
0
1
2
3
4
5
6
Junction Temperature[oC]  
Average On-State Current [A]  
4/5  
TN815R  
TO-252(D-PAK) Package Dimension  
mm  
Inch  
Typ.  
Dim.  
Min.  
6.48  
5.0  
Typ.  
6.604  
5.08  
Max.  
6.73  
Min.  
0.255  
0.197  
0.292  
0.086  
0.03  
Max.  
0.265  
0.205  
0.322  
0.094  
0.034  
0.044  
A
B
C
D
E
F
G
H
I
0.26  
0.2  
5.21  
7.42  
2.184  
0.762  
1.016  
7.8  
8.18  
0.307  
0.09  
0.032  
0.042  
0.09  
0.09  
0.024  
0.042  
0.02  
0.03  
0.06  
2.286  
0.813  
1.067  
2.286  
2.286  
0.61  
2.388  
0.864  
1.118  
0.04  
0.534  
1.016  
0.686  
1.118  
0.021  
0.04  
0.027  
0.044  
J
1.067  
0.508  
0.762  
1.57  
K
L
φ
A
B
D
E
φ
F
C
I
1. Cathode  
2
2. Anode  
3. Gate  
1
3
K
L
G
H
J
5/5  

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