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元器件品牌
1SS321
[SEMTECH_ELEC]
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE; 硅外延肖特基二极管
元器件型号：
1SS321
生产厂家：
SEMTECH ELECTRONICS LTD.
描述和应用：
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
硅外延肖特基二极管
肖特基二极管 光电二极管
PDF文件：
总2页 (文件大小：130K)
下载文档：
下载PDF数据表文档文件
型号参数：1SS321参数
查看货源
1SS321(SAWAF,F)
Rectifier Diode, Schottky, 2 Element, 0.05A, 12V V(RRM), Silicon
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TOSHIBA
1SS321_07
TOSHIBA Diode Silicon Epitaxial Planar Type
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TOSHIBA
1SS321TE85L
暂无描述
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0
TOSHIBA
1SS321TE85LF
Low-Voltage High-Speed Switching
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17
TOSHIBA
1SS321TE85R
暂无描述
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0
TOSHIBA
1SS321TE85R2
DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
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0
TOSHIBA
1SS322
Low forward voltage:VF(3) = 0.54 V(Typ) Low reverse current:trr = 5A (Typ)
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TYSEMI
1SS322
LOW VOLTAGE HIGH SPEED SWITCHING
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33
KEXIN
1SS322
Low Voltage High Speed Switching
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38
TOSHIBA
1SS322
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
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98
TOSHIBA
1SS322(T5L,PP,F)
Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
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0
TOSHIBA
1SS322_07
Low Voltage High Speed Switching
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156
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18
TOSHIBA
1SS322TE85R
DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode
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156
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0
TOSHIBA
1SS335
High reliability with high surge current handling capability.
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156
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125
HTSEMI
1SS336
Small package Low forward voltage: VF3 = 0.84 V(Typ). Small total capacitance:CT = 7pF(Typ).
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12
TYSEMI
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