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元器件品牌
1SS367
[SEMTECH_ELEC]
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE; 硅外延肖特基二极管
元器件型号：
1SS367
生产厂家：
SEMTECH ELECTRONICS LTD.
描述和应用：
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
硅外延肖特基二极管
肖特基二极管 光电二极管
PDF文件：
总3页 (文件大小：175K)
下载文档：
下载PDF数据表文档文件
型号参数：1SS367参数
查看货源
1SS367,H3F(B
Rectifier Diode
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0
TOSHIBA
1SS367_07
High Speed Switching Application
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30
TOSHIBA
1SS368
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
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87
TOSHIBA
1SS368
ULTRA HIGH SPEED SWITCHING APPLICATION
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KEXIN
1SS368
SILICON EPITAXIAL PLANAR DIODE
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SEMTECH_ELEC
1SS368
Small Package Low forward voltage :Vf(3) = 0.98V(TYP.)
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TYSEMI
1SS369
Small Package Low forward voltage :Vf(3) = 0.54V(TYP.)
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9
TYSEMI
1SS369
LOW VOLTAGE HIGH SPEED SWITCHING
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26
KEXIN
1SS369
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
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89
TOSHIBA
1SS369
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
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12
SEMTECH_ELEC
1SS370
Plastic-Encapsulated Diode
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21
TOSHIBA
1SS370
High Voltage, High Speed Switching Applications
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37
TOSHIBA
1SS370
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
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57
TOSHIBA
1SS370
Silicon Epitaxial Planar Type
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16
KEXIN
1SS370
Low forward voltage :VF(3)= 0.9 V(Typ) Fast reverse recovery time :trr = 60ns (MAX.)
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TYSEMI
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