1N4148W [SEMTECH]
Silicon Epitaxial Planar Small Signal Diode; 硅外延平面小信号二极管
| 型号： | 1N4148W |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | Silicon Epitaxial Planar Small Signal Diode |
| 文件： | 总3页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4148W
Silicon Epitaxial Planar Small Signal Diode
Features
PINNING
• SOD-123 package
DESCRIPTION
Cathode
PIN
1
• Fast switching
• These diodes are also available in other case
style including the DO-35 case with the type
Anode
2
2
1
designation 1N4148, the MiniMELF case with the
type designation LL4148 and the MicroMELF
case with the type designation MCL4148.
W1
Top View
Marking Code: "W1"
Simplified outline SOD-123 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VRM
Value
100
75
Unit
V
Peak Reverse Voltage
Reverse Voltage
VR
V
Average Rectified Current Half Wave Rectification with
IF(AV)
150
mA
Resistive Load f ≥ 50 Hz
Non-repetitive Peak Forward Surge Current at t = 1 μs
Power Dissipation
IFSM
Ptot
RθJA
TJ
2
400
A
mW
O
Thermal Resistance from Junction to Ambient Air
Junction Temperature
450
C/W
O
C
150
O
C
Storage Temperature Range
Tstg
- 65 to + 150
O
Electrical Characteristics (Ta = 25 C)
Parameter
Symbol
Min.
Max.
1
Unit
V
Forward Voltage
at IF = 10 mA
VF
-
Reverse Current
at VR = 20 V
at VR = 75 V
-
-
-
25
5
50
nA
µA
µA
IR
O
at VR = 20 V, TJ = 150 C
Capacitance
at VF = VR = 0 V
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
Ctot
trr
-
-
-
4
4
pF
ns
Voltage Rise when Switching On (tested with 50 mA Pulses
tp = 0.1 μs, Rise Time < 30 ns, fp = 5 to 100 KHz)
Vfr
2.5
V
-
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
ηv
0.45
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/01/2008
1N4148W
Forward characteristics
3
10
2
10
~
~
~
10
1
Tj=100 C
Tj=25 C
Rectification Efficiency Measurement Circuit
-2
10
-1
10
0
1
2
VF (V)
Amissible power dissipation
vs. ambient temperature
1000
Leakage current vs. junction temperature
104
5
2
103
800
600
5
2
102
5
400
200
2
10
5
VR=20V
2
1
0
0
200
200
100
100
Tj ( C)
Tamb ( C)
Reverse capacitance vs. reverse voltage
Amissible repetitive peak forward current vs. pulse duration
Tj=25
f=1MHz
C
100
1.1
5
4
3
2
1.0
0.9
10
V=0
5
4
3
2
0.1
0.2
0.8
0.7
1
0.5
5
4
3
2
0
2
4
6
8
10
0.1
10
-4
-1
2
-3
-2
-5
2
2
2
2
2
5
5
5
5
5
5
10
10
10
10
1
10
VR (V)
tp (s)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/01/2008
1N4148W
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
ALL ROUND
∠
HE
D
A
c
∠
A
UNIT
mm
bp
D
E
HE
v
O
1.15
1.05
0.6
0.5
2.7
2.6
1.65
1.55
3.9
3.7
0.135
0.127
0.2
5
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/01/2008
相关型号：
1N4148W-E3-18
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
VISHAY
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