1N5818WB [SEMTECH]
1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE; 1表面贴装肖特基二极管
| 型号： | 1N5818WB |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5817WB-1N5819WB
1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
Top View
Marking Code: 1N5817WB: A0
1N5818WB: ME
1N5819WB: SR
Simplified outline SOD-123 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VR
Value
Unit
V
1N5817WB
20
30
40
Reverse Voltage
1N5818WB
1N5819WB
IO
1
A
A
Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
(8.3 ms Single Half Sine-Wave)
IFSM
25
Power Dissipation
Ptot
Tj
450
mW
O
C
Operating Temperature Range
Storage Temperature Range
- 55 to + 150
- 55 to + 150
O
C
TS
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
Reverse Breakdown Voltage
at IR = 1 mA
1N5817WB
1N5818WB
1N5819WB
20
30
40
-
-
-
VBR
V
Reverse Voltage Leakage Current
at VR = 20 V
at VR = 30 V
at VR = 40 V
at VR = 4 V
1N5817WB
1N5818WB
1N5819WB
1N5819WB
1N5819WB
-
-
-
-
-
1
1
1
IR
mA
0.05
0.075
at VR = 6 V
Forward Voltage
at IF = 0.1 A
1N5819WB
-
0.45
at IF = 1 A
1N5817WB
1N5818WB
1N5819WB
-
-
-
0.45
0.55
0.6
VF
V
at IF = 3 A
1N5817WB
1N5818WB
1N5819WB
-
-
-
0.75
0.875
0.9
Diode Capacitance
at VR = 4 V, f = 1 MHz
CD
-
120
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/12/2006
1N5817WB-1N5819WB
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
ALL ROUND
∠
HE
D
A
c
∠
A
UNIT
mm
bp
D
E
HE
v
O
1.15
1.05
0.6
0.5
2.7
2.6
1.65
1.55
3.9
3.7
0.135
0.127
0.2
5
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/12/2006
相关型号：
1N5818WS
For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications.
TYSEMI
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