1N6263WS [SEMTECH]
SILICON SCHOTTKY BARRIER DIODE; 硅肖特基二极管
| 型号： | 1N6263WS |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6263WS
SILICON SCHOTTKY BARRIER DIODE
for general purpose applications
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
S2
Top View
Marking Code: "S2"
Simplified outline SOD-323 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VRRM
IFSM
Ptot
Value
Unit
V
40
Peak Reverse Voltage
2
A
Max. Single Cycle Surge Forward Current (10 s Square wave)
Power Dissipation
400 1)
200
mW
O
C
Tj
Junction Temperature
O
C
TS
- 55 to + 200
Storage Temperature Range
1) Valid provided the leads direct at the case are kept at ambient temperature.
O
Characteristics at Ta = 25 C
Parameter
Symbol
V(BR)R
Min.
40
Max.
Unit
Reverse Breakdown Voltage
-
V
at IR = 10 μA
Forward Voltage
at IF = 1 mA
at IF = 15 mA
VF
-
-
0.39
0.9
V
Leakage Current
at VR = 30 V
IR
Ctot
trr
-
-
-
200
2.2
1
nA
pF
ns
Junction Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 5 mA , Recover to 0.1 IR
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
1N6263WS
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
1N6263WS
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
HE
A
D
E
bp
UNIT
mm
A
bp
C
D
E
HE
1.10
0.80
2.80
2.30
0.40
0.25
1.35
1.15
0.15
0.00
1.80
1.60
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
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