1ST112WS [SEMTECH]

SILICON EPITAXIAL PLANAR SWITCHING DIODES; 硅外延平面开关二极管
1ST112WS
型号: 1ST112WS
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

SILICON EPITAXIAL PLANAR SWITCHING DIODES
硅外延平面开关二极管

二极管 开关 局域网
文件: 总3页 (文件大小:305K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1ST112WS  
SILICON EPITAXIAL PLANAR SWITCHING DIODES  
PINNING  
DESCRIPTION  
Cathode  
PIN  
1
Anode  
2
2
1
W2  
Top View  
Marking Code: "W2"  
Simplified outline SOD-323 and symbol  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
Peak Reverse Voltage  
VRM  
VR  
40  
V
V
Reverse Voltage  
40  
Average Forward Current  
Peak Forward Current  
IF(AV)  
IFM  
200  
mA  
mA  
A
600  
Non-Repetitive Peak Forward Surge Current (t = 1 s)  
Junction Temperature  
IFSM  
Tj  
1
O
C
150  
O
C
Storage Temperature Range  
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
VF  
Max.  
1.1  
Unit  
V
Forward Voltage  
at IF = 200 mA  
Reverse Current  
at VR = 15 V  
at VR = 35 V  
50  
500  
IR  
nA  
Total Capacitance  
at VR = 0 V, f = 1 MHz  
CT  
trr  
4
pF  
ns  
Reverse Recovery Time  
at VR = 6 V, IF = 10 mA, Irr = 0.1·IR, RL = 100  
10  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 07/04/2009  
1ST112WS  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 07/04/2009  
1ST112WS  
PACKAGE OUTLINE  
Plastic surface mounted package; 2 leads  
SOD-323  
A
c
HE  
A
D
E
bp  
UNIT  
mm  
A
bp  
C
D
E
HE  
1.10  
0.80  
2.80  
2.30  
0.40  
0.25  
1.35  
1.15  
0.15  
0.00  
1.80  
1.60  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 07/04/2009  

相关型号:

1SV100

SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
TOSHIBA

1SV101

VARIABLE CAPACITANCE DIODE (FM TUNER APPLICATIONS)
TOSHIBA

1SV101(F)

Diode VAR Cap Single 15V 28pF 3-Pin Mini
TOSHIBA

1SV102

VARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS)
TOSHIBA

1SV103

Variable Capacitance Diode, FM Radio Band Tuning Applications
TOSHIBA

1SV118

Variable Capacitance Diode, 600pF C(T), Silicon, Hyperabrupt, TO-92, 2 PIN
NEC

1SV121

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
HITACHI

1SV121

SILICON EPITAXIAL PLANAR PIN DIODE
TAYCHIPST

1SV121RX

Pin Diode, 100V V(BR), Silicon, DO-34
HITACHI

1SV121RX

100V, SILICON, PIN DIODE, DO-34
RENESAS

1SV121RY

Pin Diode, 100V V(BR), Silicon, DO-34
RENESAS

1SV121TA

Pin Diode, 100V V(BR), Silicon, DO-34
RENESAS