BAS20 [SEMTECH]
HIGH VOLTAGE SWITCHING DIODES; 高压开关二极管
| 型号： | BAS20 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | HIGH VOLTAGE SWITCHING DIODES |
| 文件： | 总1页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS19, BAS20, BAS21
HIGH VOLTAGE SWITCHING DIODES
3
BAS19
BAS20
BAS21
Marking Code: HA
Marking Code: HB
Marking Code: HC
1
2
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VR
Value
Unit
V
BAS19
BAS20
BAS21
120
200
250
Continuous Reverse Voltage
Continuous Forward Current
IF
200
625
mA
mA
Peak Forward Surge Current
Total Device Dissipation FR-5 Board 1)
IFM(surge)
O
PD
RθJA
PD
225
1.8
mW
TA=25 C
O
O
mW/ C
Derate above 25 C
O
Thermal Resistance Junction to Ambient
556
C/W
Total Device Dissipation Alumina Substrate 2)
O
300
2.4
mW
TA=25 C
O
O
mW/ C
Derate above 25 C
O
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
RθJA
417
C/W
O
C
TJ ,TS
-55 to +150
O
Characteristics at Tj = 25 C
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 100 mA
at IF = 200 mA
VF
VF
-
-
1
1.25
V
V
Reverse Breakdown Voltage
at IBR = 100 µA
at IBR = 100 µA
BAS19
V(BR)
V(BR)
V(BR)
120
200
250
-
-
-
V
V
V
BAS20
BAS21
at IBR = 100 µA
Reverse Voltage Leakage Current
at VR = 100 V
at VR = 150 V
IR
IR
IR
IR
IR
IR
-
-
-
-
-
-
0.1
0.1
0.1
100
100
100
µA
µA
µA
µA
µA
µA
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
at VR = 200 V
at VR = 100 V, TJ = 150 C
at VR = 150 V, TJ = 150 C
at VR = 200 V, TJ = 150 C
O
O
O
Diode Capacitance
at f = 1 MHz
Cd
trr
5
pF
ns
-
-
Reverse Recovery Time
at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 Ω
50
1) FR-5=1 x 0.75 x 0.062 in.
2) Alumina=0.4 x 0.3 x 0.024in.99.5% alumina.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/12/2005
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