BAT378W [SEMTECH]
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE; 硅外延平面肖特基势垒二极管
| 型号： | BAT378W |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT378W
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
3
1
2
Marking Code: B7
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Symbol
VRM
VR
Value
Unit
V
15
10
200
V
Maximum Peak Forward Current
Surge Forward Current (10 ms)
Average Forward Current
Power Dissipation
IFM
mA
A
IFSM
IO
1
100
mA
mW
Ptot
Tj
100
O
C
Junction Temperature
125
O
Storage Temperature Range
Operating Temperature Range
Ts
-55 to +125
-40 to +100
C
O
C
Topr
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at IF = 5 mA
at IF = 100 mA
VF
-
-
-
-
0.3
0.5
V
Reverse Current
at VR = 10 V
Total Capacitance
at VR = 0 V, f = 1 MHz
IR
-
-
-
20
40
µA
pF
CT
20
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/02/2006
BAT378W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/02/2006
相关型号：
BAT400D-13
Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, PLASTIC PACKAGE-3
DIODES
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