BAV19 [SEMTECH]
SILICON EPITAXIAL PLANAR DIODES; 硅外延平面二极管
| 型号： | BAV19 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR DIODES |
| 文件： | 总4页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV19, BAV20, BAV21
SILICON EPITAXIAL PLANAR DIODES
High Voltage General Purpose Diodes
Max. 0.5
Min. 27.5
Max. 3.9
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Glass Case DO-35
Dimensions in mm
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VRRM
Value
Unit
V
BAV19
BAV20
BAV21
120
200
250
Repetitive Peak Reverse Voltage
BAV19
BAV20
BAV21
100
150
200
Reverse Voltage
VR
V
Continuous Forward Current
IF
250
625
mA
mA
Repetitive Peak Forward Current
IFRM
at t = 1 µs
at t = 100 µs
at t = 1 s
9
3
1
Non-repetitive Peak Forward Surge Current
IFSM
A
Total Power Dissipation
Ptot
RθJA
RθJTP
Tj
500
375
mW
K/W
K/W
Thermal Resistance, Junction to Ambient 1)
Thermal Resistance, Junction to Tie-point 1)
Junction Temperature
240
O
C
175
O
C
Storage Temperature Range
1) Lead length 10 mm
TS
- 65 to + 175
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007
BAV19, BAV20, BAV21
O
Characteristics at Ta = 25 C
Parameter
Symbol
V(BR)R
Min.
Max.
Unit
V
Reverse Breakdown Voltage
at IR = 100 µA
BAV19
BAV20
BAV21
120
200
250
-
-
-
Reverse Current
at VR = 100V
at VR = 150V
at VR = 200V
at VR = 100 V, TA = 150 C
at VR = 150 V, TA = 150 C
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
-
-
-
-
-
-
100
100
100
100
100
100
nA
nA
nA
µA
µA
µA
IR
O
O
O
at VR = 200 V, TA = 150 C
Forward Voltage
at IF = 100 mA
at IF = 200 mA
-
-
1
1.25
VF
V
Diode Capacitance
at f = 1 MHz
Cd
trr
-
-
5
pF
ns
Reverse Recovery Time
at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω
50
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007
BAV19, BAV20, BAV21
Rverse voltage vs. reverse current
325
Reverse current vs. reverse voltage
Ta=25
C
50
40
30
20
Ta=25
C
300
275
10
0
55
115
Reverse voltage, V
3
5
20
Reverse current,
100
95
135
75
155 175 195
10
30
A
50
Forward voltage vs. forward current
C
Reverse current vs. reverse voltage
100
Ta=25
450
Ta=25
C
90
80
400
350
70
60
50
40
30
20
300
250
255
180
220
200
240
1
2
10
Forward current,
100
5
20
A
50
Reverse voltage, V
Forward voltage vs. forward current
C
Forward voltage vs. forward current
C
725
700
1.4
1.3
1.2
Ta=25
Ta=25
650
600
550
500
450
500 800
0.1
0.2
1
10
10
20
100
200
0.5
2
50
5
Forward current, mA
Forward current, mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007
BAV19, BAV20, BAV21
Forward voltage vs. ambient temperature
Capacitance vs. reverse voltage
1.3
1.2
1.1
Ta=25
C
800
600
Ta= -40
C
Ta=25
C
1
0.9
0.8
400
200
Ta=80
C
0
0.001 0.003
2
4
14
15
0.01
1
10
6
0.1
8
10
12
0.3
3
0.03
Forward current, mA
Reverse voltage, V
Reverse recovery time vs.
reverse recovery current
Average rectified current & forward current
vs. ambiebnt temperature
500
50
40
400
300
200
100
30
20
IF=IR=30mA
Rloop=100 Ohms
0
150
1
100
1.5
2
50
2.5
3
Reverse recovery current, mA
Ambient temperature ( C)
Power derating curve
500
400
300
200
100
DO-35 Pkg
SOT-23 Pkg
0
150
200
100
50
Average temperature ( C)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007
相关型号：
BAV19-BP
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
MCC
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