BC307 [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | BC307 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC307…BC308
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
BC307
50
BC308
30
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-VCBO
-VCEO
-VEBO
45
25
V
5
V
-IC
100
500
mA
Ptot
mW
Total Power Dissipation
Junction Temperature
Storage Temperature Range
O
C
Tj
150
O
C
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 2 mA
Current Gain Group
hFE
hFE
hFE
120
180
380
220
460
800
-
-
-
A
B
C
Collector Base Cutoff Current
at -VCB = 50 V
at -VCB = 30 V
BC307
BC308
-
-
15
15
-ICBO
nA
Collector Emitter Breakdown Voltage
at -IC = 2 mA
BC307
BC308
45
25
-
-
-V(BR)CEO
-V(BR)EBO
V
V
Emitter Base Breakdown Voltage
at -IE = 100 µA
5
-
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
at -IC = 100 mA, -IB = 5 mA
-VCE(sat)
-
-
0.3
0.6
V
Base Emitter On Voltage
at -VCE = 5 V, -IC = 2 mA
-VBE(on)
fT
0.55
100
-
0.7
-
V
Current Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
MHz
pF
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
Ccb
6
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
BC307…BC308
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
相关型号：
BC307-A
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
SAMSUNG
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