BC639 [SEMTECH]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | BC639 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总3页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST BC635 / BC637 / BC639
NPN Silicon Epitaxial Planar Transistor
Medium Power Transistors
for driver stages of audio / video amplifiers
1.Emitter 2.Collector 3.Base
TO-92 Plastic Package
Weight approx. 0.19g
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VCBO
Value
Unit
Collector Base Voltage
BC635
BC637
BC639
BC635
BC637
BC639
45
60
100
45
60
V
V
Collector Emitter Voltage
VCEO
80
Emitter Base Voltage
Collector Current
VEBO
IC
ICM
IB
5
V
A
1
1.5
Peak Collector Current
Base Current
A
100
mA
mA
mW
Peak Base Current
Power Dissipation
IBM
Ptot
Tj
200
830
O
C
Junction Temperature
Storage Temperature Range
150
O
C
TS
- 55 to + 150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2007
ST BC635 / BC637 / BC639
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 2 V, IC = 5 mA
at VCE = 2 V, IC = 150 mA
hFE
hFE
hFE
hFE
40
40
40
25
-
-
-
-
-
BC635
BC637 / BC639
250
160
-
at VCE = 2 V, IC = 500 mA
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 5 V
ICBO
IEBO
-
-
100
100
nA
nA
Collector Base Breakdown Voltage
at IC = 100 µA
BC635
BC637
BC639
45
60
100
-
-
-
V(BR)CBO
V
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
BC635
BC637
BC639
45
60
80
-
-
-
V(BR)CEO
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Voltage
V(BR)EBO
VCE(sat)
VBE
5
-
0.5
1
V
V
-
-
V
at VCE = 2 V, IC = 500 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 50 mA, f = 100 MHz
fT
100
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2007
ST BC635 / BC637 / BC639
Static Characteristics
DC Current Gain
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
IB=0.2 mA
Collector Emitter Voltage VCE (V)
Collector Current IC (mA)
Base Emitter On Voltage
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage VBE (V)
C o l l e c t o r C u r r e n t IC( mA)
Collector Output Capacitance
Collector Base Voltage VCB (V)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2007
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