BC818 [SEMTECH]
NPN Silicon Epitaxial Planar Transistors; NPN硅外延平面晶体管
| 型号： | BC818 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistors |
| 文件： | 总2页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817 / BC818
NPN Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier application,
These transistors are subdivided into three groups
–16, -25, -40 according to their current gain.
As complementary types, the PNP transistors
BC807 and BC808 are recommended.
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VCBO
Value
Unit
BC817
BC818
BC817
BC818
50
30
45
25
Collector Base Voltage
V
V
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
IC
5
500
V
Collector Current
mA
mW
K/W
Power Dissipation
Ptot
RθJA
TJ
200
Thermal Resistance , Junction to Ambient
Junction Temperature
500
O
C
150
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
Electrical Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group -16
hFE
hFE
hFE
hFE
100
160
250
40
-
-
-
-
250
400
600
-
-
-
-
-
-25
-40
at VCE = 1 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 20 V
Emitter-Base Cutoff Current
at VEB = 5 V
Collector Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base-Emitter Voltage
at IC = 500 mA, VCE = 1 V
Gain -Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector-Base Capacitance
at VCB = 10 V, f = 1 MHz
ICBO
IEBO
-
-
-
100
100
0.7
1.2
-
nA
nA
V
-
VCEsat
VBE(on)
fT
-
-
-
100
-
-
V
-
MHz
pF
CCBO
5
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/12/2005
BC817 / BC818
Power Dissipation vs Ambient Temperature
300
250
200
150
100
50
0
0
25
100
125
50
75
150
O
Ambient Temperature: Ta ( C)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/12/2005
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