JAN3SF2 [SEMTECH]
Rectifier Diode, 1 Phase, 1 Element, 4.5A, 200V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN;
| 型号： | JAN3SF2 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 4.5A, 200V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN 软恢复二极管 快速软恢复二极管 |
| 文件： | 总5页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5415 THRU 1N5420
3SF05 THRU 3SF6
Axial Leaded Hermetically Sealed
Fast Rectifier Diode
POWER DISCRETES
Description
Features
Quick reference data
u Very low reverse recovery time
u Hermetically sealed non-cavity construction.
u Low switching losses
VR = 50 - 600V
IF = 4.5A
trr = 150 - 400nS
IR = 1.0µA
u Low forward voltage drop
u Soft, non-snap off, recovery characteristics
u Capable of withstanding temperature cycle
conditions from -180°C to +130°C for space
critical programs.
These products are qualified to MIL-PRF-19500/411.
They can be supplied fully released as JAN, JANTX,
JANTXV and JANS versions.
Absolute Maximum Ratings
Electrical specifications @ TA = 25°C unless otherwise specified.
1N5415 1N5416 1N5417
1N5418 1N5419 1N5420
Symbol
3SF05
Units
3SF1
3SF2
3SF4
3SF5
3SF6
Working Reverse Voltage
Repetitive Reverse Voltage
VRWM
VRRM
50
50
100
200
400
500
600
V
V
100
200
400
500
600
Average Forward Current
@ 55°C in free air, lead length
0.375"
IF(AV)
4.5
25
A
A
Repetitive Surge Current
@ 55°C in free air, lead length
0.375"
IFRM
Non-Repetitive Surge Current
(tp = 8.3mS @ VR & TJMAX
)
IFSM
80
A
(tp = 8.3mS, @ VR & 25°C)
150
Storage Temperature Range
TSTG
-65 to +175
°C
Revision: September, 2010
1
www.semtech.com
1N5415 THRU 1N5420
3SF05 THRU 3SF6
POWER DISCRETES
Electrical Specifications
Symbol 1N5415 1N5416 1N5417 1N5418 1N5419 1N5420 Units
3SF05
3SF1
3SF2
3SF4
3SF5
3SF6
Average Forward Current max.
for sine wave, TA = 55°C
IF(AV)
3.0
A
Average Forward Current max.
(TL= 55°C; L = 3/8")
for sine wave
IF(AV)
IF(AV)
4.4
4.5
A
for square wave
I2t for fusing (t = 8.3mS) max
I2t
90
A2S
V
Forward Voltage Drop max.
@ IF = 3.0A, T = 25°C
VF
1.1
j
Reverse Current max.
@ VRWM, Tj = 25°C
@ VRWM, Tj = 100°C
IR
IR
1.0
20
µA
Reverse Recovery Time max.
0.5A IF to 1.0A IRM recovers to 0.25A
IRM(REC)
trr
Cj
150
550
150
430
150
250
150
165
250
140
400
120
nS
pF
Junction Capacitance typ.
@ VR = 4V, f = 1MHz
Thermal Characteristics
1N5415 1N5416 1N5417 1N5418 1N5419 1N5420
3SF05 3SF1 3SF2 3SF4 3SF5 3SF6
Symbol
Units
Thermal Resistance-Junction to Lead
Lead length = 0.375"
Lead length = 0.0"
Rθ JL
Rθ JL
20
4
°C/W
Thermal Resistance-Junction to
Ambient on 0.06" thick pcb. 1 oz.
copper
Rθ JA
75
°C/W
Application Note
These diodes are capable of withstanding 20 cycles of Temperature Cycling from -180°C to +130°C for
for Space Critical Programs. Semtech is also able to offer this test condition as a 100% Screening
Option. A full Summary Data Report is available on request. Please consult the factory for details.
www.semtech.com
2010 Semtech Corp.
2
1N5415 THRU 1N5420
3SF05 THRU 3SF6
POWER DISCRETES
Typical Characteristics
www.semtech.com
2010 Semtech Corp.
3
1N5415 THRU 1N5420
3SF05 THRU 3SF6
POWER DISCRETES
Typical Characteristics
www.semtech.com
2010 Semtech Corp.
4
1N5415 THRU 1N5420
3SF05 THRU 3SF6
POWER DISCRETES
Ordering Information
Part Number
Description
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
3SF05
3SF1
3SF2
3SF4
3SF5
3SF6
Axial leaded hermetically sealed(1)
Note:
(1) Available in bulk and tape and reel packaging. Please
consult factory for quantities.
Outline Drawing
G4
Dimensions
Millimeters
Inches
MIN
Note
DIMN
MAX
0.18
1.3
MIN
3.43
22.9
3.3
MAX
4.57
33.0
4.32
1.27
1.07
A
B
C
D
E
0.135
0.9
-
-
0.13
-
0.17
0.05
0.042
-
-
1
-
0.036
0.91
Note:
(1) Lead diameter uncontrolled over this region.
Weight = 0.04oz
Contact Information
Semtech Corporation
Power Discretes Products Division
200 Flynn Road, Camarillo, CA93012
Phone: (805)498-2111 FAX (805)498-3804
www.semtech.com
2010 Semtech Corp.
5
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