JANTXV1N6103A [SEMTECH]

Trans Voltage Suppressor Diode, 500W, 5.7V V(RWM), Bidirectional, 1 Element, Silicon;


型号：	JANTXV1N6103A
厂家：	SEMTECH CORPORATION
描述：	Trans Voltage Suppressor Diode, 500W, 5.7V V(RWM), Bidirectional, 1 Element, Silicon 局域网二极管
文件：	总20页 (文件大小：162K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 23 October 1999.

INCH-POUND

MIL-PRF-19500/516D

23 July 1999

SUPERSEDING

MIL-S-19500/516C

20 January 1995

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE

SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A,

1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A,

1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS,

1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS,

JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS

This specification is approved for use within US Army Laboratory

Command, Department of the Army, and is available for use by all

Departments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient

voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.

1.2 Physical dimensions. See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein.

1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:

2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at T = +25°C (see figure 5

for derating).

3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at T = +75°C for L = 0.375

inch (9.53 mm) (see figure 6).

500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including

A and US suffix versions)) at t = 1 ms (see figure 7).

-55°C £ T

£ +175°C, -55°C £ T

£ +175°C (ambient temperatures).

STG

1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2 and 4 of table II herein.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,

Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing

at the end of this document or by letter.

AMSC N/A

FSC 5961

Distribution Statement A. Approved for public release; distribution is unlimited.

MIL-PRF-19500/516D

Dimensions

1N6102 through 1N6137

1N6102A through 1N6137A

Inches Millimeters

1N6138 through 1N6173

1N6138A through 1N 6173A

Ltr.

Inches

Min

Millimeters

Notes

Min

Max

.140

.185

.033

1.30

.030

Min

Max

3.56

4.70

0.84

33.02

0.76

Max

.185

.195

.042

1.30

.030

Min

Max

4.70

4.95

1.07

33.02

0.76

.085

.140

.026

1.00

2.16

3.56

0.66

25.4

.135

.140

.036

1.00

3.43

3.56

0.92

25.4

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. Dimension BD shall be measured at the largest diameter.

4. Dimension L lead diameter uncontrolled in this area.

5. Symbol for internal construction of a bipolar transient suppressor.

FIGURE 1. Semiconductor device, diode, types 1N6102 through 1N6173

and 1N6102A through 1N6173A.

MIL-PRF-19500/516D

Dimensions

D-5B

D-5DC

1N6102US through 1N6137US,

1N6102AUS through 1N6137AUS

1N6138US through 1N6173US

1N6138AUS through 1N6173AUS

Ltr.

Inches

Max

Millimeters

Inches

Min

.183

.205

.019

.003

Millimeters

Notes

Min

.137

.200

.019

.003

Min

Max

3.76

5.72

0.71

Max

.202

.245

.028

Min

Max

5.13

6.22

0.71

ECT

.148

.225

.028

3.48

5.08

0.48

0.80

4.65

5.21

0.48

0.80

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. In accordance with ANSI Y14.5M, diameters are equivalent to f x symbology.

Minimum clearance of glass body to mounting surface on all orientations.

FIGURE 2. Semiconductor device, diode 1N6102US through 1N6173US, 1N6102AUS through 1N6173AUS.

MIL-PRF-19500/516D

A - version

Dimensions

Ltr

1N6103 through 1N6137

1N6103A through 1N6137A

Inches Millimeters

Min

1N6139 through 1N6173

1N6139A through 1N6173A

Millimeters Inches

Inches

Min

.124

.030

Millimeters

Max

.093

.040

Min

Max

2.36

1.02

Max

.130

.040

Min

3.15

0.76

Max

3.30

1.02

.087

.030

2.21

0.76

f A

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are for general information only.

3. Silver plate 250 microinches nominal on all surfaces of three discs.

FIGURE 3. Physical dimensions, JANHC and JANKC die (A-version), 1N6102

through 1N6173, 1N6102A through 1N6173A.

MIL-PRF-19500/516D

B - version

Dimensions

Ltr

1N6103 through 1N6137

1N6103A through 1N6137A

Inches Millimeters

Min

1N6139 through 1N6173

1N6139A through 1N6173A

Millimeters Inches

Inches

Min

.124

.110

Millimeters

Max

.093

.120

Min

Max

2.36

3.05

Max

.130

.120

Min

3.15

2.79

Max

3.30

3.05

.087

.110

2.21

2.79

f A

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are for general information only.

3. Silver thickness 120 microinches nominal on all discs.

FIGURE 4. Physical dimensions, JANHC and JANKC die (B-version), 1N6102

through 1N6173, 1N6102A through 1N6173A.

MIL-PRF-19500/516D

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not

include documents cited in other sections of this specification or recommended for additional information or as examples. While

every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified

requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this

document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of

the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see

6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500

STANDARD

MILITARY

MIL-STD-750

- Semiconductor Devices, General Specification for.

Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense

Automated Printing Service, Building 4D (NPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for

related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,

however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified

herein.

3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-

PRF-19500.

(max) .........Maximum clamping voltage. The maximum peak voltage appearing across the device when subjected to the

peak pulse current I .

...............Reverse breakdown current at the specified condition.

................Reverse peak pulse power.

(BR)

a V

............Temperature coefficient of V

(BR)

3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified

in MIL-PRF-19500 and herein.

3.3.1 Metallurgical bond construction. Metallurgically bonded construction is required. The silicon die shall be metallurgically

bonded to both terminal pins. The silicon die attach material shall have a solidus point ³ +350°C (i.e., must exhibit some

mechanical strength up to +350°C).

3.3.2 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and as specified herein. Where a

choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.4.1 Marking of US version devices. For US version devices only, all marking (except polarity) may be omitted from the body,

but shall be retained on the initial container.

MIL-PRF-19500/516D

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as

specified in 1.3, 1.4, table I, and table II.

3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in tables I and II.

3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for

listing on the applicable qualified products list before contract award (see 4.2 and 6.4).

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3)

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein. A

separate qualification shall be required for the 500-watt and 1,500-watt peak pulse power device, respectively.

4.2.1 JANHC and JANKC die. JANHC and JANKC die shall be qualified in accordance with MIL-PRF-19500.

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and

as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of

table I herein shall not be acceptable.

Screen (see

table IV of MIL-

PRF-19500

Measurement

JANS level

JANTX and JANTXV levels

Not applicable

See 4.5.1

Not applicable

See 4.5.1

Interim electrical, delta, and group A, subgroup 2,

electrical parameters not applicable for this screen

(performed in screen 12).

Interim electrical, delta, and group A, subgroup 2,

electrical parameters not applicable for this screen

(performed in screen 12).

4.3.1 Screening (JANHC and JANKC die). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500.

As a minimum, die shall be 100-percent probed in accordance with group A, subgroup 2.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. A

separate quality conformance inspection shall be required for the 500-watt and 1,500-watt peak pulse power devices, respectively.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup

testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements

(end-points) and delta requirements shall be performed twice (once in each direction), in accordance with group A, subgroup 2.

4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.

Subgroup Method

Condition

Not applicable.

1027

= +100°C minimum (see 4.5.2 and 4.5.3)

MIL-PRF-19500/516D

4.4.2.1 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup Method

Condition

(See 4.5.1).

Not applicable.

1027

Delta limits: DI

£ 100 percent of initial reading or 20 percent of column 5, whichever is greater;

£ 5 percent of initial value.

(BR)

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing

in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be performed twice (once in each

direction), in accordance with group A, subgroup 2.

Subgroup Method

Condition

2036

lead tension: Test condition A, weight = 5 pounds, t = 15 ± 3 £. Lead fatigue: Test condition E,

weight = 2 pounds (Not applicable to "US" suffix devices).

1026

4071

1 ms pulse only (see 4.5.1 and 4.5.3).

= column 3 of table II, T = +25°C ± 3°C, T = T +100°C; sampling plan shall be 45

(BR)

devices, c = 0; a V

= column 8 of table II.

(BR)

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Power burn-in and steady-state operation life test conditions. For the purposes of this test, the direction in which the device

is first pulsed shall be considered polarity A and the reverse direction polarity B. The test conditions and order of events shall be as

follows:

a. Pulse in accordance with 4.5.3, in polarity A 5 times (screening and group B) and 50 times (group C) at T = +25°C.

b. Pulse in accordance with 4.5.3, in polarity B 5 times (screening and group B) and 50 times (group C) at T = +25°C.

c. Read and record I

failures.

and V in polarities A and B at T = +25°C, remove defective devices and record number of

(BR)1 A

d. Apply the working peak reverse voltage (V

) (column 4 of table II) in polarity A at T = +125°C as follows:

RWM

(1)

(2)

48 hours (JANTX and JANTXV) and 120 hours (JANS) for the screening test.

170 hours (JAN, JANTX, and JANTXV) for group B steady-state operation life test.

500 hours for group C steady-state operation life test.

(3)

e. Read I

in polarity A at T = +25°C. Devices with DI > 50 percent (100 percent for steady-state operation life) of the

initial reading or 20 percent of column 5, table II, whichever is greater, shall be considered defective. Remove defective

devices and record the number of failures.

Apply the working peak pulse reverse voltage (V

) (column 4 of table II in polarity B at T = +125°C as follows:

RWM

(1)

(2)

(3)

48 hours (JANTX and JANTXV) and 120 hours (JANS) for the screening test.

170 hours (JAN, JANTX, and JANTXV) for group B steady-state operation life test.

500 hours for group C steady-state operation life test.

g. Read I

in polarity B at T = +25°C. Devices with DI > 50 percent (100 percent for steady-state operation life) of the

initial reading or 20 percent of column 5, table II, whichever is greater, shall be considered defective. Remove defective

devices and record the number of failures.

MIL-PRF-19500/516D

4.5.1 Power burn-in and steady-state operation life test conditions - continued.

h. Read V

in polarities A and B at T = +25°C. Devices with DV

> ±2 percent (±5 percent for steady-state

BR1

(BR)1

operation life) of the initial reading shall be considered defective. Remove defective devices and record the number of

failures.

Read I in polarity A at T = +25°C, remove defective devices and record the number of failures.

R1 A

4.5.1.1 Group C steady-state operation life test (alternate procedure). When the group B 340-hour life test is continued on test to

1,000 hours to satisfy the group C life test requirements, the test shall be performed as given in 4.5.1 with the following exceptions:

a. 4.5.1 steps a and b shall be moved and performed following step g.

b. 4.5.1 steps e and g shall be repeated after steps a and b are performed and before step h is completed (step i may be

omitted when this procedure is used).

4.5.2 Accelerated steady-state operation life. This test shall be conducted with the devices subjected to the breakdown current

specified in column 3 of table II in opposite polarities for 48 +8, -4 hours in each polarity. At the beginning of the test and at the end

of each time period, the devices shall be temperature stabilized at T = +25°C and subjected to pulse conditions at the rate of one

pulse per minute (max) for 10 pulses each in accordance with 4.5.3 as specified.

4.5.3 Maximum peak pulse current (I ). The peak pulse currents specified in column 7 of table II shall be applied simultaneously

maintaining a bias voltage, not less than the applicable voltage in column 4 of table II, in the same polarity as the peak pulse

current. The peak pulse current shall be applied with a current versus time waveform (1 pulse per minute maximum) such that the

pulse current shall reach 100 percent of I at t £ 10 ms and decay to 50 percent of I at t ³ 1 ms for t = 1 ms (see figure 8).

NOTE: Tolerance on time (t) shall be -0 +10 percent.

4.5.4 Clamping voltage. The peak pulse clamping voltage shall be measured across the diode in a 1 ms time interval. The

response detector shall demonstrate equipment accuracy of ±3 percent.

4.5.5 Lot accumulation. Lot accumulation period shall be six months in lieu of six weeks

MIL-PRF-19500/516D

TABLE I. Group A inspection .

Inspection

MIL-STD-750

Conditions

Limit

Unit

Symbol

Method

2071

Min

Max

Subgroup 1

Visual and mechanical

examination

Subgroup 2 2/

Reverse current

leakage

4016

4022

DC method, V = V

RWM

(column 4 of table II herein.)

Column

5 of table

mA dc

Breakdown voltage

Column 2

of table II

V dc

£ 300 ms, duty cycle £ 2 percent

(BR)1

= column 3 of table II

(BR)

Subgroup 3 2/

High temperature

operation

= +150°C

Reverse current

leakage

4016

DC method, V = V

RWM

(column 4 of table II herein.)

Column

9 of table

mA dc

Subgroup 4 2/

Clamping voltage

maximum (pulsed)

= 1 ms (see 4.5.3 and 4.5.4), I

Column

6 of table

V (pk)

C(MAX)

column 7 of table II.

Subgroups 5 and 6

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

2/ All electrical testing shall be performed twice, once in each direction.

TABLE II. Electrical characteristics for 500 W and 1,500 W series diodes (limits apply in both directions).

Column 1

Series type

Column 2

Breakdown

voltage

Column 3

Test

current

Column 4

Working

peak

reverse

voltage

Column 5

Maximum

reverse current

Column 6

Maximum

clamping

voltage

Column 7

Maximum peak pulse

Column 8

Maximum

temp. Coeff. of

Column 9

Maximum reverse

current at

current I

(BR)1

(BR)

= +150°C

(BR)

(max) at I

a V

(BR)

(BR) 1/

RWM

V dc

= 1 ms 1/

V (PK)

500 W

1N6102

1,500 W

1N6138

Min V dc

mA dc

500 W 2/

A (PK)

1,500 W 3/

A (PK)

500 W 2/

mA dc

4,000

750

500

300

1,500 W

3/ mA dc

12,000

3,000

2,000

1,200

800

mA dc

%/°C

6.12

6.46

6.75

7.13

7.38

7.79

8.19

8.65

9.00

9.50

9.90

10.45

10.80

11.40

175

150

125

100

5.2

5.7

6.2

6.9

7.6

8.4

9.1

100

500

300

100

11.0

10.5

11.8

11.2

12.7

12.1

14.0

13.4

15.2

14.5

16.3

15.6

17.7

16.9

45.4

47.6

42.4

44.6

39.4

41.3

35.7

37.3

32.9

34.5

30.7

32.0

28.2

29.6

136.4

142.8

127.1

133.9

118.1

124.0

107.1

111.9

98.7

103.4

92.0

96.2

84.7

88.8

.05

.06

.07

1N6102A 1N6138A

1N6103 1N6139

1N6103A 1N6139A

1N6104 1N6140

1N6104A 1N6140A

1N6105 1N6141

1N6105A 1N6141A

1N6106 1N6142

1N6106A 1N6142A

1N6107 1N6143

1N6107A 1N6143A

1N6108 1N6144

1N6108A 1N6144A

300

200

800

200

800

200

800

150

600

150

600

1N6109

1N6145

11.70

12.35

100

9.9

19.0

18.2

26.3

27.5

78.9

82.4

.08

150

600

1N6109A 1N6145A

1N6110 1N6146

1N6110A 1N6146A

1N6111 1N6147

1N6111A 1N6147A

1N6112 1N6148

1N6112A 1N6148A

1N6113 1N6149

1N6113A 1N6149A

1N6114 1N6150

1N6114A 1N6150A

1N6115 1N6151

1N6115A 1N6151A

1N6116 1N6152

1N6116A 1N6152A

13.50

14.25

14.40

15.20

16.20

17.10

18.00

19.00

19.8

20.9

21.6

22.8

24.3

11.4

12.2

13.7

15.2

16.7

18.2

20.6

21.9

21.0

23.4

22.3

26.3

25.1

29.0

27.7

31.9

30.5

34.8

33.3

39.2

37.4

22.8

23.8

21.4

22.4

19.0

19.9

17.2

18.0

15.7

16.4

14.4

15.0

12.8

13.4

68.5

71.4

64.1

67.3

57.0

59.8

51.7

54.2

47.0

49.2

43.1

45.0

38.3

40.1

.08

100

400

.08

.085

.09

25.7

See footnotes at end of table.

TABLE II. Electrical characteristics for 500 W and 1,500 W series diodes (limits apply in both directions).

Column 1

Column 2

Column

Column 4

Column 5

Column 6

Column 7

Column 8

Column 9

Series type

Breakdown

voltage

Test

current

Working

peak

reverse

voltage

Maximum

reverse current

Maximum

clamping

voltage

Maximum peak pulse

Maximum

temp. Coeff. of

Maximum reverse

current at

current I

(BR)1

(BR)

= +150°C

(BR)

(max) at I

a V

(BR)

(BR) 1/

RWM

V dc

= 1 ms 1/

V (PK)

500 W

1N6117

1,500 W

1N6153

Min V dc

mA dc

500 W 2/

A (PK)

1,500 W 3/

A (PK)

500 W 2/

mA dc

100

1,500 W

3/ mA dc

400

mA dc

%/°C

27.0

28.5

29.7

31.4

32.4

34.2

35.1

37.1

38.7

40.9

42.3

44.7

45.9

48.5

50.4

53.2

55.8

58.9

61.2

64.6

67.5

71.3

73.8

77.9

81.9

86.5

90.0

95.0

99.0

104.5

22.8

25.1

27.4

29.7

32.7

35.8

38.8

42.6

47.1

51.7

56.0

62.2

69.2

76.0

83.6

43.6

41.6

47.9

45.7

52.3

49.9

56.2

53.6

62.0

59.1

67.7

64.6

73.5

70.1

80.7

77.0

89.3

85.3

98.0

97.1

108.1

103.1

118.2

112.8

131.1

125.1

144.1

137.6

158.5

151.3

11.5

12.0

10.4

10.9

9.6

10.0

8.9

9.3

8.1

8.5

7.4

7.7

6.8

7.1

6.2

6.5

5.6

5.9

5.1

4.6

4.8

4.2

4.4

3.8

4.0

3.5

3.6

3.2

3.3

34.4

36.0

31.3

32.8

28.7

30.1

26.7

28.0

24.2

25.4

22.2

23.2

20.4

21.4

18.6

19.5

16.8

17.6

15.3

15.4

13.9

14.5

12.7

13.3

11.4

12.0

10.4

10.9

9.5

.09

1N6117A 1N6153A

1N6118 1N6154

1N6118A 1N6154A

1N6119 1N6155

1N6119A 1N6155A

1N6120 1N6156

1N6120A 1N6156A

1N6121 1N6157

1N6121A 1N6157A

1N6122 1N6158

1N6122A 1N6158A

1N6123 1N6159

1N6123A 1N6159A

1N6124 1N6160

1N6124A 1N6160A

1N6125 1N6161

1N6125A 1N6161A

1N6126 1N6162

1N6126A 1N6162A

1N6127 1N6163

1N6127A 1N6163A

1N6128 1N6164

1N6128A 1N6164A

1N6129 1N6165

1N6129A 1N6165A

1N6130 1N6166

1N6130A 1N6166A

1N6131 1N6167

1N6131A 1N6167A

.095

.100

9.9

See footnotes at end of table.

TABLE II. Electrical characteristics for 500 W and 1,500 W series diodes (limits apply in both directions).

Column 1

Series type

Column 2

Breakdown

voltage

Column 3

Test

current

Column 4

Working

peak

reverse

voltage

Column 5

Maximum

reverse current

Column 6

Maximum

clamping

voltage

Column 7

Maximum peak pulse

Column 8

Maximum

temp. Coeff. of

Column 9

Maximum reverse

current at

current I

(BR)1

(BR)

= +150°C

(BR)

(max) at I

a V

(BR)

(BR) 1/

RWM

V dc

= 1 ms 1/

V (PK)

500 W

1N6132

1,500 W

1N6168

Min V dc

mA dc

500 W 2/

A (PK)

2.9

1,500 W 3/

A (PK)

8.7

500 W 2/

mA dc

100

1,500 W

3/ mA dc

400

mA dc

%/°C

108.0

114.0

117.0

123.5

135.0

142.5

144

152

162

171

180

91.2

98.8

172.9

165.1

187.3

178.8

216.2

206.3

228.8

218.4

257.4

245.7

286.0

273.0

.100

.105

.110

1N6132A 1N6168A

1N6133 1N6169

1N6133A 1N6169A

1N6134 1N6170

1N6134A 1N6170A

1N6135 1N6171

1N6135A 1N6171A

1N6136 1N6172

1N6136A 1N6172A

1N6137 1N6173

1N6137A 1N6173A

3.0

2.7

2.8

2.3

2.4

2.2

2.3

1.9

9.1

8.0

8.4

6.9

7.3

6.6

6.9

5.8

100

400

100

400

98.8

100

400

114.0

121.6

136.8

152.0

100

400

100

400

100

400

100

400

100

400

2.0

1.7

1.8

6.1

5.2

5.5

100

400

100

400

190

100

400

1/ Applies to both 500 W and 1,500 W series.

2/ Applies to only 500 W series.

3/ Applies to only 1,500 W series.

MIL-PRF-19500/516D

FIGURE 5. Steady-state derating curve for free-air mounting (not applicable to JANHC/JANKC die).

MIL-PRF-19500/516D

QJL

Inches

C/W

Inches

C/W

0.000

0.125

0.250

0.375

0.500

0.750

(0.00)

(3.17)

(6.35)

(9.53)

(12.70)

(19.05)

8.3

0.000

0.125

0.250

0.375

0.500

0.750

(0.00)

(3.17)

(6.35)

(9.53)

(12.70)

(19.05)

17.5

26.5

33.5

42.0

55.0

FIGURE 6. Maximum power versus lead temperature (not applicable to JANHC/JANKC die).

MIL-PRF-19500/516D

FIGURE 7. Peak pulse power versus pulse time.

FIGURE 8. Pulse waveform.

MIL-PRF-19500/516D

The pulse derating curve of maximum peak pulse power versus junction temperature has been included for reference purposes

only.

FIGURE 9. Pulse derating curve (not applicable to JANHC/JANKC die)

MIL-PRF-19500/516D

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2).

When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible

packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control

Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command.

Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-

ROM products, or by contacting the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see

2.2.1).

b. Lead finish (see 3.3.2).

c. For die acquisition, the JANC letter version should be specified (see figures 3 and 4).

d. Product assurance level and type designation.

e. Packaging requirements (see 5.1).

6.3 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example,

JANHCA1N6102) will be identified on the QPL.

JANHC and JANKC ordering information 1/

Manufacturer CAGE

14099

14552

1N6102

through

1N6137

JANHCA1N6102

through

JANHCA1N6137

JANHCB1N6102

through

JANHCB1N6137

1N6138

through

1N6173

JANHCA1N6138

through

JANHCA1N6173

JANHCB1N6138

through

JANHCB1N6173

1/ Applies to "A" suffix versions also.

2/ For JANKC level, replace "JANHC" prefix with "JANKC"

6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of

award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually

been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange

to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible

to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of

products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.

MIL-PRF-19500/516D

6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous

issue due to the extent of the changes.

CONCLUDING MATERIAL

Custodians:

Army - CR

Navy - EC

Air Force - 11

NASA - NA

DLA - CC

Preparing activity:

DLA - CC

(Project 5961-2175)

MIL-PRF-19500/516D

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on

current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced

document(s) or to amend contractual requirements.

1. DOCUMENT NUMBER

MIL-PRF-19500/516D

2. DOCUMENT DATE

99/07/23

I RECOMMEND A CHANGE:

3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,

TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH

1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US,

1N6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial)

b. ORGANIZATION

c. ADDRESS (Include Zip Code)

d. TELEPHONE (Include Area Code)

7. DATE SUBMITTED

Commercial

DSN

FAX

8. PREPARING ACTIVITY

b. TELEPHONE

Commercial

614-692-0510

a. Point of Contact

Alan Barone

DSN

FAX

850-0510

614-692-6939

alan_barone@dscc.dla.mil

c. ADDRESS

Defense Supply Center Columbus

ATTN: DSCC-VAC

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC -LM)

8725 John J. Kingman Road, Suite 2533

Columbus, OH 43216-5000

Fort Belvior, Virginia 22060-6221

Telephone (703) 767-6888 DSN 427-6888

DD FORM 1426, FEB 99 (EG)

PREVIOUS EDITIONS ARE OBSOLETE

WHS/DIOR, Feb 99

JANTXV1N6103A [SEMTECH]

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