JANTXV3SM4 [SEMTECH]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon,;
| 型号： | JANTXV3SM4 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, |
| 文件： | 总4页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5550 THRU 1N5554
3SM2 THRU 3SM0
Axial Leaded Hermetically Sealed
Standard Recovery Rectifier Diode
POWER DISCRETES
Description
Features
Quick reference data
Low reverse leakage current
Hermetically sealed in fused metal oxide
Good thermal shock resistance
Low forward voltage drop
VR = 200 - 1000V
IF
5.0A
=
trr = 2µS
VF = 1.0V
Avalanche capability
These products are qualified to MIL-PRF-19500/420.
They can be supplied fully released as JAN, JANTX,
JANTXV, and JANS versions.
Absolute Maximum Ratings
Electrical specifications @ TA = 25°C unless otherwise specified.
1N5550
1N5551
3SM4
1N5552
3SM6
1N5553
3SM8
1N5554
3SM0
Symbol
Units
3SM2
Working Reverse Voltage
VRWM
200
400
600
800
1000
V
Average Forward Current
@ 55°C in free air, lead length
0.375"
IF(AV)
5.0
A
A
Repetitive Surge Current
@ 55°C in free air, lead length
0.375"
IFRM
25
Non-Repetitive Surge Current
(tp = 8.3mS @ VR & TJMAX
)
IFSM
100
150
A
(tp = 8.3mS, @ VR & 25°C)
Storage Temperature Range
TSTG
-65 to +175
°C
Revision: September 22, 2008
1
www.semtech.com
1N5550 THRU 1N5554
3SM2 THRU 3SM0
POWER DISCRETES
Electrical Specifications
Symbol 1N5550 1N5551 1N5552 1N5553
1N5554
3SM0
Units
3SM2
3SM4
3SM6
3SM8
Average Forward Current (sine wave)
- max. T = 55°C
IF(AV)
IF(AV)
I2t
3.0
5.0
A
A2S
V
- max. LA= 3/8"; TL = 55°C
I2t for fusing (t = 8.3mS) max
42
Forward Voltage Drop max.
@ IF = 3.0A, T = 25°C
VF
1.0
j
Reverse Current max.
@ V , Tj = 25°C
@ VRRWWMM, Tj = 125°C
I
1.0
60
µA
IRR
Reverse Recovery Time max.
trr
Cj
2.0
92
µS
pF
0.5A IF to 1.0A IRM recovers to 0.25A IRM(REC)
Junction Capacitance typ.
@ VR = 5V, f = 1MHz
Thermal Characteristics
1N5550 1N5551 1N5552 1N5553 1N5554
Symbol
Units
3SM2
3SM4
3SM6
3SM8
3SM0
Thermal Resistance-Junction to Lead
Lead length = 0.375"
Rθ JL
Rθ JL
22
4
°C/W
Lead length = 0.0"
Thermal Resistance-Junction to
Ambient on 0.06" thick pcb. 1 oz.
copper
Rθ JA
47
°C/W
Typical Characteristics
Fig 1. Typical junction capacitance as a function of reverse voltage.
www.semtech.com
2008 Semtech Corp.
2
1N5550 THRU 1N5554
3SM2 THRU 3SM0
POWER DISCRETES
Typical Characteristics
Fig 2. Forward voltage drop as a function of forward current
Fig 3. Maximum power versus lead temperature
Fig 4. Forward power dissipation as a function of forward
current, for sinusoidal operation.
Fig 5. Maximum ratings for capacitive loads.
www.semtech.com
2008 Semtech Corp.
3
1N5550 THRU 1N5554
3SM2 THRU 3SM0
POWER DISCRETES
Ordering Information
Part Number
Description
1N5550
1N5551
1N5552
1N5553
1N5554
Axial leaded hermetically sealed(1)
3SM2
3SM4
3SM6
3SM8
3SM0
Note:
(1) Available in bulk and tape and reel packaging. Please
consult factory for quantities.
Outline Drawing
G4
Dimensions
Millimeters
Inches
MIN
Note
DIMN
MAX
0.18
1.3
MIN
2.92
22.86
3.3
MAX
4.57
33.02
7.62
0.8
A
B
C
D
E
0.115
0.9
-
-
0.13
-
0.3
-
0.03
0.042
-
1
-
0.036
0.92
1.07
Note:
(1) Lead diameter uncontrolled over this region.
Weight = 0.039oz
Contact Information
Semtech Corporation
Power Discretes Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
www.semtech.com
2008 Semtech Corp.
4
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