LL916 [SEMTECH]
HIGH CONDUCTANCE FAST DIODES; 高电导快速二极管
| 型号： | LL916 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | HIGH CONDUCTANCE FAST DIODES |
| 文件： | 总4页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LL916, LL916A, LL916B
HIGH CONDUCTANCE FAST DIODES
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
75
Unit
V
Working Inverse Voltage
Average Rectified Current
DC Forward Current
WIV
IO
IF
200
300
400
mA
mA
mA
Recurrent Peak Forward Current
if
Peak Forward Surge Current
Pulse width = 1 second
if(surge)
if(surge)
1
4
A
A
Pulse width = 1 microsecond
Total Device Dissipation
Derate above 25oC
500
mW
mW/oC
PD
3.33
Thermal Resistance, Junction to Ambient
Junction Temperature
300
175
oC/W
OC
RθJA
Tj
Storage Temperature Range
TS
-65 to +200
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/04/2002
LL916, LL916A, LL916B
Characteristics at TA = 25oC
Symbol
Min.
Typ.
Max.
Unit
Breakdown Voltage
at IR = 100μA
-
-
V
V
BV
BV
100
75
-
-
at IR = 5μA
Reverse Current
at VR = 20V
at VR = 20V, TA = 150oC
25
50
5
nA
μA
μA
IR
IR
IR
-
-
-
-
-
-
at VR = 75V
Forward Voltage
at IF = 5mA
730
1
mV
V
LL916B
LL916
VF
VF
VF
VF
630
-
-
-
-
at IF = 10mA
at IF = 20mA
at IF = 30mA
-
-
-
1
V
LL916A
LL916B
1
V
Diode Capacitance
at f = 1MHz
CO
trr
-
-
-
-
2
4
pF
ns
Reverse Recovery Time
at IF = 10mA, VR = 6V(60mA),
IRR = 1.0mA, RL = 100Ω
Notes:(1) These ratings are based on a maximum junction temperature of 200 degrees C.
(2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/04/2002
LL916, LL916A, LL916B
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV-1.0 to 100 uA
REVERSE CURRENT vs REVERSE VOLTAGE
IR-10 to 100 V
160
120
100
80
Ta=25oC
Ta=25oC
150
140
130
60
40
20
120
110
0
20
VR-REVERSE VOLTAGE (V)
30
50
70
100
10
1
2
3
5
10
20 30 50
100
IR-REVERSE CURRENT (uA)
GENERAL RULE:The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF-1 to 100 uA
FORWARD VOLTAGE vs FORWARD CURRENT
VF-0.1 to 100 mA
550
750
Ta=25oC
Ta=25oC
700
500
450
400
650
600
350
550
300
250
500
450
1
2
3
5
10
20 30 50
100
0.1
0.2 0.3 0.5
1
2
3
5
10
IF-FORWARD CURRENT (uA)
IF-FORWARD CURRENT (mA)
FORWARD VOLTAGE vs
AMBIENT TEMPERATURE
VF-0.01 - 20 mA (-40 to+65 Deg C)
FORWARD VOLTAGE vs FORWARD CURRENT
VF-10 to 800 mA
1.6
900
800
700
Ta=25oC
1.4
Typical
Ta=-40oC
1.2
1
Ta=+25o C
Ta=+65o C
600
500
400
300
0.8
0.6
10
20 30
50
100
200 300 500
0.01 0.03
0.1
0.3
1
3
10
IF-FORWARD CURRENT (mA)
IF-FORWARD CURRENT (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/04/2002
LL916, LL916A, LL916B
Typical Characteristics
CAPACITANCE vs REVERSE VOLTAGE
VR=0.0 to 15 V
REVERSE RECOVERY TIME vs
REVERSE CURRENT
0.9
4
Ta=25oC
Ta=25oC
3.5
0.85
0.8
3
2.5
2
1.5
1
0.75
0
2
4
6
8
10
12 14
10
20
30
40
50
60
REVERSE CURRENT (mA)
IF=10mA-IRR=1.0mA-Rloop=100 Ohms
REVERSE VOLTAGE (V)
Average Rectified Current (Io) &
Forward Current (IF) versus
Ambient Temperature (TA)
POWER DERATING CURVE
500
400
300
DO-35
500
400
300
200
SOT-23
200
100
0
100
0
0
50
100
150
0
50
100
150
150
TA-AMBIENT TEMPERATURE (o C)
IO-AVERAGE TEMPERATURE (oC)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/04/2002
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