MA700B [SEMTECH]
SILICON SCHOTTKY BARRIER DIODE; 硅肖特基二极管
| 型号： | MA700B |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON SCHOTTKY BARRIER DIODE |
| 文件： | 总1页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA700B
SILICON SCHOTTKY BARRIER DIODE
Max. 0.45
Min. 27.5
Max. 2.9
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
XXX
Glass Case DO-34
Dimensions in mm
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VR
Value
Unit
V
Reverse Voltage
20
400 1)
Power Dissipation
Ptot
mW
A
Peak Surge Curent (Single Cycle 60 Hz Sine Wave)
Junction Temperature
IFSM
Tj
15
O
C
125
O
C
Storage Temperature Range
TS
- 55 to + 175
1) Valid provided that electrodes are kept at ambient temperature.
O
Characteristics at Ta = 25 C
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 90 mA
VF
IR
-
1
30
-
V
Reverse Leakage Current
at VR = 20 V
-
μA
pF
ns
Junction Capacitance
at VR = 0 V, f = 1 MHz
Ctot
trr
50
10
Reverse Recovery Time
at IF = IR = 5 mA to 200 mA , recover to 0.1 IR
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/06/2007
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