MMBD202CCW [SEMTECH]
SILICON EPITAXIAL PLANAR SWITCHING DIODE; 硅外延平面开关二极管
| 型号： | MMBD202CCW |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR SWITCHING DIODE |
| 文件： | 总2页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD202CCW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Application
3
• Ultra high speed switching
1
2
Marking Code: PH
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
Reverse Voltage
VRM
VR
IO
80
V
V
80
Average Forward Current
Maximum Peak Forward Current
Surge Current (t = 1 µs)
Power Dissipation
100
mA
mA
A
IFM
IFSM
Ptot
Tj
300
4
200
mW
O
C
Junction Temperature
150
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
VF
Max.
1.2
Unit
V
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 70 V
IR
CT
trr
0.1
3.5
4
µA
pF
ns
Total Capacitance
at VR = 6 V, f = 1 MHz
Reverse Recovery Time
at VR = 6 V, IF = 5 mA, RL = 50 Ω
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
MMBD202CCW
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
相关型号：
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