MMBT2222 [SEMTECH]
NPN Silicon Epitaxial Planar Medium Power Transistor; NPN硅外延平面中功率晶体管
| 型号： | MMBT2222 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Medium Power Transistor |
| 文件： | 总4页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2222 / MMBT2222A
NPN Silicon Epitaxial Planar Medium Power Transistor
for switching and amplifier applications
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Value
Parameter
Symbol
Unit
MMBT2222
MMBT2222A
Collector Base Voltage
VCBO
VCEO
VEBO
IC
60
30
5
75
40
6
V
V
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
V
600
mA
mW
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Ptot
Tj
200
150
O
C
O
C
TS
-55 to +150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2006
MMBT2222 / MMBT2222A
O
Characteristics at Ta = 25 C
Parameter
DC Current Gain
Symbol
Min.
Max.
Unit
at VCE = 10 V, IC = 0.1 mA
at VCE = 10 V, IC = 1 mA
at VCE = 10 V, IC = 10 mA
at VCE = 1 V, IC = 150 mA
at VCE = 10 V, IC = 150 mA
at VCE = 10 V, IC = 500 mA
hFE
hFE
hFE
hFE
hFE
hFE
hFE
35
50
-
-
-
-
-
-
-
-
-
75
-
50
-
100
30
300
MMBT2222
-
-
MMBT2222A
40
Collector Base Voltage
at IC = 10 µA
60
75
-
-
MMBT2222
VCBO
VCEO
VEBO
V
V
V
MMBT2222A
Collector Emitter Voltage
at IC = 10 mA
30
40
-
-
MMBT2222
MMBT2222A
Emitter Base Voltage
at IE = 10 µA
5
6
-
-
MMBT2222
MMBT2222A
Collector Base Cutoff Current
at VCB = 50 V
at VCB = 60 V
-
-
100
100
MMBT2222
ICBO
nA
nA
MMBT2222A
Emitter Base Cutoff Current
at VEB = 3 V
IEBO
-
100
Collector Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
-
-
-
-
0.4
0.3
1.6
1
VCE(sat)
V
V
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
-
0.6
-
1.3
1.2
2.6
2
VBE(sat)
at IC = 500 mA, IB = 50 mA
-
Transition Frequency
at VCE = 20 V, -IE = 20 mA, f = 100 MHz
fT
Cob
Cib
td
300
-
MHz
pF
pF
ns
Collector Output Capacitance
at VCB = 10 V, f = 100 KHz
Emitter Input Capacitance
at VEB = 0.5 V, f = 100 KHz
Delay Time
at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA
Rise Time
at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA
Storage Time
-
-
-
-
-
-
8
25
10
25
225
60
tr
ns
tstg
tf
ns
at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA
Fall Time
at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2006
MMBT2222 / MMBT2222A
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2006
MMBT2222 / MMBT2222A
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2006
相关型号：
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