MMBT5087 [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | MMBT5087 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5087
PNP Silicon Epitaxial Planar Transistor
for general purpose application
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-VCBO
-VCEO
-VEBO
-IC
50
V
V
50
3
100
V
mA
mA
mW
Peak Collector Current
Power Dissipation
-ICM
Ptot
200
200
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 100 µA
at -VCE = 5 V, -IC = 1 mA
at -VCE = 5 V, -IC = 10 mA
Collector Cutoff Current
at -VCB = 35 V
Emitter Cutoff Current
at -VEB = 3 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
hFE
hFE
hFE
250
250
250
800
-
-
-
-
-
-ICBO
-IEBO
-
-
50
nA
nA
V
50
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(on)
fT
50
50
3
-
-
-
V
Emitter Base Breakdown Voltage
at -IE = 100 µA
V
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 1 mA
Transition Frequency
at -VCE = 5 V, IE = 0.5 mA, f = 100 MHz
Collector Base Capacitance
at -VCE = 5 V, IE = 0 , f = 100 KHz
-
0.3
0.85
-
V
-
V
40
-
MHz
pF
Ccb
4
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/04/2007
MMBT5087
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/04/2007
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