MMBT591A [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | MMBT591A |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT591A
PNP Silicon Epitaxial Planar Transistor
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-VCBO
-VCEO
-VEBO
-IC
40
V
V
40
5
V
1
A
Peak Pulse Current
-ICM
Ptot
2
200
A
Power Dissipation
mW
O
Junction Temperature
Storage Temperature Range
TJ
150
C
O
C
TS
- 65 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
at -VCE = 5 V, -IC = 100 mA
at -VCE = 5 V, -IC = 500 mA
at -VCE = 5 V, -IC = 1 A
hFE
hFE
hFE
hFE
300
300
250
160
-
-
-
-
-
800
-
-
Collector Cutoff Current
at -VCB = 30 V
-ICBO
-ICEO
-IEBO
-
-
-
0.1
0.1
0.1
µA
µA
µA
Collector Cutoff Current
at -VCE = 30 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 1 mA
at -IC = 500 mA, -IB = 20 mA
at -IC = 1 A, -IB = 100 mA
-
-
-
0.2
0.35
0.5
-VCEsat
V
Base Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
Base Emitter Voltage
-VBEsat
-VBE
CC
-
1.1
1
V
V
-
-
at -IC = 1 A, -VCE = 5 V
Collector Capacitance
at -VCB = 10 V, f = 1 MHz
12
-
pF
Gain Bandwidth Product
at -VCE = 10 V, -IC = 50 mA, f = 100 MHz
fT
150
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/09/2006
MMBT591A
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/09/2006
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