MMBT8550W [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | MMBT8550W |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT8550W (1.5A)
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Symbol
-VCBO
-VCEO
-VEBO
-ICM
Value
Unit
V
40
25
V
5
1.5
V
Peak Collector Current
Total Power Dissipation
Junction Temperature
A
Ptot
200
mW
O
C
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
MMBT8550CW
MMBT8550DW
hFE
hFE
hFE
100
160
40
250
400
-
-
-
-
at -VCE = 1 V, -IC = 800 mA
Collector Base Voltage
at -IC = 100 µA
Collector Emitter Voltage
at -IC = 100 µA
Emitter Base Voltage
at -IE = 100 µA
Collector Base Cutoff Current
at -VCB = 40 V
Collector Emitter Cutoff Current
at -VCE = 20 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 800 mA, -IB = 80 mA
Base Emitter Saturation Voltage
at -IC = 800 mA, -IB = 80 mA
Transition Frequency
-VCBO
-VCEO
-VEBO
-ICBO
40
-
-
V
V
25
5
-
V
-
100
100
100
0.5
1.2
-
nA
nA
nA
V
-ICEO
-
-IEBO
-
-VCE(sat)
-VBE(sat)
fT
-
-
V
100
MHz
at -VCE = 10 V, -IC = 50 mA, f = 30 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/08/2006
MMBT8550W (1.5A)
DC Current Gain
VCE=-1V
Static Characteristic
-0.5
-0.4
1000
100
10
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
-0.3
-0.2
-0.1
IB=-1.0mA
IB=-0.5mA
1
0
-0.4 -0.8 -1.2 -1.6 -2.0
-0.1
-1
-10
-100 -1000
VCE(V), COLLECTOR-EMITTR VOLTAGE
IC(mA), COLLECTOR CURRENT
Base -Emittr Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
-100
-10000
VCE=-1V
IC=10IB
VBE(sat)
-10
-1
-1000
-100
VCE(sat)
-0.1
-10
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100 -1000
VBE(V), BASE-EMITTER VOLTAGE
IC(mA), COLLECTOR CURRENT
Current Gain Bandwidth Product
1000
100
10
VCE=-10V
-1
-10
-100
-1000
IC(mA), COLLECTOR CURRENT
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/08/2006
相关型号：
MMBT8599L
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB, CASE 318-07, 3 PIN
MOTOROLA
MMBT9012D
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
UTC
MMBT9012E
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
UTC
MMBT9012F
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明