MMDT5211W [SEMTECH]
NPN Silicon Epitaxial Planar Digital Transistor; NPN硅外延平面晶体管数字
| 型号： | MMDT5211W |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Digital Transistor |
| 文件： | 总3页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMDT5210W…MMDT521ZW
NPN Silicon Epitaxial Planar Digital Transistor
Collector
(Output)
R1
Base
(Input)
R2
Emitter
(Common)
Resistance Values
Type
R1 (KΩ)
47
R2 (KΩ)
Type
R1 (KΩ)
47
R2 (KΩ)
10
MMDT5210W
MMDT5211W
MMDT5212W
MMDT5213W
MMDT5214W
MMDT5215W
MMDT5216W
MMDT5217W
MMDT5218W
MMDT5219W
-
10
22
47
47
-
MMDT521DW
MMDT521EW
MMDT521FW
MMDT521KW
MMDT521LW
MMDT521MW
MMDT521NW
MMDT521TW
MMDT521VW
MMDT521ZW
10
47
22
22
4.7
10
10
47
4.7
4.7
47
10
4.7
2.2
4.7
22
10
4.7
22
-
47
-
47
0.51
1
5.1
10
2.2
4.7
2.2
22
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VCBO
VCEO
IC
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Collector Current
50
50
V
100
mA
mW
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Ptot
200
O
C
Tj
150
O
C
TS
- 55 to + 150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/06/2007
MMDT5210W…MMDT521ZW
O
Characteristics at Ta = 25 C
Parameter
Symbol Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 10 V, IC = 5 mA
MMDT5218/521K/521L/521VW
MMDT5219/521D/521FW
MMDT5211W
MMDT5212/521EW
MMDT521ZW
MMDT5213/5214/521MW
MMDT521N/521TW
MMDT5210/5215/5216/5217W
20
30
35
60
60
80
80
160
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hFE
-
200
-
400
460
1)
Collector Base Cutoff Current
at VCB = 50 V
ICBO
-
-
100
nA
Emitter Base Cutoff Current
at VEB = 6 V
MMDT5210/5215/5216/5217W
MMDT5213W
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.01
0.1
0.2
0.4
0.5
1
MMDT5212/5214/521D/521E/521M/521N/521TW
MMDT521ZW
MMDT5211W
MMDT521F/521KW
MMDT5219W
MMDT5218/521L/521VW
IEBO
mA
1.5
2
Collector Base Breakdown Voltage
at IC = 10 µA
V(BR)CBO
V(BR)CEO
VCEsat
50
50
-
-
-
-
V
V
V
Collector Emitter Breakdown Voltage
at IC = 2 mA
-
-
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
0.3
-
Transition Frequency
at VCB = 10 V, -IE = 5 mA, f = 100 MHz
fT
-
250
MHz
Input Voltage (ON)
at VO = 0.3 V, IO = 20 mA
at VO = 0.3 V, IO = 20 mA
at VO = 0.3 V, IO = 2 mA
at VO = 0.3 V, IO = 2 mA
at VO = 0.3 V, IO = 2 mA
at VO = 0.3 V, IO = 10 mA
at VO = 0.2 V, IO = 5 mA
at VO = 0.3 V, IO = 2 mA
at VO = 0.3 V, IO = 5 mA
at VO = 0.2 V, IO = 5 mA
at VO = 0.3 V, IO = 5 mA
at VO = 0.3 V, IO = 1 mA
MMDT521V/521L/5219/5218W
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
2.5
2.5
5
4
3
3
3
1.1
1.7
1.3
1.4
MMDT521FW
MMDT521TW
MMDT521DW
MMDT521EW
MMDT5211W
MMDT5212W
MMDT5213/521KW
MMDT521MW
MMDT521ZW
MMDT521NW
MMDT5214W
-VI(ON)
V
1)
h
Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460
FE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/06/2007
MMDT5210W…MMDT521ZW
O
Characteristics at Ta = 25 C
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Input Voltage (OFF)
at VCC = 5 V, IO = 100 µA
MMDT521V/521L/5211/5212/5213W
0.5
0.5
-
-
-
-
-
-
-
-
-
-
-
-
MMDT5218/5219/521M/521Z/521NW
MMDT521F/5214W
MMDT521TW
MMDT521DW
MMDT521K/521EW
0.3
0.4
1
-VI(OFF)
0.8
Input Resistance
MMDT5218W
MMDT5219W
0.51
1
MMDT521M/521V
2.2
4.7
10
22
47
R1
- 30%
+ 30%
KΩ
MMDT5216/521F/521L/521N/521ZW
MMDT5211/5214/5215/521KW
MMDT5212/5217/521TW
MMDT5210/5213/521D/521EW
Resistance Ratio
-
-
0.047
0.1
0.1
0.21
0.21
0.47
0.47
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MMDT521MW
MMDT521NW
MMDT5218/5219W
MMDT521ZW
MMDT5214W
MMDT521TW
MMDT521FW
MMDT521VW
MMDT5211/5212/5213/521LW
MMDT521KW
MMDT521EW
0.08
-
0.17
-
0.37
-
0.8
1.7
1.7
3.7
0.12
-
0.25
-
0.57
-
1.2
2.6
2.6
5.7
R1/R2
1
2.13
2.14
4.7
MMDT521DW
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/06/2007
相关型号：
©2020 ICPDF网 联系我们和版权申明