MMFTN138 [SEMTECH]
N-Channel Logic Level Enhancement Mode Field Effect Transistor; N沟道逻辑电平增强模式场效应晶体管
| 型号： | MMFTN138 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMFTN138
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
for low voltage, low current switching applications
1. Gate 2. Source 3. Drain
SOT-23 Plastic Package
Drain
Gate
Source
O
Absolute Maximum Ratings (Ta = 25 C unless otherwise specified)
Parameter
Symbol
VDSS
Value
Unit
Drain-Source Voltage
50
50
V
V
Drain-Gate Voltage (RGS ≤ 20 KΩ)
VDGR
Gate-Source Voltage - Continuous
± 20
± 40
VGSS
V
Gate-Source Voltage - Non-Repetitive (TP < 50 µs)
Drain Current - Continuous
Drain Current - Pulsed
220
880
ID
mA
Total Power Dissipation
Ptot
360
mW
O
C
Operating and Storage Temperature Range
Tj, Ts
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJA
Value
350
Unit
K/W
Thermal Resistance from Juntion to Ambient
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 01/06/2006
MMFTN138
O
Characteristics at Ta = 25 C unless otherwise specified
Parameter
Symbol
V(BR)DSS
Min.
50
Max.
-
Unit
V
Drain-Source Breakdown Voltage
at ID = 250 µA
Drain-Source Leakage Current
at VDS = 50 V
IDSS
-
-
500
100
nA
at VDS = 30 V
Gate-Source Leakage Current
at VGS = ± 20 V
IGSS
-
± 100
1.6
nA
V
Gate-Source Threshold Voltage
at VGS = VDS, ID = 1 mA
VGS(th)
0.8
Drain-Source On-State Resistance
at VGS = 10 V, ID = 220 mA
-
-
3.5
6
RDS(on)
Ω
at VGS = 4.5 V, ID = 220 mA
Forward Transconductance
at VDS = 10 V, ID = 220 mA
gFS
Ciss
Coss
Crss
td(on)
tr
0.12
-
S
Input Capacitance
at VDS = 25 V, f = 1 MHz
-
-
-
-
-
-
-
60
25
10
8
pF
pF
pF
ns
ns
ns
ns
Output Capacitance
at VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
at VDS = 25 V, f = 1 MHz
Turn-On Delay Time
at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
Turn-On Rise Time
at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
12
16
22
Turn-Off Delay Time
at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
td(off)
tf
Turn-Off Fall Time
at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
Drain-Source Diode Characteristics and Maximum Ratings
Parameter
Symbol
IS
Min.
Max.
220
880
Unit
mA
mA
Maximum Continuous Source Current
Maximum Pulse Source Current
-
-
ISM
Drain-Source Diode Forward Voltage
at IS = 440 mA
VGD
-
1.4
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 01/06/2006
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