MUR1620CT [SEMTECH]
GLASS PASSIVATED HIGH EFFICENCY RECTIFIER; 玻璃钝化较高的工作功率整流器
| 型号： | MUR1620CT |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | GLASS PASSIVATED HIGH EFFICENCY RECTIFIER |
| 文件： | 总2页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR1620CT
GLASS PASSIVATED HIGH EFFICENCY RECTIFIER
Reverse Voltage – 50 to 1000 Volts
Forward Current – 16.0 Amperes
Features
•
•
Low forward voltage, High current capability
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O utilizing Flame Retardant Epoxy
Molding Compound.
•
•
•
High surge capacity
Low power loss, high efficiency
Ultra fast recovery times, high voltage
Mechanical Data
PIN 1
PIN 2
•
•
•
•
•
Case: Molded plastic, TO-220
CASE
PIN2
Terminals: leads solderable per
MIL-STD-202, method 208 guaranteed
Polarity: As marked
Positlve CT
Mounting Position: Any
Absolute Maximum Ratings and Characteristics
Dimensions in mm
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave,60Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Symbols
VRRM
VRMS
Value
200
140
Units
Volts
Volts
Volts
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward Rectified current
at TC = 100 ℃
VDC
200
IF(AV)
IFSM
16.0
125
Amps
Amps
Peak forward surge current
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
Maximum forward voltage at 8.0A and TA = 25℃
Typical junction Capacitance (Note1)
Maximum reverse recovery time (Note 2)
Typical thermal resistance (Note3)
VF
CJ
1.0
80
Volts
pF
TRR
R0JC
50
3.0
10
nS
℃/W
µAmps
µAmps
℃
Maximum reverse current at
rated DC blocking voltage
@TA = 25℃
@TC =125℃
IR
500
-55 to +150
Operating and storage temperature range
TJ ,Ts
Notes :1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse recovery test conditions: IF = 0.5A, IR = 1A, IRR = 0.25A
3. Thermal resistance from junction to case per leg mounted on heatsink.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2003
MUR1620CT
FIG.1 Reverse Recovery Time Characteristic and Test Circuit Diagram
10
50
NONINDUCTIVE
NONINDUCTIVE
trr
+0.5A
DUT
(-)
0
(+)
PULSE
50Vdc
(appox)
(-)
-0.25A
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(NOTE 1)
(+)
1
NON
INDUCTIVE
-1.0A
1cm
SET TIME BASE FOR
5/10ns/cm
NOTES:1. Rise Time=7ns max. Input Impedance=
1 megohm 22 pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.3 Typical Reverse
Characteristics Per Leg
FIG.2 Muximum Forward Current
Derating Curve
1000
20
16
Tj=125°C
100
10
1
12
8
4
0
Tj=25°C
0
50
100
150
Case Temperature. (°C)
FIG.4 Maximum Non-repetitive Forward
Surge Current Per Leg
140
0.1
20 40 60 80 100 120
Tj=25°C
8.3ms Single Half Sine Wave
JEDEC Method
120
90
Percent of Rated Peak Reverse
Voltage. (%)
60
FIG.6 Typical Forward
Characteristics Per Leg
30
100
1
2
5
10
20
50 100
30
10
Number of Cycles at 60Hz
FIG.5 Typical Junction Capacitance
Per Leg
3.0
1.0
240
200
Tj=25°C
160
120
80
40
0
0.3
0.1
Tj=25°C
0.03
PULSE WIDTH-300
1% DUTY CYCLE
s
0.01
1
2
5
10 20 50 100 200 500 1000
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage. (V)
Reverse Voltage. (V)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2003
相关型号：
MUR1620CT-BP
Rectifier Diode, 1 Phase, 2 Element, 16A, 200V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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