RCLAMP2504N.TCT [SEMTECH]
RailClamp® 2.5V & 3.3V TVS Arrays; RailClamp㈢ 2.5V和3.3V TVS阵列
| 型号： | RCLAMP2504N.TCT |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | RailClamp® 2.5V & 3.3V TVS Arrays |
| 文件： | 总11页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RClamp2504N & RClamp3304N
RailClamp
2.5V & 3.3V TVS Arrays
PROTECTION PRODUCTS - RailClamp
Features
Description
A RailClamp is a low capacitance TVS array designed
to protect high speed data interfaces. This series has
been specifically designed to protect sensitive compo-
nents which are connected to data and transmission
lines from overvoltage caused by ESD (electrostatic
discharge), CDE (Cable Discharge Events), and Light-
ning.
Transient protection for high-speed data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 25A (8/20µs)
Array of surge rated diodes with internal TVS Diode
Small package saves board space
Protects up to four I/O lines
The unique design incorporates surge rated, low
capacitance steering diodes and a TVS diode in a
single package. During transient conditions, the
steering diodes direct the transient current to ground.
The internal TVS diode clamps the transient voltage to
a safe level. The low capacitance array configuration
allows the user to protect up to four high-speed data
lines.
The RClampTM3304N and RClampTM2504N are con-
structed using Semtech’s proprietary EPD process
technology. The EPD process provides low stand-off
voltages with significant reductions in leakage current
and capacitance over silicon-avalanche diode pro-
cesses. They feature a true operating voltage of 2.5
volts and 3.3 volts for superior protection.
Low capacitance (<5pF) for high-speed interfaces
Low leakage current and clamping voltage
Low operating voltage: 2.5V and 3.3V
Solid-state silicon-avalanche technology
Mechanical Characteristics
SLP2626P10 10L package
RoHS/WEEE Compliant
Nominal Dimensions: 2.6 x 2.6 x 0.60 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking Code + Date Code
Packaging : Tape and Reel
Applications
These devices are in a 10-pin, RoHS/WEEE compliant,
SLP2626P10 package. It measures 2.6 x 2.6 x
0.60mm. The leads are spaced at a pitch of 0.5mm
and are finished with lead-free NiPdAu. The high surge
capability (Ipp=25A, tp=8/20µs) means it can be used
in high threat environments in applications such as
Gigabit Ethernet, telecommunication lines, and digital
video.
USB 2.0
10/100/1000 Ethernet
Digital Visual Interface (DVI)
T1/E1 Secondary Protection
T3/E3 Secondary Protection
Analog Video
Circuit Diagram
Package Configuration
2.60
C
L
1 2
Pin 5
2.60
C
L
Pin 1
Pin 9
Pin 3
Pin 7
0.50 BSC
Gnd
0.60
www.semtech.com
Revision 01/15/2008
1
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Absolute Maximum Rating
Rating
Symbol
Ppk
Value
450
25
Units
Watts
A
Peak Pulse Power (tp = 8/20µs)
Peak Pulse Current (tp = 8/20µs)
IPP
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
VESD
25
15
kV
Operating Temperature
Storage Temperature
TJ
-55 to +125
-55 to +150
°C
°C
TSTG
Electrical Characteristics (T=25oC)
RClamp2504N
Parameter
Reverse Stand-Off Voltage
Punch-Through Voltage
Snap-Back Voltage
Symbol
VRWM
VPT
VSB
IR
Conditions
Minimum
Typical
Maximum
Units
2.5
V
V
IPT = 2µA
2.7
2.0
ISB = 50mA
V
Reverse Leakage Current
Clamping Voltage
VRWM = 2.5V, T=25°C
IPP = 1A, tp = 8/20µs
IPP = 10A, tp = 8/20µs
IPP = 25A, tp = 8/20µs
0.5
4.5
7.5
15
5
µA
V
VC
Clamping Voltage
VC
V
Clamping Voltage
VC
V
Junction Capacitance
Cj
Between I/O pins and Ground
VR = 0V, f = 1MHz
3.8
2.0
pF
Between I/O pins
VR = 0V, f = 1MHz
pF
Note 1: I/O pins are pin 1, 3, 7, and 9
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2008 Semtech Corp.
2
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
RClamp3304N
Parameter
Reverse Stand-Off Voltage
Punch-Through Voltage
Snap-Back Voltage
Symbol
Conditions
Minimum
Typical
Maximum
Units
VRWM
VPT
VSB
IR
3.3
V
V
IPT = 5µA
3.5
2.8
ISB = 50mA
V
Reverse Leakage Current
Clamping Voltage
VRWM = 3.3V, T=25°C
IPP = 1A, tp = 8/20µs
IPP = 10A, tp = 8/20µs
IPP = 25A, tp = 8/20µs
5
5.5
10.5
18
5
µA
V
VC
Clamping Voltage
VC
V
Clamping Voltage
VC
V
Junction Capacitance
Cj
Between I/O pins and Ground
VR = 0V, f = 1MHz
3.8
2.0
pF
Between I/O pins
VR = 0V, f = 1MHz
pF
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2008 Semtech Corp.
3
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
10
1
110
100
90
80
70
60
50
40
30
20
10
0
0.1
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
Ambient Temperature - TA (oC)
Pulse Duration - tp (us)
Pulse Waveform
Normalized Junction Capacitance
vs. Reverse Voltage
110
100
90
80
70
60
50
40
30
20
10
0
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Waveform
Parameters:
tr = 8µs
td = 20µs
e-t
td = IPP/2
f = 1 MHz
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
Reverse Voltage - VR (V)
Time (µs)
Clamping Voltage vs. Peak Pulse Current
I/O to GND
Clamping Voltage vs. Peak Pulse Current
I/O to I/O
20
15
10
5
25
20
15
10
5
RClamp3304N
RClamp3304N
RClamp2504N
RClamp2504N
Waveform
Parameters:
tr = 8µs
Waveform
Parameters:
tr = 8µs
td = 20µs
td = 20µs
0
0
0
5
10
15
20
25
0
5
10
15
20
25
Peak Pulse Current - IPP (A)
Peak Pulse Current - IPP (A)
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2008 Semtech Corp.
4
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Typical Characteristics
Insertion Loss S21 (I/O to Ground)
ESD Clamping
(8kV Contact per IEC 61000-4-2)
CH1S21 LOG
6 dB / REF 0 dB
1: -1.0230 dB
800 MHz
2: -1.1051 dB
900 MHz
0 dB
1
2
3
4
3: -2.0922 dB
1.8 GHz
-6 dB
-12 dB
-18 dB
-24 dB
-30 dB
-36 dB
4: -3.0779 dB
2.5 GHz
5: -4.5358 dB
2.7 GHz
-42 dB
-48 dB
1
10
MHz
100
3
1
MHz
MHz
MHz
GHz GHz
START.
STOP 3000.000000MHz
Note: Data is taken with a 10x attenuator
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5
2008 Semtech Corp.
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Applications Information
Device Connection Options for Protection of Four
High-Speed Data Lines
Circuit Diagram
Pin 5
These devices are designed to protect low voltage data
lines operating at 2.5 volts or 3.3 volts. When the
voltage on the protected line exceeds the reference
voltage the steering diodes are forward biased,
conducting the transient current away from the
sensitive circuitry.
Pin 1
Pin 9
Pin 3
Pin 7
Data lines are connected at pins 1, 3, 7 and 9. The
center pin should be connected directly to a ground
plane. The path length is kept as short as possible to
minimize parasitic inductance. Pins 2, 4, 6, 8, and 10
are not connected.
Gnd
Note that pin 5 is connected internally to the cathode
of the low voltage TVS. It is not recommended that
these pins be directly connected to a DC source
greater than the snap-back votlage (VSB) as the device
can latch on as described below.
Figure 1. Pin Configuration (Top Side View)
1
2
3
4
5
10
9
8
7
6
EPD TVS Characteristics
GND
These devices are constructed using Semtech’s
proprietary EPD technology. By utilizing the EPD tech-
nology, the RClamp2504N and RClamp3304N can
effectively operate at 2.5V and 3.3V respectively while
maintaining excellent electrical characteristics.
Pin
Identification
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. Since the EPD
TVS devices use a 4-layer structure, they exhibit a
slightly different IV characteristic curve when compared
to conventional devices. During normal operation, the
device represents a high-impedance to the circuit up to
the device working voltage (VRWM). During an ESD
event, the device will begin to conduct and will enter a
low impedance state when the punch through voltage
(VPT) is exceeded. Unlike a conventional device, the low
voltage TVS will exhibit a slight negative resistance
characteristic as it conducts current. This characteris-
tic aids in lowering the clamping voltage of the device,
but must be considered in applications where DC
voltages are present.
1, 3, 7, 9
2, 4, 6, 8, 10
Input/Output Lines
No Connect
No Connect
(Do not connect this pin to a DC supply)
5
Center Tab
Ground
defined on the curve by the snap-back voltage (VSB)
and snap-back current (ISB). To return to a non-
conducting state, the current through the device must
fall below the ISB (approximately <50mA) and the
voltage must fall below the VSB (normally 2.8 volts for a
3.3V device). If a 3.3V TVS is connected to 3.3V DC
source, it will never fall below the snap-back voltage of
2.8V and will therefore stay in a conducting state.
When the TVS is conducting current, it will exhibit a
slight “snap-back” or negative resistance
characteristics due to its structure. This point is
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2008 Semtech Corp.
6
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Applications Information
RClamp2504N
1
2
RClamp2504N
Gigabit
1
2
Ethernet
Transceiver
RClamp2504N
1
2
RClamp2504N
1
2
Schematic Diagram for Gigabit Ethernet Telcordia GR-1089 Intra-Building Protection
(PHY Operating Temp <= 90°C)
10
1
2
9
8
7
6
3
4
5
RClamp2504N
10
1
2
9
8
7
6
3
4
5
RClamp2504N
Schematic Diagram for Gigabit Ethernet ESD Protection
www.semtech.com
2008 Semtech Corp.
7
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Applications Information - Spice Model
RClamp2504N Spice Model
RClamp2504N Spice Parameters
Parameter
Unit
Amp
Volt
Volt
Ohm
Amp
Farad
sec
--
D1 (LCRD)
1E-20
100
D2 (LCRD)
1E-20
100
D3 (TVS)
1.66E-13
2.89
IS
BV
VJ
0.63
0.59
0.53
RS
IBV
CJO
TT
0.138
1E-3
0.241
1E-3
0.06
1E-3
1.5E-12
2.541E-9
0.01
1.5E-12
2.541E-9
0.01
288E-12
2.541E-9
0.17
M
N
--
1.1
1.1
1.1
EG
eV
1.11
1.11
1.11
www.semtech.com
2008 Semtech Corp.
8
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Applications Information - Spice Model
RClamp3304N Spice Model
RClamp3304N Spice Parameters
Parameter
Unit
Amp
Volt
Volt
Ohm
Amp
Farad
sec
--
D1 (LCRD)
1E-20
100
D2 (LCRD)
1E-20
100
D3 (TVS)
1.66E-13
3.55
IS
BV
VJ
0.62
0.59
0.6
RS
IBV
CJO
TT
0.138
1E-3
0.241
1E-3
0.182
1E-3
1.5E-12
2.541E-9
0.01
1.5E-12
2.541E-9
0.01
253E-12
2.541E-9
0.205
1.1
M
N
--
1.1
1.1
EG
eV
1.11
1.11
1.11
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2008 Semtech Corp.
9
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Outline Drawing - SLP2626P10
DIMENSIONS
B
E
A
D
INCHES
MILLIMETERS
DIM
A
MIN NOMMAX MIN NOM MAX
.020
.026 0.50 0.60 0.65
.002 0.00 0.03 0.05
(0.17)
.024
.001
A1 .000
A2
PIN 1
INDICATOR
(.007)
b
.007 .010 .012 0.20 0.25 0.30
.098 .102 .106 2.50 2.60 2.70
(LASER MARK)
D
D1 .079 .085 .089 2.00 2.15 2.25
E
E1
e
.098 .102 .106 2.50 2.60 2.70
1.26
.044 .050 .054 1.11
1.36
.020 BSC
0.50 BSC
0.35
10
L
N
.011 .014 .016 0.30
0.40
A
SEATING
PLANE
10
aaa
.003
.004
0.08
0.10
aaa C
A2
bbb
C
A1
D1
C
L
1
2
E/2
E1
C
L
LxN
N
e
bxN
D/2
bbb
C A B
NOTES:
1.
2.
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
Land Pattern - SLP2626P10
X
P
DIMENSIONS
DIM
INCHES
MILLIMETERS
B
C
F
.081
.100
.050
.073
.020
.012
.025
.124
2.05
2.50
1.26
1.85
0.50
0.30
0.65
3.15
(C)
F
Z
G
G
P
X
Y
Z
Y
B
NOTES:
1.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
www.semtech.com
2008 Semtech Corp.
10
RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Marking
Ordering Information
Working
Voltage
Qty per
Reel
Part Number
Reel Size
2504N
3304N
YYWW
YYWW
RClamp2504N.TCT
RClamp3304N.TCT
2.5 Volts
3.3 Volts
3,000
3,000
7 Inch
7 Inch
RClamp2504N
RClamp3304N
RailClamp and RClamp are marks of Semtech Corporation
YYWW = Date Code
Tape and Reel Specification
Pin 1 Location
User Direction of feed
Device Orientation in Tape
A0
B0
K0
2.77 +/-0.05 mm
2.77 +/-0.05 mm
0.80 +/-0.05 mm
Tape
K
(MAX)
B, (Max)
Width
D
D1
E
F
P
P0
P2
T(MAX)
W
8.0 mm
+ 0.3 mm
- 0.1 mm
1.0 mm
±0.05
1.750±.10
mm
4.2 mm
8 mm
1.5 + 0.1 mm
- 0.0 mm
3.5±0.05
mm
4.0±0.1
mm
4.0±0.1
mm
2.0±0.05
mm
2.4 mm
0.4 mm
(.165)
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
www.semtech.com
2008 Semtech Corp.
11
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