S1K [SEMTECH]
SURFACE MOUNT GENERAL RECTIFIER; 表面安装普通整流
| 型号： | S1K |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SURFACE MOUNT GENERAL RECTIFIER |
| 文件： | 总2页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S1A THRU S1M
SURFACE MOUNT GENERAL RECTIFIER
Reverse Voltage – 50 to 1000 V
Forward Current – 1 A
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Glass passivated chip junction
• For surface mount application
• Low profile package
• Built-in strain relief, ideal for automated placement
Mechanical Data
• Case: SMA (DO-214AC), molded plastic
• Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity: Color band denotes cathode end
Absolute Maximum Ratings and Characteristics
Ratings at 25O C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbols S1A S1B S1D S1G S1J S1K S1M Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1
600
420
600
800 1000
560 700
800 1000
V
V
V
A
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
IF(AV)
Peak Forward Surge Current , 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
Method)
IFSM
30
A
1.1
V
Maximum Forward Voltage at 1 A
VF
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
at TA = 25 OC
at TA = 125 OC
5
μA
50
Typical Junction Capacitance
at VR = 4 V, f = 1 MHz
12
pF
CJ
Rθ
75
27
JA
Typical Thermal Resistance 1)
OC/W
OC
Rθ
JL
Operating and Storage Temperature Range
TJ, TS
- 55 to +1 50
1) Thermal resistance from junction to ambient from junction to lead mounted on P.C.B. with 0.2 X 0.2" (5 X 5 mm) copper pad
areas
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/04/2008
S1A THRU S1M
FIG.2- PEAK FORWARD SURGE CURRENT
FIG.1-FORWARD DERATING CURVE
100
1.2
1
TL=110
C
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single half Sine Wave
(JEDEC Method)
S1(A.J)
S1(K.M)
0.8
0.6
0.4
10
S1(A.J)
S1(K.M)
0.2x0.2(5.0x5.0mm)
Thick copper pad areas
0.2
0
1
60
0
20 40
80 100 120 140
160
100
1
10
LEAD TEMPERATURE, ( C)
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
FIG.3-TYPICAL FORWARD CHARACTERISTICS
100
100
10
1
10
1
TJ=125
C
TJ=75
C
TJ=25oC
PULSE WIDTH=300
1% DUTY CYCLE
0.1
0.01
0.1
s
TJ=25
C
0.01
0.4 0.6 0.8
1.8 2.0
1.6
1.4
1.0 1.2
0.001
INSTANTANEOUS FORWARD VOLTAGE (V)
0
20
40
100
60 80
PERCENT OF RATED PEAK REVERSE
VOLTS,%
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
FIG.6- TRANSIENT THERMAL
IMPEDANCE
1000
100
TJ=25
f=1.0MHz
Vsig=50mVp-p
C
S1(K.M)
10
S1(A.J)
10
1
1
0.01
0.1
1
10
100
100
0.01
0.1
1
10
t, PULSE DURATION
REVERSE VOLTAGE, V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/04/2008
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