SC1302DSTRT [SEMTECH]
Dual High Speed Low-Side MOSFET Driver; 双高速低侧MOSFET驱动器
| 型号： | SC1302DSTRT |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | Dual High Speed Low-Side MOSFET Driver |
| 文件： | 总10页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SC1302A/B/C/D/E/F
Dual High Speed Low-Side
MOSFET Driver
POWER MANAGEMENT
Description
Features
+4.5V to +16.5V operation
Fast rise and fall times (20ns typical with 1000pf
load)
Dual MOSFET driver
2A peak drive current
40ns propagation delay
8-pin SOIC / MSOP packages
Enable/disable control
The SC1302A/B/C/D/E/F family are low cost dual low-
side MOSFET drivers. These drivers accept TTL-compat-
ible inputs and are capable of supplying high current
outputs (> 2A peak) to external MOSFETs. Fast switch-
ing allows operation up to 1 MHz. The SC1302A/B/C is
available in six configurations: SC1302A is a dual non-
inverting, SC1302B is a dual inverting and SC1302C is a
one inverting plus one non-inverting output.
TTL-compatible input
Under voltage lockout with hysteresis
Low shutdown supply current
Over temperature protection
ESD protection
The SC1302D/E/F is the derivative part from SC1302A/
B/C with pin 1 (EN) and pin 8 (SHDN) internally tied to
VCC.
Dual inverting/non-inverting and inverting/non-invert-
ing configurations
An under-voltage lockout circuit guarantees that the
driver outputs are low when Vcc is less than 4.5V (typ).
An internal temperature sensor shuts down the driver in
the event of over temperature.
Applications
Switch-mode power supplies
Battery powered applications
Solenoid and motor drives
Typical Application Circuit
V load
+12V
10uF
0.1uF
Load A
Load B
S C 1302A
7
6
V C C
2
IN A
E N
InputA
InputB
OU TA
1
8
5
OU TB
S H D N
IN B
4
GN D
3
Revision: April 27, 2005
1
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied. Exposure to Absolute Maximum rated conditions for extended periods of time may affect device
reliability.
Parameter
Symbol
VCC
Typ
-0.3 to 20
-0.3 to 16.5
-0.3 to VCC
3
Units
V
Supply Voltage
Operating Supply Voltage
VCC
V
Input Voltages
VINA, VINB
V
Peak Output Currents
IOUTA, IOUTB
A
Enable Voltage (SC1302A/B/C)
Shutdown Voltage (SC1302A/B/C)
Continuous Power Dissipation
Operating Temperature Range
Thermal Resistance Junction to Ambient (MSOP)
Thermal Resistance Junction to Ambient (SOIC)
Storage Temperature Range
Lead Temperature (Soldering)10 sec
ESD Rating (Human Body Model)
VEN
-0.3 to VCC
-0.3 to VCC
Internally limited
-40 to +125
206
V
VSHDN
Pd
V
W
TA
°C
°C/W
°C/W
°C
°C
kV
θJA
θJA
165
TSTG
TLEAD
ESD
-65 to +150
260
2
DC Electrical Characteristics
Unless otherwise specified:-40°C < TA < 125°C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C) , VSHDN = 5V (SC1302A/B/C).
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Supply Current
Quiescent Current
Quiescent Current
IQ
IQ
VCC < VSTART
1
1.8
8.1
mA
mA
VEN = VSHDN = 3V for SC1302A/B/C,
VINA = VINB = 3V
5.7
Quiescent Current
IQ
VSHDN = 0V for SC1302A/B/C
3
8
µA
Under-Voltage Lockout
Threshold Voltage
VSTART
VSHDN = VEN = 3V for SC1302A/B/C,
VINA = VINB = 3V
4.2
4.5
4.7
V
Hysteresis
VSHDN = VEN = 3V for SC1302A/B/C,
VINA = VINB = 3V
250
320
475
mV
Enable for SC1302A/B/C
Enable Voltage
VEN
VEN
0 < VEN < VCC
0 < VEN < VCC
2.0
V
V
Disable Voltage
0.8
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
DC Electrical Characteristics (Cont.)
Unless otherwise specified:-40°C < TA < 125°C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C) , VSHDN = 5V (SC1302A/B/C).
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Enable for SC1302A/B/C (Cont.)
Delay to Output (1)
Delay to Output (1)
Enable Input Current
Input
tD_EN
EN for low to high
EN from high to low
0 < VIN < VCC
70
55
14
ns
ns
tD_DIS
10
19
µA
IEN
High Level Input Voltage
Low Level Input Voltage
Input Current
VIH
VIL
0 < VIN < VCC
0 < VIN < VCC
2.0
V
V
0.8
I
0 < VIN < VCC
Non-Inverting Input(s) of
SC1302A/C/D/F
13
18.5
µA
IN
0 < VIN < VCC
-8
µA
Inverting Input(s) of SC1302B/C/E/F (2)
Output
Output Peak Current
IPK_SOURCE
IPK_SINK
Shutdown SC1302A/B/C (Cont.)
VOUT = 0.5V, tPW < 10uS
1600
1600
mA
mA
VOUT = VCC - 0.5V, tPW < 10uS
SHDN Input Voltage High
SHDN Input Voltage Low
SHDN Pin Current
VSHDN
VSHDN
ISHDN
2
V
V
0.3
40
VSHDN = 5V
32
µA
Thermal Shutdown
Over Temperature Trip
TJ_OT
150
10
°C
°C
Point(1)
Hysteresis(1)
AC Electrical Characteristics
Unless otherwise specified: TA =25°C, VCC = 12V, VEN = 5V, CL = 1000pF
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Rise time(1)
tR
tF
See Timing Diagram
See Timing Diagram
See Timing Diagram
See Timing Diagram
20
20
53
41
ns
ns
ns
ns
Fall time(1)
Propagation delay time(1)
Propagation delay time(1)
tD1
tD2
Notes:
(1) Guaranteed by design not tested in production.
(2) Negative sign indicates that the input current flows out of the device.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Timing Diagram
5V
90%
Input
0V
10%
tR
tF
90%
90%
Non-inverting
Output
SC1302A
10%
tF
10%
Inverting
Output
tR
SC1302B
90%
90%
10%
10%
tD1
tD2
Pin Descriptions
Pin # SC1302A/D SC1302B/E SC1302C/F
Pin Function
Enable/disable control. When the EN is driven low, both outputs are
low. Whenleft open, bothoutputs are low. Enable bothdrivers by tying
EN pin to a voltage greater than 2V. No connection on versions D, E
and F.
1
EN/NC
EN/NC
EN/NC
2
3
4
5
INA
GND
INB
INA
GND
INB
INA
GND
INB
TTL-compatible input to the driver A. When left open, Pin 7 is low.
Ground.
TTL-compatible input to the driver B. When left open, Pin 5 is low.
Output gate drive B for external MOSFET.
OUTB
OUTB
OUTB
Supply: +4.5V to +16.5V supply. During UVLO, the outputs are held
low.
6
7
VCC
VCC
VCC
OUTA
OUTA
OUTA
Output gate drive A for external MOSFET.
Shutdown pin. Apply a voltage from 2V to VCC to enable device. Pull
8
SHDN/NC
SHDN/NC
SHDN/NC below 0.3V for low-power shut down. No connection on versions D,
E and F.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Pin Configuration
Ordering Information
Part Number (2)
SC1302AISTRT
SC1302BISTRT
SC1302CISTRT
SC1302DSTRT
SC1302ESTRT
SC1302FSTRT
SC1302AIMSTRT
SC1302BIMSTRT
SC1302CIMSTRT
Package (1) Temp. Range (TA)
Top View
SC1302A/D (Dual Non-Inverting)
EN/NC
INA
1
2
3
4
8
7
6
5
SHDN/NC
OUTA
SOIC-8
-40°C to +125°C
-40°C to +125°C
GND
INB
VCC
OUTB
(8-Pin SOIC (A/D)
or MSOP (A only)
MSOP-8
Top View
SC1302B/E (Dual Inverting)
Notes:
(1) Only available in tape and reel packaging. A reel
contains 2500 devices.
EN/NC
INA
1
2
3
4
8
7
6
5
SHDN/NC
OUTA
(2) Lead free product.This product is fully WEEE and
RoHS compliant.
GND
INB
VCC
OUTB
(8-Pin SOIC (B/E)
or MSOP (B only)
Top View
SC1302C/F (Inverting + Non-Inverting)
EN/NC
INA
1
2
3
4
8
7
6
5
SHDN/NC
OUTA
GND
INB
VCC
OUTB
(8-Pin SOIC (C/F)
or MSOP (C only)
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Block Diagrams
EN
EN
VCC
VCC
PRE-
PRE-
OUTA
OUTA
DRIVER
DRIVER
INA
INA
BANDGAP
SHDN
BANDGAP
SHDN
PRE-
PRE-
OUTB
OUTB
DRIVER
DRIVER
INB
INB
SC1302B
SC1302A
GND
GND
EN
VCC
PRE-
OUTA
DRIVER
INA
BANDGAP
SHDN
PRE-
OUTB
DRIVER
INB
SC1302C
SC1302D
GND
SC1302E
SC1302F
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Typical Characteristics
Rise and Fall Time vs. Supply Voltage
Rise and Fall Time vs. Capacitive Load
80
60
40
20
0
25
20
15
10
VCC =12V
f=200KHz
TA =25°C
CL =1000pF
TA =25°C
tf
tr
tf
tr
4
8
12
16
100
1000
10000
Supply Voltage (V)
Capacitive Load (pF)
Supply Current vs. Capacitive Load
Input Pin Current
40
30
20
10
0
15
10
5
VCC =12V
OneDriverRunning
TA =25°C
Non-inverting
Inverting
0
200KHz
100KHz
-5
-10
100
1000
10000
0
4
8
12
Capacitive Load (pF)
Vin (V)
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Applications Information
The SC1302A/B/C/D/E/F is a high speed, high peak For simplicity, we assume that the gate capacitance of a
current dual MOSFET driver. It is designed to drive power MOSFET is constant. The power delivered from the power
MOSFETs with ultra-low rise/fall time and propagation supply can be estimated based on this simplification. The
delays. As the switching frequency of PWM controllers is energy needed to charge the capacitor is given by:
increased to reduce power converters volume and cost,
1
EON
=
⋅ C ⋅ V2
fast rise and fall times are necessary to minimize switching
losses. While discrete solution can achieve reasonable
drive capability, implementing delay and other
housekeeping functions necessary for safe operation can
become cumbersome and costly. The SC1032A/B/C/
D/E/F presents a total solution for the high-speed, high
power density applications. Wide input supply range of
4.5V - 16.5V allows use in battery powered applications
as well as distributed power systems.
2
where C is the load capacitance and V is the output
voltage swing of the driver.
During turn off, the same amount of energy is dumped to
the ground. Therefore, the energy dissipated in one
switching cycle is:
ETOTAL = C⋅ V2
The power dissipation due to the gate driving actions is
given by:
Supply Bypass and Layout
PGATE = f C V2
A 4.7µF to 10µF tantalum bypass capacitor with low ESR
(equivalent series resistance) and an additional 0.1µF
ceramic capacitor in parallel are recommended as supply
bypass to control switching and supply transients.
where, f is the switching frequency.
with VCC= 12V, C = 1nF and f = 200kHz, the power
dissipation per output is:
As with any high speed, high current circuit, proper layout
is critical in achieving optimum performance of the
SC1302A/B/C/D/E/F. Attention should be paid to the
proper placement of the driver, the switching MOSFET
and the bypass capacitors.
PGATE
=
(
200 kHz) (1nF) (12 2
) = 29mW
The corresponding supply current is:
PGATE 29mW
I =
=
= 2.4mA
The driver should be placed as close as possible to the
external MOSFETs to eliminate the possibility of
oscillation caused by trace inductance and the MOSFET
gate capacitance. A resistor in the range of 10W could be
used in series with the gate drive to damp the ringing if
the drive output path is not short enough. The bypass
capacitors should also be placed closely between Vcc and
GND of the driver. A Schottky diode may be used to
connect the ground and the output pin to avoid latch-
ups in some applications.
VCC
12V
Thermal Information
The driver’s junction temperature must be kept within the
rated limit at any time. The application system has to
effectively remove the heat generated in the driver in order
for proper functions and performance. If the junction
temperature reaches 150oC, the internal protection
circuit will be triggered to shut down the gate driver.
Drive Capability and Power Dissipation
The power dissipation of the SC1302A/B/C/D/E/F should
be derated according to the following formula:
The SC1302A/B/C/D/E/F is able to deliver 1.6A peak
current for driving capacitive loads, such as MOSFETs.
125°C − T
θjA
A
Power Dissipation <
Fast switching of the MOSFETs significantly reduces
switching losses for high frequency applications. Thermal
stress is reduced and system reliability is improved.
where T = ambient temperature.
A
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Outline Drawing - MSOP-8
DIMENSIONS
INCHES MILLIMETERS
e/2
DIM
A
MIN NOM MAX MIN NOM MAX
-
-
-
-
-
-
-
-
-
-
-
-
A
.043
1.10
0.15
0.95
0.38
0.23
D
E
A1 .000
A2 .030
.006 0.00
.037 0.75
.015 0.22
.009 0.08
N
b
.009
.003
c
2X
E/2
D
.114 .118 .122 2.90 3.00 3.10
E1 .114 .118 .122 2.90 3.00 3.10
E1
E
e
.193 BSC
.026 BSC
4.90 BSC
0.65 BSC
PIN 1
INDICATOR
.016 .024 .032 0.40 0.60 0.80
L
L1
N
(.037)
8
-
(.95)
8
-
ccc C
2X N/2 TIPS
1 2
01
aaa
0°
8°
0°
8°
e
.004
.005
.010
0.10
0.13
0.25
bbb
ccc
B
D
H
aaa C
A2
A
c
GAGE
SEATING
PLANE
PLANE
A1
bxN
bbb
C
0.25
L
01
C A-B D
(L1)
DETAIL A
SEE DETAIL A
SIDE VIEW
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-
3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS.
4. REFERENCE JEDEC STD MO-187, VARIATION AA.
Land Pattern - MSOP-8
X
DIMENSIONS
DIM
INCHES
MILLIMETERS
(.161)
.098
.026
.016
.063
.224
(4.10)
2.50
0.65
0.40
1.60
5.70
C
G
P
X
Y
Z
(C)
P
G
Y
Z
NOTES:
1.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Outline Drawing - SO-8
DIMENSIONS
INCHES MILLIMETERS
A
DIM
A
MIN NOM MAX MIN NOM MAX
D
E
e
-
-
-
-
-
-
-
-
-
-
.053
.069 1.35
.010 0.10
.065 1.25
.020 0.31
.010 0.17
1.75
0.25
1.65
0.51
0.25
N
A1 .004
A2 .049
b
.012
.007
2X E/2
c
D
.189 .193 .197 4.80 4.90 5.00
E1
E1 .150 .154 .157 3.80 3.90 4.00
E
e
.236 BSC
.050 BSC
6.00 BSC
1.27 BSC
1
2
-
-
h
L
.010
.020 0.25
0.50
ccc
C
.016 .028 .041 0.40 0.72 1.04
2X N/2 TIPS
(.041)
(1.04)
e/2
L1
N
8
8
B
-
-
01
aaa
bbb
ccc
0°
8°
0°
8°
.004
.010
.008
0.10
0.25
0.20
D
aaa
C
h
A2
A
D
SEATING
PLANE
h
C
A1
H
bxN
bbb
C
A-B
c
GAGE
PLANE
0.25
L
(L1)
01
SEE DETAIL A
DETAIL A
SIDE VIEW
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-
3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS.
4. REFERENCE JEDEC STD MS-012, VARIATION AA.
Land Pattern - SO-8
X
DIMENSIONS
DIM
INCHES
(.205)
.118
MILLIMETERS
(5.20)
3.00
1.27
0.60
2.20
7.40
C
G
P
X
Y
Z
(C)
G
Y
Z
.050
.024
.087
.291
P
NOTES:
1.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
2. REFERENCE IPC-SM-782A, RLP NO. 300A.
Contact Information
Semtech Corporation
Power Management Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
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