SC4609 [SEMTECH]

Low Input, MHz Operation, High Efficiency Synchronous Buck; 低投入,兆赫操作,高效率同步降压
SC4609
型号: SC4609
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

Low Input, MHz Operation, High Efficiency Synchronous Buck
低投入,兆赫操作,高效率同步降压

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SC4609  
Low Input, MHz Operation,  
High Efficiency Synchronous Buck  
POWER MANAGEMENT  
Description  
Features  
The SC4609 is a voltage mode step down (buck) regula-  
tor controller that provides accurate high efficiency power  
conversion from an input supply range of 2.7V to 5.5V. A  
high level of integration reduces external component  
count, and makes it suitable for low voltage applications  
where cost, size and efficiency are critical. The SC4609  
is capable of producing an output voltage as low as 0.5V.  
‹ Asynchronous start up  
‹ Programmable switching frequency up to 1MHz  
‹ BiCMOS voltage mode PWM controller  
‹ 2.7V to 5.5V input voltage range  
‹ Output voltage as low as 0.5V  
‹ +/-1% reference accuracy  
‹ Sleep mode (Icc = 10µA typ)  
‹ Adjustable lossless short circuit current limiting  
‹ Combination pulse by pulse & hiccup mode  
current limit  
‹ High efficiency synchronous switching  
‹ 1A peak current driver  
‹ External soft start  
‹ 12-pin MLP Lead-free package, fully WEEE and RoHS  
compliant  
The SC4609 drives external, N-channel MOSFETs with a  
peak gate current of 1A. A non-overlap protection is pro-  
vided for the gate drive signals to prevent shoot through  
of the MOSFET pair. The SC4609 features lossless cur-  
rent sensing of the voltage drop across the drain to  
source resistance of the high side MOSFET during its  
conduction period. Its switching frequency can be pro-  
grammed up to 1MHz.  
Applications  
‹ Distributed power architecture  
‹ Servers/workstations  
The quiescent supply current in sleep mode is typically  
lower than 10µA. A external soft start is provided to pre-  
vent output voltage overshoot during start-up.  
‹ Local microprocessor core power supplies  
‹ DSP and I/O power supplies  
‹ Battery-powered applications  
‹ Telecommunications equipment  
‹ Data processing applications  
The SC4609 is an ideal choice for converting 3.3V, 5V or  
other low input supply voltages. It’s available in 12 pin  
MLP package.  
Typical Application Circuit  
Vin=2.7V - 5.5V  
C10  
C13  
C14  
22u  
22u  
220u  
D2  
1u  
C17  
M11  
R13  
1
R3  
U1  
R6  
1
12  
1
11  
10  
9
BST  
DRVH  
L1  
C3  
4.7u  
Vout=1.5V (as low as 0.5V*) / 12A  
VCC  
PHASE  
DRVL  
PGND  
AGND  
SS  
1.8u  
R5  
2
ISET  
C9  
1
C6  
C5  
C4  
3
8
COMP  
FSET  
VSENSE  
M2  
4.7n  
C16  
560pF  
2.2n  
330u  
22u  
C2  
4
7
22u  
R7  
10k  
C1  
5
6
R8  
200  
180p  
Css  
22u  
R1  
SC4609  
14.3k  
R9  
*External components can be modified to provide a Vout as low as 0.5V  
4.99k  
Revision: February 8, 2006  
1
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SC4609  
POWER MANAGEMENT  
Absolute Maximum Ratings  
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified  
in the Electrical Characteristics section is not implied.  
Parameter  
Symbol  
Maximum  
Units  
Supply Voltage (VCC)  
PGND  
6
V
V
A
±0.3  
±0.25  
Output Drivers (DRVH, DRVL) Currents  
Continuous  
Peak  
±1.00  
A
Inputs (VSENSE, COMP, FSET, ISET, SS)  
BST  
-0.3 to 6  
12  
V
V
PHASE  
-0.3 to 6  
-2 to 7  
-40 to +85  
-65 to +150  
+150  
V
PHASE Pulse tpulse < 50ns  
Operating Ambient Temperature Range  
Storage Temperature Range  
Maximum Junction Temperature  
Peak IR Reflow Temperature, 10 - 40s  
ESD Rating (Human Body Model)  
V
TA  
TSTG  
TJ  
°C  
°C  
°C  
°C  
kV  
TPKG  
ESD  
260  
4
All voltages with respect to AGND. Currents are positive into, negative out of the specified terminal.  
Electrical Characteristics  
Unless otherwise specified, VCC = 3.3V, CT = 270pF, TA = -40°C to 85°C, TA=TJ  
Note: (1). Guaranteed by design.  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
Overall  
Supply Voltage  
5.5  
15  
V
Supply Current, Sleep  
Supply Current, Operating  
VCC Turn-on Threshold  
VCC Turn-off Hysteresis  
Error Amplifier  
FSET = 0V  
VCC = 5.5V  
10  
2
µA  
mA  
V
3.75  
2.7  
TA = -40°C to 85°C  
350  
mV  
Input Voltage  
TA = 25°C  
0.495  
0.5  
0.5  
0.505  
(Internal Reference)  
V
VCC = 2.7V - 5.5V, TA = 25°C  
TA = -40°C to 85°C  
VSENSE = 0.5V  
0.4925  
0.4925  
0.5075  
0.5075  
VSENSE Bias Current  
Open Loop Gain (1)  
Unity Gain Bandwidth (1)  
2006 Semtech Corp.  
200  
90  
8
nA  
dB  
VCOMP = 0.5 to 2.5V  
MHz  
2
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SC4609  
POWER MANAGEMENT  
Electrical Characteristics (Cont.)  
Unless otherwise specified, VCC = 3.3V, CT = 270pF, TA = -40°C to 85°C, TA=TJ  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
Error Amplifier (Cont.)  
Slew Rate (1)  
2.4  
VCC - 0.3  
0.3  
V/µs  
V
VOUT High  
ICOMP = -5.5mA  
ICOMP = 5.5mA  
VCC - 0.5  
525  
VOUT Low  
0.45  
625  
Oscillator  
Initial Accuracy  
TA = 25°C  
575  
0.05  
0.02  
kHz  
%/V  
%/°C  
kHz  
Hz  
Voltage Stability  
TA = 25°C, VCC = 2.7V to 5.5V  
TA = -40°C to 85°C  
Temperature Coefficient  
Minimum Operation Frequency (1)  
Maximum Operation Frequency (1)  
Ramp Peak to Valley  
Ramp Peak Voltage  
Ramp Valley Voltage  
Sleep, Soft Start, Current Limit  
Sleep Threshold  
50  
1M  
1
V
1.3  
0.3  
V
V
Measured at FSET  
VSYNC = 0V  
75  
-55  
200  
mV  
µA  
Sleep Input Bias Current  
Programmable Soft Start Time (1)  
Soft Start Charge Current  
ISET Bias Current  
-1  
C = 20nF  
1.75  
-5.75  
-50  
ms  
µA  
TA = 25°C  
TJ = 25°C  
-45  
µA  
Temperature Coefficient of ISET  
Current Limit Blank Time (1)  
Gate Drive  
0.28  
130  
%/°C  
ns  
DRVH Minimum OFF Time  
Peak Source (DRVH)  
Peak Sink (DRVH)  
TA = 25°C, VSENSE = 0  
Vgs = 3.3V, ISOURCE = 100mA  
Vgs = 3.3V, ISINK = 100mA  
Vgs = 3.3V, ISOURCE = 100mA  
Vgs = 3.3V, ISINK = 100mA  
Vgs = 3.3V, COUT = 4.7nF  
Vgs = 3.3V, COUT = 4.7nF  
160  
2.7  
1.8  
2.2  
1.5  
35  
ns  
(1)  
Peak Source (DRVL)  
Peak Sink (DRVL)  
Output Rise Time  
ns  
ns  
ns  
Output Fall Time  
27  
Minimum Non-Overlap (1)  
40  
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SC4609  
POWER MANAGEMENT  
Pin Configuration  
Ordering Information  
Part Number(1)  
SC4609MLTRT(2)  
SC4609EVB  
Device  
TOP VIEW  
MLP-12  
BST DRVH PHASE  
Evaluation Board  
12  
11  
10  
Notes:  
VCC  
ISET  
1
2
3
9
8
7
DRVL  
PGND  
AGND  
(1) Only available in tape and reel packaging. A reel  
contains 3000 devices.  
(2) Lead free product. This product is fully WEEE and  
RoHS compliant.  
COMP  
4
5
6
FSET VSENSE SS  
(MLP12, 4x4)  
Pin Descriptions  
Pin #  
Pin Name  
Pin Function  
1
VCC  
Positive supply rail for the IC. Bypass this pin to GND with a 0.1 to 4.7µF low ESL/ESR  
ceramic capacitor.  
2
ISET  
The ISET pin is used to limit current in the high side MOSFET. The SC4609 uses the  
voltage across the VIN and ISET pins in order to set the current limit. The current limit  
threshold is set by the value of an external resistor (R3 in the Typical Application Circuit  
Diagram). Current limiting is performed by comparing the voltage drop across the sense  
resistor with the voltage drop across the drain to source resistance of the high side  
MOSFET during the MOSFET’s conduction period. The voltage drop across the drain to  
source resistance of the high side MOSFET is obtained from the VIN and PHASE pin.  
3
4
COMP  
FSET  
This is the output of the voltage error amplifier. The voltage at this output is inverted  
internally and connected to the non-inverting input of the PWM comparator. A lead-lag  
network from the COMP pin to the VSENSE pin compensates for the two pole LC filter  
characteristics inherent to voltage mode control. The lead-lag network is required in order  
to optimize the dynamic performance of the voltage mode control loop.  
The FSET pin is used to sets the PWM oscillator frequency through an external timing  
capacitor that is connected from the FSET pin to the GND pin. When the FSET is pulled  
and held below 75mV, its sleep mode operation is invoked. Sleep mode operation is  
invoked by clamping the FSET pin to a voltage below 75mV. The typical supply current  
during sleep mode is 10µA. The SC4609 can be operated in synchronous mode by placing  
a resistor in series between the timing capacitor and ground. The other terminal of the  
timing capacitor will remain connected to the FSET pin.  
5
6
VSENSE  
SS  
This pin is the inverting input of the voltage amplifier and serves as the output voltage  
feedback point for the Buck converter. VSENSE is compared to an internal reference value  
of 0.5V. VSENSE is hardwired to the output voltage when an output of 0.5V is desired.  
For higher output voltages, a resistor divider network is necessary (R7 and R9 in the Typical  
Application Circuit Diagram).  
Soft start. A capacitor to ground sets the soft start time. The soft start time is independent  
SS = 87.5 103 C.  
of switching frequency and is defined as  
Where C is the external  
capacitor in nF and soft start time in second.  
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SC4609  
POWER MANAGEMENT  
Pin Descriptions (Cont.)  
Pin #  
Pin Name  
Pin Function  
7
8
9
AGND  
PGND  
DRVL  
Analog ground.  
Power ground.  
DRVL drives the gate of the low side (synchronous rectifier) MOSFET. The output drivers  
are rated for 1A peak currents. The PWM circuitry provides complementary drive signals to  
the output stages. The cross conduction of the external MOSFETs is prevented by  
monitoring the voltage on the driver pins of the MOSFET pair in conjunction with a time  
delay optimized for FET turn-off characteristics.  
10  
PHASE  
The PHASE pin is used to limit current in the high side MOSFET. The SC4609 uses the  
voltage across the VIN and ISET pin in order to set the current limit. The current limit  
threshold is set by the value of an external resistor (R3 in the Typical Application Circuit  
Diagram). Current limiting is performed by comparing the voltage drop across the sense  
resistor with the voltage drop across the drain to source resistance of the high side  
MOSFET during the MOSFET’s conduction period. The voltage drop across the drain to  
source resistance of the high side MOSFET is obtained from the VIN and PHASE pin.  
11  
12  
DRVH  
BST  
DRVH drives the gate of the high side (main switch) MOSFET. The output drivers are rated  
for 1A peak currents. The PWM circuitry provides complementary drive signals to the  
output stages. The cross conduction of the external MOSFETs is prevented by monitoring  
the voltage on the driver pins of the MOSFET pair in conjunction with a time delay  
optimized for FET turn-off characteristics.  
This pin enables the converter to drive an N-Channel high side MOSFET. BST connects to  
the external charge pump circuit. The charge pump circuit boosts the BST pin voltage to a  
sufficient gate-to-source voltage level for driving the gate of the high side MOSFET.  
THERMAL PAD Pad for heatsinking purposes. Connect to ground plane using multiple vias. Not connected  
internally.  
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SC4609  
POWER MANAGEMENT  
Block Diagram  
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SC4609  
POWER MANAGEMENT  
Application Information  
Enable  
The maximum frequency of the external clock signal can  
be higher than the natural switching frequency by about  
10%.  
The SC4609 is enabled by applying a voltage greater than  
2.7 volts to the VCC pin. The SC4609 is disabled when  
VCC falls below 2.35 volts or when sleep mode opera-  
tion is invoked by clamping the FSET pin to a voltage  
below 75mV. 10µA is the typical current drawn through  
the VCC pin during sleep mode. During the sleep mode,  
the high side and low side MOSFETs are turned off and  
the internal soft start voltage is held low.  
FSET  
CFSET  
C
SC4609  
External  
Clock  
R
A
Signal  
1k  
56pF  
RSYNC  
100  
D
Oscillator  
Figure 1  
The FSET pin is used to set the PWM oscillator frequency  
through an external timing capacitor that is connected  
from the FSET pin to the GND pin. The resulting ramp  
waveform ion the FSET pin is a triangle at the PWM fre-  
quency with a peak voltage of 1.3V and a valley voltage  
of 0.3V. 200ns minimum OFF time for the top switch  
allows the bootstrap capacitor to be charged during each  
cycle. The capacitor tolerance adds to the accuracy of  
the oscillator frequency. The approximate operating fre-  
quency and soft start time are both determined by the  
value of the external timing capacitor as shown in Table  
1.  
UVLO  
When the FSET pin is not pulled and held below 75mV,  
the voltage on the Vcc pin determines the operation of  
the SC4609. As Vcc increases during start up, the UVLO  
block senses Vcc and keeps the high side and low side  
MOSFETs off and the internal soft start voltage low until  
Vcc reaches 2.7V. If no faults are present, the SC4609  
will initiate a soft start when Vcc exceeds 2.7V. A hyster-  
esis (350mV) in the UVLO comparator provides noise  
immunity during its start up.  
Soft Start  
External Timing  
Frequency (kHz)  
Capacitor Value (pF)  
The soft start function is required for step down control-  
lers to prevent excess inrush current through the DC bus  
during start up. Generally this can be done by sourcing a  
controlled current into a timing capacitor and then using  
the voltage across this capacitor to slowly ramp up the  
error amp reference. The closed loop creates narrow  
width driver pulses while the output voltage is low and  
allows these pulses to increase to their steady state duty  
cycle as the output voltage reaches its regulated value.  
With this, the inrush current from the input side is con-  
trolled. The duration of the soft start in the SC4609 is  
controlled by an external capacitor. SS, the startup time  
is difined as:  
120  
270  
470  
560  
1000  
575  
350  
295  
Table 1. Operating Frequency value Based on the  
Value of the External Timing Capacitor Placed Across  
the FSET and GND Pins  
Synchronous mode operation is invoked by using a sig-  
nal from an external clock. A low value resistor (100Ω  
typical) must be inserted in series with the timing capaci-  
tor between the timing capacitor and the GND pin. The  
other terminal of the timing capacitor will remain con-  
nected to the FSET pin. The transformed external clock  
signal is then connected to the junction of the external  
timing capacitor and the added resistor RSYNC as shown  
in Figure 1.  
SS = 87.5 103 C  
where, C is the value of the external capacitor in nF, and  
SS is the startup time in second.  
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SC4609  
POWER MANAGEMENT  
Application Information (Cont.)  
Over Current Protection  
A
B
VO nom  
The SC4609 detects over current conditions by sensing  
the voltage across the drain-to-source of the high side  
MOSFET. The SC4609 determines the high side MOS-  
FET current level by sensing the drain-to-source conduc-  
tion voltage across the high side MOSFET via the Vin (see  
the Typical Application Circuit on page 1) and PHASE pin  
during the high side MOSFET’s conduction period. This  
voltage value is then compared internally to a user pro-  
grammed current limit threshold. Note that user should  
place Kelvin sensing connections directly from the high  
side MOSFET source to the PHASE pin.  
0.7  
VOnom  
C
VO  
IMAX  
D
IO  
Figure 2. Over current protection characteristic of  
SC4609  
The current limit threshold is programmed by the user  
based on the RDS(on) of the high side MOSFET and the  
value of the external set resistor RSET (where RSET is  
represented by R3 in the applications schematics of this  
document). The SC4609 uses an internal current source  
to pull a 50µA current from the input voltage to the ISET  
pin through external resistor RSET.  
Power MOSFET Drivers  
The SC4609 has two drivers which are optimized for driv-  
ing external power N-Channel MOSFETs.. The driver block  
consists two 1 Amp drivers. DRVH drives the high side  
N-MOSFET (main switch), and DRVL drives the low side  
N-MOSFET (synchronous rectifier transistor).  
The output drivers also have gate drive non-overlap  
mechanism that provides a dead time between DRVH  
and DRVL transitions to avoid potential shoot through  
problems in the external MOSFETs. By using the proper  
design and the appropriate MOSFETs, the SC4609 is  
capable of driving a converter with up to 12A of output  
The current limit threshold resistor (RSET) value is calcu-  
lated using the following equation:  
IMAX RDS(ON)  
RSET  
=
50µA  
The RDS(ON) sensing used in the SC4609 has an addi-  
tional feature that enhances the performance of the over  
current protection. Because the RDS(ON) has a positive  
temperature coefficient, the 50µA current source has a  
positive coefficient of about 0.28%/C° providing first or-  
current. As shown in Figure 3, td1 the delay from the  
top MOSFET off to the bottom MOSFET on is adaptive by  
,
der correction for current sensing vs temperature. This detecting the voltage of the phase node. td2, the delay  
compensation depends on the high amount of thermal  
transferring that typically exists between the high side N-  
MOSFET and the SC4609 due to the compact layout of  
the power supply.  
from the bottom MOSFET off to the top MOSFET on is  
fixed, is 40ns for the SC4609. This control scheme guar-  
antees avoidance of cross conduction or shoot through  
between the upper and lower MOSFETs and also mini-  
mizes the conduction loss in the body diode of the bot-  
tom MOSFET for high efficiency applications.  
When the converter detects an over current condition (I  
> IMAX) as shown in Figure 2, the first action the SC4609  
takes is to enter the cycle by cycle protection mode (Point  
B to Point C), which responds to minor over current cases.  
Then the output voltage is monitored. If the over current  
and low output voltage (set at 70% of nominal output  
voltage) occur at the same time, the Hiccup mode op-  
eration (Point C to Point D) of the SC4609 is invoked  
and the internal soft start capacitor is discharged. This is  
like a typical soft start cycle:  
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SC4609  
POWER MANAGEMENT  
Application Information (Cont.)  
Ipp  
2
IPEAK = IOMAX  
+
TOP MOSFET Gate Drive  
BOTTOM MOSFET Gate Drive  
The power loss for the inductor includes its core loss and  
copper loss. If possible, the winding resistance should  
be minimized to reduce inductor’s copper loss. The core  
loss can be found in the manufacturer’s datasheet. The  
inductor’ copper loss can be estimated as follows:  
Ground  
Phase node  
td2  
td1  
PCOPPER = I2  
RWINDING  
LRMS  
Figure 3. Timing Waveforms for Gate Drives and Phase  
Node  
Where:  
LRMS is the RMS current in the inductor. This current can  
be calculated as follow is:  
I
Inductor Selection  
1
3
ILRMS = IOMAX 1+  
I2  
The factors for selecting the inductor include its cost,  
efficiency, size and EMI. For a typical SC4609 applica-  
tion, the inductor selection is mainly based on its value,  
saturation current and DC resistance. Increasing the in-  
ductor value will decrease the ripple level of the output  
voltage while the output transient response will be de-  
graded. Low value inductors offer small size and fast tran-  
sient responses while they cause large ripple currents,  
poor efficiencies and more output capacitance to smooth  
out the large ripple currents. The inductor should be able  
to handle the peak current without saturating and its  
copper resistance in the winding should be as low as  
possible to minimize its resistive power loss. A good trade-  
off among its size, loss and cost is to set the inductor  
ripple current to be within 15% to 30% of the maximum  
output current.  
Output Capacitor Selection  
Basically there are two major factors to consider in se-  
lecting the type and quantity of the output capacitors.  
The first one is the required ESR (Equivalent Series Re-  
sistance) which should be low enough to reduce the volt-  
age deviation from its nominal one during its load changes.  
The second one is the required capacitance, which should  
be high enough to hold up the output voltage. Before the  
SC4609 regulates the inductor current to a new value  
during a load transient, the output capacitor delivers all  
the additional current needed by the load. The ESR and  
ESL of the output capacitor, the loop parasitic inductance  
between the output capacitor and the load combined  
with inductor ripple current are all major contributors to  
the output voltage ripple. Surface mount speciality poly-  
mer aluminum electrolytic chip capacitors in UE series  
from Panasonic provide low ESR and reduce the total  
capacitance required for a fast transient response.  
POSCAP from Sanyo is a solid electrolytic chip capacitor  
that has a low ESR and good performance for high fre-  
quency with a low profile and high capacitance. Above  
mentioned capacitors are recommended to use in  
SC4609 application.  
The inductor value can be determined according to its  
operating point and the switching frequency as follows:  
VOUT (V VOUT  
)
IN  
L =  
V
fs I IOMAX  
IN  
Where:  
fs = switching frequency and  
I = ratio of the peak to peak inductor current to the  
maximum output load current.  
The peak to peak inductor current is:  
Input Capacitor Selection  
Ipp = ∆IIOMAX  
The input capacitor selection is based on its ripple cur-  
rent level, required capacitance and voltage rating. This  
capacitor must be able to provide the ripple current by  
the switching actions. For the continuous conduction  
mode, the RMS value of the input capacitor can be cal-  
culated from:  
After the required inductor value is selected, the proper  
selection of the core material is based on the peak in-  
ductor current and efficiency requirements. The core  
must be able to handle the peak inductor current IPEAK  
without saturation and produce low core loss during the  
high frequency operation is:  
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SC4609  
POWER MANAGEMENT  
Application Information (Cont.)  
Where:  
VOUT (V VOUT  
)
VI2N  
IB = the boost current and  
VD= discharge ripple voltage.  
ICIN  
= IOMAX  
(RMS)  
IN  
This current gives the capacitor’s power loss as follows:  
With fs = 300kH, VD=0.3V and IB=50mA, the required  
capacitance for the boost capacitor is:  
PCIN = I2  
RCIN(ESR)  
CIN(RMS)  
IB  
VD fs  
1
0.05  
0.3 300k  
1
Cboost  
=
Dmax  
=
0.95 = 528nF  
This capacitor’s RMS loss can be a significant part of the  
total loss in the converter and reduce the overall con-  
verter efficiency. The input ripple voltage mainly depends  
on the input capacitor’s ESR and its capacitance for a  
given load, input voltage and output voltage. Assuming  
that the input current of the converter is constant, the  
required input capacitance for a given voltage ripple can  
be calculated by:  
Power MOSFET Selection  
The SC4609 can drive an N-MOSFET at the high side  
and an N-MOSFET synchronous rectifier at the low side.  
The use of the high side N-MOSFET will significantly re-  
duce its conduction loss for high current. For the top  
MOSFET, its total power loss includes its conduction loss,  
switching loss, gate charge loss, output capacitance loss  
and the loss related to the reverse recovery of the bot-  
tom diode, shown as follows:  
D (1D)  
fs (V IOMAX RCIN  
CIN = IOMAX  
)
I
(ESR)  
Where:  
D = VO/VI , duty ratio and  
VI = the given input voltage ripple.  
ITOP _PEAK V fs  
I
PTOP _TOTAL = I2  
RTOP_ON  
+
TOP _RMS  
V
Because the input capacitor is exposed to the large surge  
current, attention is needed for the input capacitor. If  
tantalum capacitors are used at the input side of the  
converter, one needs to ensure that the RMS and surge  
ratings are not exceeded. For generic tantalum capaci-  
tors, it is wise to derate their voltage ratings at a ratio of  
2 to protect these input capacitors.  
GATE RG  
(QGD + QGS2 ) + QGT VGATE fs + (QOSS + Qrr ) V fs  
I
Where:  
RG = gate drive resistor,  
QGD = the gate to drain charge of the top MOSFET,  
QGS2 = the gate to source charge of the top MOSFET,  
QGT = the total gate charge of the top MOSFET,  
QOSS = the output charge of the top MOSFET and  
Qrr = the reverse recovery charge of the bottom diode.  
Boost Capacitor Selection  
The boost capacitor selection is based on its discharge  
ripple voltage, worst case conduction time and boost  
current. The worst case conduction time Tw can be esti-  
mated as follows:  
For the top MOSFET, it experiences high current and high  
voltage overlap during each on/off transition. But for the  
bottom MOSFET, its switching voltage is the bottom  
diode’s forward drop during its on/off transition. So the  
switching loss for the bottom MOSFET is negligible. Its  
total power loss can be determined by:  
1
fs  
Tw =  
Dmax  
Where:  
fs = the switching frequency and  
Dmax = maximum duty ratio.  
PBOT _TOTAL = I2  
RBOT _ON + QGB VGATE fs +ID _AVG VF  
BOT _RMS  
The required minimum capacitance for boost capacitor  
will be:  
Where:  
QGB = the total gate charge of the bottom MOSFET and  
VF = the forward voltage drop of the bottom diode.  
IB  
VD  
Cboost  
=
TW  
2006 Semtech Corp.  
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SC4609  
POWER MANAGEMENT  
Application Information (Cont.)  
For a low voltage and high output current application such  
as the 3.3V/1.5V@12A case, the conduction loss is of-  
ten dominant and selecting low RDS(ON) MOSFETs will no-  
ticeably improve the efficiency of the converter even  
though they give higher switching losses.  
The gate charge loss portion of the top/bottom MOSFET’s  
total power loss is derived from the SC4609. This gate  
charge loss is based on certain operating conditions (fs,  
VGATE, and IO).  
The thermal estimations have to be done for both  
MOSFETs to make sure that their junction temperatures  
do not exceed their thermal ratings according to their  
total power losses PTOTAL, ambient temperature TA and their  
thermal resistance RθJA as follows:  
Figure 4. Compensation network provides 3 poles and  
2 zeros.  
For voltage mode step down applications as shown in  
Figure 4, the power stage transfer function is:  
PTOTAL  
TJ(max) < TA +  
RθJA  
s
1+  
1
RC C4  
1+ s + s2L1C4  
GVD (s) = V  
I
L1  
R
Loop Compensation Design  
For a DC/DC converter, it is usually required that the  
converter has a loop gain of a high cross-over frequency  
for fast load response, high DC and low frequency gain  
for low steady state error, and enough phase margin for  
its operating stability. Often one can not have all these  
properties at the same time. The purpose of the loop  
compensation is to arrange the poles and zeros of the  
compensation network to meet the requirements for a  
specific application.  
Where:  
R = load resistance and  
RC = C4’s ESR.  
The compensation network will have the characteristic  
as follows:  
s
ωZ1  
s
s
ωZ2  
s
1+  
1+  
1+  
1+  
ωI  
GCOMP (s) =  
s
ωP1  
ωP2  
The SC4609 has an internal error amplifier and requires  
the compensation network to connect among the COMP  
pin and VSENSE pin, GND, and the output as shown in  
Figure 4. The compensation network includes C1, C2,  
R1, R7, R8 and C9. R9 is used to program the output  
voltage according to  
Where  
1
ωI =  
R7 (C1 + C2 )  
R7  
R9  
1
VO = 0.5 (1+  
)
ωZ1  
=
R1 C2  
1
ωZ2  
=
(R7 + R8 ) C9  
C1 + C2  
=
ωP1  
R1 C1 C2  
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SC4609  
POWER MANAGEMENT  
Application Information (Cont.)  
1
Layout Guidelines  
ωP2  
=
R8 C9  
In order to achieve optimal electrical, thermal and noise  
performance for high frequency converters, special at-  
tention must be paid to the PCB layouts. The goal of lay-  
out optimization is to identify the high di/dt loops and  
minimize them. The following guideline should be used to  
ensure proper functions of the converters.  
After the compensation, the converter will have the fol-  
lowing loop gain:  
s
1+  
1
VM  
s
s
ωZ2  
s
1
ωI  
V
1+  
1+  
1+  
1+  
I
ωZ1  
s
RC C4  
1+ s + s2L1C  
T(s) = GPWM GCOMP(s) GVD(s) =  
L1  
R
s
ωP1  
ωP2  
1. A ground plane is recommended to minimize noises  
and copper losses, and maximize heat dissipation.  
2. Start the PCB layout by placing the power compo-  
nents first. Arrange the power circuit to achieve a  
clean power flow route. Put all the connections on  
one side of the PCB with wide copper filled areas if  
possible.  
Where:  
GPWM = PWM gain  
VM = 1.0V, ramp peak to valley voltage of SC4609  
The design guidelines for the SC4609 applications are  
as following:  
3. The Vcc bypass capacitor should be placed next to  
the Vcc and GND pins.  
4. The trace connecting the feedback resistors to the  
output should be short, direct and far away from the  
noise sources such as switching node and switching  
components.  
5. Minimize the traces between DRVH/DRVL and the  
gates of the MOSFETs to reduce their impedance to  
drive the MOSFETs.  
6. Minimize the loop including input capacitors, top/bot-  
tom MOSFETs. This loop passes high di/dt current.  
Make sure the trace width is wide enough to reduce  
copper losses in this loop.  
1. Set the loop gain crossover corner frequency ω C  
for given switching corner frequency ωS = 2pfs,  
2. Place an integrator at the origin to increase DC  
and low frequency gains.  
3. Select ωZ1 and ωZ2 such that they are placed near  
ωO to damp the peaking and the loop gain has a  
-20dB/dec rate to go across the 0dB line for  
obtaining a wide bandwidth.  
4. Cancel the zero from C4’s ESR by a compensator  
pole ωP1 (ωP1 = ωESR = 1/( RCC4)).  
5. Place a high frequency compensator pole ωp2 (ωp2  
= πfs) to get the maximum attenuation of the switch-  
ing ripple and high frequency noise with the adequate  
phase lag at ωC.  
7. ISET and PHASE connections to the top MOSFET for  
current sensing must use Kelvin connections.  
8. Maximize the trace width of the loop connecting the  
inductor, bottom MOSFET and the output capacitors.  
The compensated loop gain will be as given in Figure 5:  
T
9. Connect the ground of the feedback divider and the  
compensation components directly to the GND pin  
of the SC4609 by using a separate ground trace.  
Then connect this pin to the ground of the output  
capacitor as close as possible  
ω
Z1  
Loop gain  
-
ω
o
ω
Z2  
Gvd  
0dB  
c
ω
p1  
ω
p2  
ω
Power stage  
ωESR  
-
Figure 5. Asymptotic diagrams of power stage and its  
loop gain  
2006 Semtech Corp.  
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SC4609  
POWER MANAGEMENT  
Application Information (Cont.)  
Design Example 1. 3V to1.5V @10A application with SC4609  
Vin=3V - 5.5V  
C10  
C13  
22u  
C14  
22u  
D2  
1u  
220u  
C17  
M1  
R13  
1
R3  
U1  
R6  
12  
1
11  
10  
9
BST  
DRVH  
PHASE  
DRVL  
PGND  
AGND  
SS  
L1  
0
C3  
4.7u  
Vout = 1.5V/10A  
VCC  
2.3u  
R5  
2
ISET  
0
C4  
22u  
C5  
22u  
C7  
3
8
C9  
COMP  
FSET  
VSENSE  
M2  
C16  
470pF  
330u  
4
7
C2  
C1  
R7  
5.76k  
8.2n  
5
6
1.8n  
2.2n  
R8  
107  
SC4609  
Css  
22n  
R1  
14.3k  
R9  
2.87k  
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SC4609  
POWER MANAGEMENT  
Bill of Materials  
Item  
1
Qty  
1
Reference  
Value  
Part No./Manufacturer  
C1  
1.8nF  
2
1
C2  
2.2nF  
3
1
C17  
1uF  
4
4
C4,C5, C13, C14  
22uF, 1206  
TDK P/N: C3225X5R0J226M  
Sanyo P/N: 6TPB330ML  
5
1
C7  
330uF, 2870  
8.2nF  
6
1
C9  
7
1
C16  
D2  
470pF  
8
1
MBR0520LT1  
ON Semi P/N: MBR0520LT1  
Cooper Electronic  
P/N: HC1-2R3  
9
1
L1  
2.3uH  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
2
1
1
1
1
1
1
1
1
1
1
M1, M2  
R1  
Powerpack, SO-8  
14.3K  
Vishay P/N: Si7882DP  
R3  
1.33K  
R7  
5.76K  
R8  
107  
R9  
2.87K  
R13  
C3  
1
4.7uF, 0805  
220uF, 2870  
22nF  
C10  
Css  
U1  
Sanyo P/N: 6TPB220ML  
SC4609  
Semtech P/N: SC4609IMLTRT  
Unless specified, all resistors have 1% precision with 0603 package.  
Resistors are +/-1% and all capacitors are +/-20%  
2006 Semtech Corp.  
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SC4609  
POWER MANAGEMENT  
PCB Layout  
COMPONENT SIDE (TOP)  
COMPONENT SIDE (BOTTOM)  
2006 Semtech Corp.  
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SC4609  
POWER MANAGEMENT  
PCB Layout (Cont.)  
(BOTTOM)  
(TOP)  
(INTER LAYER 2)  
(INTER LAYER 1)  
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SC4609  
POWER MANAGEMENT  
Outline Drawing - MLP-12  
DIMENSIONS  
INCHES MILLIMETERS  
DIM  
A
MIN NOM MAX MIN NOM MAX  
A
D
B
E
-
-
-
-
.031  
.040 0.80  
.002 0.00  
1.00  
0.05  
-
A1 .000  
-
(.008)  
-
-
(0.20)  
A2  
b
.010 .012 .014 0.25 0.30 0.35  
.153 .157 .161 3.90 4.00 4.10  
PIN 1  
INDICATOR  
D
D1 .074 .085 .089 1.90 2.15 2.25  
(LASER MARK)  
E
.153 .157 .161 3.90 4.00 4.10  
E1 .074 .085 .089 1.90 2.15 2.25  
e
.031 BSC  
0.80 BSC  
L
N
.018 .022 .026 0.45 0.55 0.65  
12  
12  
aaa  
.003  
.004  
0.08  
0.10  
bbb  
A2  
A
SEATING  
PLANE  
aaa C  
A1  
C
D1  
LxN  
E/2  
2
1
E1  
N
bxN  
bbb  
C A B  
e
D/2  
NOTES:  
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).  
2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.  
2006 Semtech Corp.  
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SC4609  
POWER MANAGEMENT  
Land Pattern - MLP-12  
K
DIMENSIONS  
DIM  
INCHES  
MILLIMETERS  
(.148)  
.106  
.091  
.091  
.031  
.016  
.041  
.189  
(3.75)  
2.70  
2.30  
2.30  
0.80  
0.40  
1.05  
4.80  
C
G
H
K
P
X
Y
Z
2x Z  
H
2x G  
Y
2x (C)  
X
P
NOTES:  
1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.  
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR  
COMPANY'S MANUFACTURING GUIDELINES ARE MET.  
Contact Information  
Semtech Corporation  
Power Management Products Division  
200 Flynn Road, Camarillo, CA 93012  
Phone: (805)498-2111 FAX (805)498-3804  
2006 Semtech Corp.  
18  
www.semtech.com  

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