ST-13007 [SEMTECH]
NPN Silicon Transistor; NPN硅晶体管![ST-13007](http://pdffile.icpdf.com/pdf1/p00129/img/icpdf/ST-13_712542_icpdf.jpg)
型号: | ST-13007 |
厂家: | ![]() |
描述: | NPN Silicon Transistor |
文件: | 总2页 (文件大小:145K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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ST 13007
NPN Silicon Transistor
for high voltage, high-speed power switching application
TO-220 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
700
V
V
400
9
V
8
A
O
Total Power Dissipation (Ta = 25 C)
Ptot
Ptot
TJ
2
80
W
W
O
Total Power Dissipation (TC = 25 C)
O
C
Junction Temperature
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
10
Typ.
-
Max.
70
Unit
DC Current Gain
at VCE = 5 V, IC = 2 A
hFE
-
µA
µA
V
Collector Cutoff Current
at VCB = 700 V
ICBO
-
-
-
-
-
-
-
-
100
Emitter Cutoff Current
at VEB = 9 V
IEBO
-
700
400
9
100
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
-
-
Collector Emitter Breakdown Voltage
at IC = 10 mA
V
Emitter Base Breakdown Voltage
at IE = 1 mA
-
V
Collector Emitter Saturation Voltage
at IC = 5 A, IB = 1 A
-
2
V
Base Emitter Saturation Voltage
at IC = 5 A, IB = 1 A
-
1.6
V
Current Gain Bandwidth Product
at VCE = 10 V, IC = 0.5 A
fT
4
-
-
-
-
MHz
pF
Collector Base Capacitance
at VCB = 10 V, f = 0.1 MHz
Ccb
110
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/04/2007
ST 13007
TO-220 PACKAGE OUTLINE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/04/2007
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