ST13002T [SEMTECH]
NPN Silicon Power Transistors; NPN硅功率晶体管
| 型号： | ST13002T |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Power Transistors |
| 文件： | 总2页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 13002T / ST 13003T
NPN Silicon Power Transistors
These devices are designed for high-voltage,
high-speed power switching inductive circuits
where fall time is critical.
They are particularly suited for 115 and 220V
SWITCHMODE applications such as Switching
Regulator’s, Inverters, Motor Controls, Solenoid /
Relay drivers and Deflection circuits.
E
C
B
TO-126 Plastic Package
Value
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Unit
ST13002T ST13003T
Collector Emitter Voltage
Collector Emitter Voltage
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
300
600
400
700
V
V
Emitter Base Voltage
9
V
A
Collector Current - Continuous
Collector Current - Peak 1)
Base Current - Continuous
Base Current - Peak 1)
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
A
A
Emitter Current - Continuous
Emitter Current - Peak 1)
IEM
O
Total Power Dissipation @ TA = 25 C
W
PD
O
O
Derate above 25 C
mW/ C
O
Total Power Dissipation @ TC = 25 C
W
PD
O
O
Derate above 25 C
320
mW/ C
O
Operating and Storage Junction Temperature Range
Thermal Resistance ,Junction to Ambient
Thermal Resistance ,Junction to Case
TJ, Ts
-65 to +150
89
C
O
Rθ
C/W
JA
O
Rθ
3.12
C/W
JC
1)
Pulse Test: Pulse Width=5ms, Duty Cycle≤10%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/04/2006
ST 13002T / ST 13003T
O
Characteristics at Ta = 25 C
Parameter
DC Current Gain
Symbol
Min.
Typ.
Max.
Unit
at VCE = 2 V, IC = 0.5 A
at VCE = 2 V, IC = 1 A
hFE
hFE
8
5
-
-
40
25
-
-
Collector Emitter Sustaining Voltage
at IC = 10 mA
ST13002T
ST13003T
VCEO(sus)
VCEO(sus)
300
400
-
-
-
-
V
V
at IC=10mA
Collector Cutoff Current
at VCEV = Rated Value, VBE(off) = 1.5 V
Emitter Cutoff Current
at VEB = 9 V
ICEV
-
-
-
-
1
1
mA
mA
IEBO
Collector Emitter Saturation Voltage
at IC = 0.5 A, IB = 0.1 A
at IC = 1 A, IB = 0.25 A
at IC = 1.5 A, IB = 0.5 A
VCE(sat)
VCE(sat)
VCE(sat)
-
-
-
-
-
-
0.5
1
V
V
V
3
Base Emitter Saturation Voltage
at IC = 0.5 A, IB = 0.1 A
VBE(sat)
VBE(sat)
-
-
-
-
1
V
V
1.2
at IC = 1 A, IB = 0.25 A
Current Gain Bandwidth Product
fT
4
-
10
21
-
-
MHz
pF
at VCE = 10 V, IC = 100 mA, f = 1 MHz
Output Capacitance
Cob
at VCB = 10 V, f = 0.1 MHz
Delay Time
td
tr
-
-
-
-
-
-
-
-
0.1
1
µs
µs
µs
µs
µs
µs
µs
(VCC = 125 V, IC = 1 A,
Rise Time
-
IB1 = IB2 = 0.2 A, tp = 25 µs,
Storage Time
Fall Time
ts
tf
-
4
Duty Cycle≤1%)
-
0.7
4
Storage Time
Crossover Time
Fall Time
tsv
tc
tfi
-
-
(IC = 1 A,Vclamp = 300 V,
IB1 = 0.2 A,VBE(off) = 5 V,
0.75
-
O
TC = 100 C)
0.15
1) Pulse Test: Pulse Width=300μs, Duty Cycle≤2%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/04/2006
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