ST2N7000 [SEMTECH]

Small Signal MOSFET; 小信号MOSFET
ST2N7000
型号: ST2N7000
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

Small Signal MOSFET
小信号MOSFET

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中文:  中文翻译
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ST 2N7000  
Small Signal MOSFET  
200mAmps, 60 Volts  
N-Channel  
1. Source 2.Gate 3.Drain  
TO-92 Plastic Package  
Weight approx. 0.19g  
Absolute Maximum Ratings  
Rating  
Symbol  
VDSS  
Value  
60  
Unit  
V
Drain Source Voltage  
Drain-Gate Voltage (RGS=1M)  
Gate-source Voltage  
- Continuous  
VDGR  
60  
V
VGS  
±20  
±40  
V
- Non-repetitive (tp50μs)  
Drain Current  
VGSM  
Vpk  
- Continuous  
ID  
200  
500  
350  
mA  
mA  
- Pulsed  
IDM  
O
Total Power Dissipation @ TC=25 C  
mW  
PD  
O
O
Derate above 25 C  
2.8  
mW/ C  
O
C
Junction Temperature  
Tj  
150  
O
C
Storage Temperature Range  
TS  
-55 to +150  
Thermal Characteristics  
Characteristic  
Symbol  
RθJA  
Value  
357  
Unit  
O
Thermal Resistance, Junction to Ambient  
C/W  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 26/08/2005  
ST 2N7000  
O
Characteristics at TC=25 C  
Characteristic  
Symbol  
Min.  
60  
Typ.  
-
Max.  
-
Unit  
V
Off Characteristics  
Drain-Source Breakdown Voltage  
V(BR)DSS  
at VGS=0, ID=10μA  
Zero Gate Voltage Drain Current  
at VDS=48V, VGS=0  
-
-
1
1
μA  
IDSS  
-
-
O
mA  
at VDS=48V, VGS=0, TJ=125 C  
Gate-Body Leakage Current, Forward  
at VGSF=15V, VDS=0  
IGSSF  
-
-
-
-
10  
nA  
nA  
Gate-Body Leakage Current, Reverse  
at VGSR=-15V, VDS=0  
IGSSR  
-10  
On Characteristics1)  
Gate Threshold Voltage  
VGS(th)  
0.8  
-
3
V
at VDS= VGS, ID=1mA  
Static Drain-Source On-Resistance  
at VGS=10V, ID=500mA  
at VGS=4.5V, ID=75mA  
Drain-Source On-Voltage  
at VGS=10V, ID=500mA  
at VGS=4.5V, ID=75mA  
On-State Drain Current  
at VGS=4.5V, VDS=10V  
Forward Transconductance  
at VDS=10V, ID=200mA  
rDS(on)  
Ohm  
-
-
-
-
5
6
VDS(on)  
V
-
-
-
-
2.5  
0.45  
ID(on)  
75  
-
-
-
-
mA  
gfs  
100  
µmhos  
Dynamic Characteristics  
Input Capacitance  
at VDS=25V  
Ciss  
Coss  
Crss  
-
-
-
-
-
-
60  
25  
5
pF  
Output Capacitance  
VGS=0  
Reverse Transfer Capacitance  
f=1MHz  
Switching Characteristics1)  
at VDD=15V, ID=500mA,  
RG=25, RL=30Ω  
Turn-On Delay Time  
Turn-Off Delay Time  
ton  
toff  
-
-
-
-
10  
10  
ns  
ns  
Vgen=10V  
1) Pulse Test: Pulse Width300μs, Duty Cycle2%.  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 26/08/2005  

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