ST2N7000 [SEMTECH]
Small Signal MOSFET; 小信号MOSFET![ST2N7000](http://pdffile.icpdf.com/pdf1/p00142/img/icpdf/ST2N7_785132_icpdf.jpg)
型号: | ST2N7000 |
厂家: | ![]() |
描述: | Small Signal MOSFET |
文件: | 总2页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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ST 2N7000
Small Signal MOSFET
200mAmps, 60 Volts
N-Channel
1. Source 2.Gate 3.Drain
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings
Rating
Symbol
VDSS
Value
60
Unit
V
Drain Source Voltage
Drain-Gate Voltage (RGS=1MΩ)
Gate-source Voltage
- Continuous
VDGR
60
V
VGS
±20
±40
V
- Non-repetitive (tp≤50μs)
Drain Current
VGSM
Vpk
- Continuous
ID
200
500
350
mA
mA
- Pulsed
IDM
O
Total Power Dissipation @ TC=25 C
mW
PD
O
O
Derate above 25 C
2.8
mW/ C
O
C
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
-55 to +150
Thermal Characteristics
Characteristic
Symbol
RθJA
Value
357
Unit
O
Thermal Resistance, Junction to Ambient
C/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/08/2005
ST 2N7000
O
Characteristics at TC=25 C
Characteristic
Symbol
Min.
60
Typ.
-
Max.
-
Unit
V
Off Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
at VGS=0, ID=10μA
Zero Gate Voltage Drain Current
at VDS=48V, VGS=0
-
-
1
1
μA
IDSS
-
-
O
mA
at VDS=48V, VGS=0, TJ=125 C
Gate-Body Leakage Current, Forward
at VGSF=15V, VDS=0
IGSSF
-
-
-
-
10
nA
nA
Gate-Body Leakage Current, Reverse
at VGSR=-15V, VDS=0
IGSSR
-10
On Characteristics1)
Gate Threshold Voltage
VGS(th)
0.8
-
3
V
at VDS= VGS, ID=1mA
Static Drain-Source On-Resistance
at VGS=10V, ID=500mA
at VGS=4.5V, ID=75mA
Drain-Source On-Voltage
at VGS=10V, ID=500mA
at VGS=4.5V, ID=75mA
On-State Drain Current
at VGS=4.5V, VDS=10V
Forward Transconductance
at VDS=10V, ID=200mA
rDS(on)
Ohm
-
-
-
-
5
6
VDS(on)
V
-
-
-
-
2.5
0.45
ID(on)
75
-
-
-
-
mA
gfs
100
µmhos
Dynamic Characteristics
Input Capacitance
at VDS=25V
Ciss
Coss
Crss
-
-
-
-
-
-
60
25
5
pF
Output Capacitance
VGS=0
Reverse Transfer Capacitance
f=1MHz
Switching Characteristics1)
at VDD=15V, ID=500mA,
RG=25Ω, RL=30Ω
Turn-On Delay Time
Turn-Off Delay Time
ton
toff
-
-
-
-
10
10
ns
ns
Vgen=10V
1) Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/08/2005
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