ST8050U [SEMTECH]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管


型号：	ST8050U
厂家：	SEMTECH CORPORATION
描述：	NPN Silicon Epitaxial Planar Transistor NPN硅外延平面晶体管晶体晶体管
文件：	总2页 (文件大小：148K)
中文：	中文翻译
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ST 8050U

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications.

Especially suitable for AF-driver stages

and low power output stages.

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

1.5

Power Dissipation

P_tot

T_j

625

Junction Temperature

Storage Temperature Range

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 1 V, I_C= 5 mA

at V_CE= 1 V, I_C= 100 mA

h_FE

120

160

Current Gain Group C

200

300

at V_CE= 1 V, I_C= 800 mA

Collector Base Cutoff Current

at V_CB= 35 V

I_CBO

I_EBO

100

Emitter Base Cutoff Current

at V_EB= 6 V

100

Collector Base Breakdown Voltage

at I_C= 100 µA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

V_BE(sat)

V_BE

Collector Emitter Breakdown Voltage

at I_C= 2 mA

Emitter Base Breakdown Voltage

at I_E= 100 µA

Collector Emitter Saturation Voltage

at I_C= 800 mA, I_B= 80 mA

0.5

1.2

Base Emitter Saturation Voltage

at I_C= 800 mA, I_B= 80 mA

Base Emitter Voltage

at I_C= 10 mA, V_CE= 1 V

Gain Bandwidth Product

at V_CE= 10 V, I_C= 50 mA

f_T

100

MHz

Collector Base Capacitance

at V_CB= 10 V, f = 1 MHz

C_OB

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 19/09/2008

ST 8050U

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 19/09/2008

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