ST9013 [SEMTECH]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管


型号：	ST9013
厂家：	SEMTECH CORPORATION
描述：	NPN Silicon Epitaxial Planar Transistor NPN硅外延平面晶体管晶体晶体管
文件：	总2页 (文件大小：243K)
中文：	中文翻译
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ST 9013

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially

suitable for AF-driver stages and low power output

stages.

The transistor is subdivided into three groups, G,

H and I, according to its DC current gain. As

complementary type the PNP transistor 9012 is

recommended.

1. Emitter 2. Base 3. Collector

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

500

Collector Current

Power Dissipation

P_tot

625

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at V_CE= 1 V, I_C= 50 mA

Current Gain Group

h_FE

110

177

250

183

250

380

at V_CE= 1 V, I_C= 500 mA

Collector Base Cutoff Current

at V_CB= 35 V

Emitter Base Cutoff Current

at V_EB= 5 V

Collector Bae Breakdown Voltage

at I_C= 100 μA

Collector Emitter Breakdown Voltage

at I_C= 1 mA

I_CBO

I_EBO

100

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

V_BE(sat)

V_BE

Emitter Base Breakdown Voltage

at I_E= 100 μA

Collector Emitter Saturation Voltage

at I_C= 500 mA, I_B= 50 mA

Base Emitter Saturation Voltage

at I_C= 500 mA, I_B= 50 mA

Base Emitter Voltage

at V_CE= 1 V, I_C= 100 mA

Gain Bandwidth Product

at V_CE= 6 V, I_C= 20 mA

0.6

1.2

f_T

100

MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 19/03/2009

ST 9013

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 19/03/2009

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