ST9015 [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | ST9015 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 9015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, A, B,
C and D, according to its DC current gain. As
complementary type the NPN transistor ST 9014
is recommended.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-VCBO
-VCEO
-VEBO
-IC
50
V
V
45
5
100
V
mA
mW
Power Dissipation
Ptot
450
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
Current Gain Group
A
B
C
D
hFE
hFE
hFE
hFE
60
150
300
600
800
-
-
-
100
200
400
Collector Base Cutoff Current
at -VCB = 50 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-ICBO
-IEBO
-
-
50
nA
nA
V
50
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
50
45
5
-
-
V
Emitter Base Breakdown Voltage
at -IE = 100 µA
-
0.65
1
V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Gain Bandwidth Product
at -VCE = 10 V, -IC = 10 mA
Output Capacitance
-
V
-
V
100
-
-
MHz
pF
COB
7
at -VCB = 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2008
ST 9015
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2008
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