ST9018 [SEMTECH]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
ST9018
型号: ST9018
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管
文件: 总2页 (文件大小:129K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ST 9018  
NPN Silicon Epitaxial Planar Transistor  
for AM/FM amplifier and local oscillator of  
FM/VHF tuner applications.  
The transistor is subdivided into six groups, D,  
E, F, G, H and I, according to its DC current  
gain.  
On special request, these transistors can be  
manufactured in different pin configurations.  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
30  
Unit  
V
15  
V
5
V
Collector Current  
50  
mA  
Power Dissipation  
Ptot  
400  
150  
mW  
O
C
Junction Temperature  
Tj  
O
C
Storage Temperature Range  
TS  
-55 to +150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
at VCE = 5 V, IC = 1 mA  
Current Gain Group  
D
E
F
G
H
I
28  
39  
54  
72  
97  
-
-
-
-
-
-
45  
60  
80  
108  
146  
198  
-
-
-
-
-
-
132  
Collector Base Breakdown Voltage  
at IC = 100 µA  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
30  
15  
5
-
-
-
V
V
Collector Emitter Breakdown Voltage  
at IC = 1 mA  
-
Emitter Base Breakdown Voltage  
at IE = 100 µA  
-
-
-
V
Collector Cutoff Current  
at VCB = 12 V  
-
50  
0.5  
1.7  
-
nA  
V
Collector Emitter Saturation Voltage  
at IC = 10 mA, IB = 1 mA  
VCE(sat)  
CCBO  
-
-
Collector Base Capacitance  
at VCB = 10 V, f = 1 MHz  
-
1.3  
1100  
pF  
MHz  
Gain Bandwidth Product  
at VCE = 5 V, IC = 5 mA  
fT  
700  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 23/12/2005  
ST 9018  
STATIC CHARACTERISTIC  
DC CURRENT GAIN  
1000  
500  
10  
9
IB=90  
IB=80  
IB=70  
A
A
A
VCE=5V  
8
7
300  
100  
IB=60  
IB=50  
A
A
6
5
4
IB=40  
A
50  
30  
3
2
IB=30  
IB=20  
IB=10  
A
A
A
1
0
10  
0.5  
1
3
5
10  
30  
0
1
2
3
4
5
6
10  
7
8
9
VCE(V),COLLECTOR-EMITTER VOLTAGE  
IC(mA),COLLECTOR CURRENT  
BASE-EMITTER SATURATION VOLTAGE  
COLLECTOR-EMITTER SATURATION VOLTAGE  
CURRENT GAIN-BANDWIDTH PRODUCT  
VCE=5V  
2000  
10  
5
IC=10IB  
1000  
3
1
VBE(sat)  
500  
300  
0.5  
0.3  
0.1  
VCE(sat)  
0.05  
0.03  
100  
0.01  
0.1  
0.3 0.5  
1
3
5
10  
30  
0.1  
1
3
5
10  
30  
0.3  
0.5  
IC(mA),COLLECTOR CURRENT  
IC(mA),COLLECTOR CURRENT  
OUTPUT CAPACITANCE  
2.4  
2.0  
f=1MHz  
IE=0  
1.6  
1.2  
0.8  
0.4  
0
1
3
5
10  
30 50  
100  
VCB(V),COLLECTOR-BASE VOLTAGE  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 23/12/2005  

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