ZM-PTZ4.3B [SEMTECH]
SILICON EPITAXIAL PLANAR ZENER DIODES; 硅外延平面齐纳二极管
| 型号： | ZM-PTZ4.3B |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR ZENER DIODES |
| 文件： | 总3页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZM-PTZ3.6B ~ ZM-PTZ36B
SILICON EPITAXIAL PLANAR ZENER DIODES
LL-41
Features
1) Small surface mounting type
2) 1W of power can be obtained despite compact size
3) High surge withstand level
Applications
1) Voltage regulation and voltage limiting
2) Voltage surge absorption
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Ptot
Value
1
Unit
W
Power Dissipation 1)
Junction Temperature
Storage Temperature Range
Tj
150
OC
OC
TS
-55 to +150
1) Mounting density of other power components should be taken into consideration when laying out the pattern.
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
Zener Voltage Range
Operating Resistance
Reverse current
IR (uA)
Vz (V)
TYPE
Zz (Ω)
IZ
IZ
VR
Min.
Max.
Max.
Max.
(mA)
(mA)
(V)
1
1
1
1
1
1.5
3
3.5
4
5
ZM-PTZ3.6B
ZM-PTZ3.9B
ZM-PTZ4.3B
ZM-PTZ4.7B
ZM-PTZ5.1B
ZM-PTZ5.6B
ZM-PTZ6.2B
ZM-PTZ6.8B
ZM-PTZ7.5B
ZM-PTZ8.2B
ZM-PTZ9.1B
ZM-PTZ10B
ZM-PTZ11B
ZM-PTZ12B
ZM-PTZ13B
ZM-PTZ15B
ZM-PTZ16B
ZM-PTZ18B
ZM-PTZ20B
ZM-PTZ22B
ZM-PTZ24B
ZM-PTZ27B
ZM-PTZ30B
ZM-PTZ33B
ZM-PTZ36B
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13.3
14.7
16.2
18
4
4.4
4.8
5.2
5.7
6.3
7
7.7
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
15
15
15
10
8
8
6
6
4
4
6
6
8
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
8.4
9.3
10.2
11.2
12.3
13.5
15
16.5
18.3
20.3
22.4
24.5
27.6
30.8
34
6
7
8
9
8
10
10
12
12
14
14
16
16
18
18
20
10
11
12
13
15
17
19
21
23
25
27
20
22
24
27
30
33
36
37
40
1) The Zener voltage is measured 40ms after power is supplied.
2) The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated
current (Iz).
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
Derating curve
Rise in surface temperature
Rise in surface temperature
1200
200
200
100
0
ALUMINA SUBSTRATE
114X124X1.6(mm)
Glass epoxy substrate
32x30x1.6(mm)
1.5W
1W
1.5W
1W
Ceramic substrate
800
82x30x1.0(mm)
100
0.5W
400
Individual part
(not mounted)
0.5W
10
GLASS EPOXY SUBSTRATE
144X220X1.6(mm)
0
0
50
87.5 100
150
200
1
100
1
10
100
Mounting quantity(pcs/substrate)
Mounting quantity(pcs/substrate)
Ta ( C)
Zener voltage characteristics
Zener voltage - temp.
coefficient characteristics
100m
10m
0.10
0.08
10
8.2 9.1
6.8 7.5
6.2
5.6
4.7
5.1
4.3
3.9
3.6
16
12
15
20
11
30
Iz=20mA
Iz=40mA
27
36
24
18
22
33
13
0.04
0
1m
100
10
-0.04
-0.08
125-25
C
1
0
0
5
10
20
30
40
10
20
30
40
35
25
15
Zener voltage (V)
Zener voltage (V)
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
相关型号：
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