D10SB10 [SENO]
10A GLASS PASSIVATED BRIDGE RECTIFIER;
| 型号： | D10SB10 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 10A GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
D10SB05-D10SB100
10A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 170A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
3S
Dim
A
B
C
D
E
Min
Max
25.20
15.30
24.80
14.70
P
N
A
K
4.00 Nominal
H
17.20
0.90
7.30
17.80
1.10
7.70
·
Lead Free Finish/RoHS Complian
C
B
D
L
G
H
J
_
3.10 Æ 3.40 Æ
Mechanical Data
M
3.30
1.50
9.30
2.50
3.40
4.40
0.60
3.70
1.90
9.70
2.90
3.80
4.80
0.80
J
·
·
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
E
K
L
R
M
N
P
·
·
·
·
·
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx.)
Marking: Type Number
G
R
All Dimensions in mm
Lead Free: For RoHS / Lead Free Version
·
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
D10SB D10SB D10SB D10SB D10SB D10SB D10SB
Characteristic
Symbol
Unit
05
50
35
10
100
70
20
200
140
40
60
600
420
80
800
560
100
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
400
1000
700
V
VR(RMS)
IO
RMS Reverse Voltage
280
10
V
A
Average Forward Rectified Output Current
@ TC= 110°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
170
A
Forward Voltage per element
@ IF = 5.0A
VFM
IR
0.98
V
2.0
500
Peak Reverse Current
at Rated DC Blocking Voltage
@TC 25°C
=
mA
@ TC = 125°C
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
Cj
120
55
A2s
pF
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
RqJC
Tj, TSTG
1.4
°C/W
°C
-55 to +150
Notes:
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
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D10SB05-D10SB100
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Zibo Seno Electronic Engineering Co., Ltd.
D10SB05-D10SB100
12
10
10
8
with heatsink
TJ = 25°C
1.0
0.1
6
4
2
without heatsink
Resistive or
Inductive load
Pulse width = 300µs
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
160
100
Tj = 25°C
f = 1MHz
Single half-sine-wave
(JEDEC method)
TJ = 150°C
120
80
10
40
0
1
1
100
10
NUMBER OF CYCLES AT 60 Hz
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 3 Maximum Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
1000
TJ = 150°C
TJ = 125°C
100
TJ = 100°C
10
1.0
TJ = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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D10SB05-D10SB100
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