D20SB100 [SENO]
20A GLASS PASSIVATED BRIDGE RECTIFIER;
| 型号： | D20SB100 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 20A GLASS PASSIVATED BRIDGE RECTIFIER 二极管 |
| 文件： | 总2页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
D20SB05-D20SB100
20A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 240A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
5S
Dim
A
B
C
D
E
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
Max
30.30
20.30
18.00
4.20
L
A
M
K
7.70
·
Lead Free Finish/RoHS Complian
G
H
I
10.20
2.40
B
D
S
N
_
Mechanical Data
1.10
J
P
J
2.70
·
·
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
H
I
C
K
L
3.0 X 45°
R
4.40
3.40
3.10
2.50
0.60
10.80
4.80
3.80
3.40
2.90
0.80
11.20
·
·
·
·
·
·
Polarity: Molded on Body
M
N
P
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
G
E
E
R
S
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
D20SB D20SB D20SB D20SB D20SB D20SB D20SB
Characteristic
Symbol
Unit
05
50
35
10
100
70
20
40
60
80
100
1000
700
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
200
140
400
600
420
800
560
V
VR(RMS)
RMS Reverse Voltage
280
20
V
A
Average Forward Rectified Output Current @ TC = 110°C
IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
VFM
IR
240
A
V
Forward Voltage per element
@ IF = 10A
0.98
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA = 25°C
@ TC = 125°C
2.0
500
µA
I2t Rating for Fusing (t < 8.3 ms) (Note 1)
I2t
CT
240
60
A2s
pF
Typical Total Capacitance per Element (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
RqJC
Tj, TSTG
0.8
°C/W
°C
-55 to +150
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
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D20SB05-D20SB100
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Zibo Seno Electronic Engineering Co., Ltd.
D20SB05-D20SB100
25
20
100
With heatsink
10
15
10
5
1.0
Without heatsink
0.1
Tj = 25°C
Resistive or
Inductive load
0
25
75
50
100
125
150
0.01
100
0
0.4
0.8
1.2
1.6
2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
250
Tj = 25°C
f = 1MHz
Tj = 25°C
Single half-sine-wave
200
150
100
10
50
0
1
1
100
10
NUMBER OF CYCLES AT 60 Hz
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance, Per Element
Fig. 3 Maximum Non-Repetitive Surge Current
1000
Tj = 125°C
Tj = 100°C
100
10
Tj = 50°C
Tj = 25°C
1.0
0.1
20
40
80
100
0
60
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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D20SB05-D20SB100
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