D25SB100 [SENO]
25A GLASS PASSIVATED BRIDGE RECTIFIER;
| 型号： | D25SB100 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 25A GLASS PASSIVATED BRIDGE RECTIFIER 二极管 |
| 文件： | 总2页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
D25SB05-D25SB100
25A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 240A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
5S
Dim
A
B
C
D
E
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
Max
30.30
20.30
18.00
4.20
L
A
M
K
·
Lead Free Finish/RoHS Complian
7.70
B
D
G
H
I
10.20
2.40
S
N
_
Mechanical Data
J
1.10
P
J
2.70
·
·
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
H
I
C
K
L
3.0 X 45°
R
4.40
3.40
3.10
2.50
0.60
10.80
4.80
3.80
3.40
2.90
0.80
11.20
·
·
·
·
·
·
Polarity: Molded on Body
M
N
P
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
G
E
E
R
S
All Dimensions in mm
Maximum Ratings and Electrical Characteristics@ T = 25°C unless otherwise specified
A
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
D25SB D25SB D25SB D25SB D25SB D25SB D25SB
Characteristic
Symbol
Unit
05
50
35
10
100
70
20
200
140
20
60
80
100
1000
700
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
400
600
420
800
560
V
VR(RMS)
IO
RMS Reverse Voltage
280
25
V
A
Average Forward Rectified Output Current
(Note 1)
@ TC = 100°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
350
A
Forward Voltage (per element)
@ IF = 12.5A
VFM
IR
0.98
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 125°C
2.0
500
µA
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
Cj
510
85
A2s
pF
Typical Junction Capacitance (per element) (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
RqJC
Tj, TSTG
0.6
°C/W
°C
-55 to +150
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
D25SB05-D25SB100
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Zibo Seno Electronic Engineering Co., Ltd.
D25SB05-D25SB100
30
100
Tj = 25°C
with heatsink
25
20
10
15
1.0
10
5
0.1
without heatsink
Resistive or
Inductive load
0
Pulse width = 300µs
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1000
100
Single half-sine-wave
(JEDEC method)
TJ = 25°C
f = 1MHz
400
Tj = 25°C
300
200
10
100
0
1
1
100
10
NUMBER OF CYCLES AT 60 Hz
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 3 Maximum Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
1000
Tj = 150°C
Tj = 125°C
100
Tj = 100°C
10
1.0
Tj = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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