EABS21 [SENO]
SUPER FAST SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER;
| 型号： | EABS21 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | SUPER FAST SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
EABS21 – EABS26
2.0A SUPER FAST SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Flammability 94V-O
G
!
!
!
!
!
-
+
~
H
B
~
D
E
C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
A
ABS
Min
4.80
4.20
0.15
—
6.00
0.30
0.90
L
Dim
A
Max
5.30
4.60
0.25
0.20
6.80
0.70
1.10
Mechanical Data
J
B
!
!
Case: SOPA-4, ABS, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
C
D
K
E
!
!
!
!
Polarity: As Marked on Case
Mounting Position: Any
Marking: Type Number
G
H
J
—
3.80
1.22
1.50
4.20
1.72
Lead Free: For RoHS / Lead Free Version
K
L
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
EABS1
EABS2
EABS4
EABS6
Uni
Symbol
Characteristic
t
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
70
200
140
400
280
600
560
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current (Note 1) @TA = 40°C
Average Rectified Output Current (Note 2) @TA = 40°C
2.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
60
A
I2t Rating for Fusing (t < 8.3ms)
I2t
5.0
A2s
V
Forward Voltage per element
@IF = 2.0A
VFM
IRM
0.95
1.25
1.7
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
5.0
500
µA
Reverse Recovery Time (Note 4)
35
nS
trr
Typical Junction Capacitance per leg (Note 3)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
Cj
13
pF
JA
Rꢀ
62.5
25
°C/W
°C
RꢀJL
T
j, TSTG
-55 to +150
Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
4. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
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EABS21 - EABS26
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Alldatasheet
Zibo Seno Electronic Engineering Co., Ltd.
EABS21 – EABS26
3.0
2.0
1.5
1.0
0.5
0
Tj = 25°C
Pulse width = 300µs
10
1.0
0.1
Single phase half-wave
60 Hz resistive or inductive load
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150 175
200
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TA, AMBIENT TEMPERATURE ( C)
Fig. 1 Forward Derating Curve
60
50
100
Tj = 25 C
f = 1MHz
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
40
30
10
20
10
1
0
1
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
5 Reverse Recovery Time Characteristic and Test Circuit
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EABS21 - EABS26
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Alldatasheet
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